Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime.
Nanotechnology
; 27(45): 455706, 2016 Nov 11.
Article
en En
| MEDLINE
| ID: mdl-27713184
Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trapping at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewalls. The interplay of these effects leads to a complex temporal evolution of the quenching, which strongly depends on the incident electron dose per area. Time-resolved photoluminescence measurements on electron-irradiated samples reveal that the carbonaceous adlayer affects both the nonradiative and the radiative recombination dynamics.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Año:
2016
Tipo del documento:
Article