Origin of in Situ Domain Formation of Heavily Nb-Doped Pb(Zr,Ti)O<sub>3</sub> Thin Films Sputtered on Ir/TiW/SiO<sub>2</sub>/Si Substrates for Mobile Sensor Applications.

Han, Chan Su; Park, Kyu Sik; Choi, Hong Je; Cho, Yong Soo

Origin of in Situ Domain Formation of Heavily Nb-Doped Pb(Zr,Ti)O₃ Thin Films Sputtered on Ir/TiW/SiO₂/Si Substrates for Mobile Sensor Applications.

Han, Chan Su; Park, Kyu Sik; Choi, Hong Je; Cho, Yong Soo.

Afiliación

Han CS; Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Korea.
Park KS; Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Korea.
Choi HJ; Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Korea.
Cho YS; Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Korea.

ACS Appl Mater Interfaces ; 9(22): 18904-18910, 2017 Jun 07.

Article en En | MEDLINE | ID: mdl-28497695

Palabras clave

Nb-doping; Pb(Zr,Ti)O3; imprint; piezoelectric; sputtering

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2017 Tipo del documento: Article

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