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Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.
Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; Shi, Wu; Lee, Kyunghoon; Wu, Shuang; Yong Choi, Byung; Braganza, Rohit; Lear, Jordan; Kau, Nicholas; Choi, Wonwoo; Chen, Chen; Pedramrazi, Zahra; Dumslaff, Tim; Narita, Akimitsu; Feng, Xinliang; Müllen, Klaus; Fischer, Felix; Zettl, Alex; Ruffieux, Pascal; Yablonovitch, Eli; Crommie, Michael; Fasel, Roman; Bokor, Jeffrey.
Afiliación
  • Llinas JP; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Fairbrother A; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Borin Barin G; Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland.
  • Shi W; Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland.
  • Lee K; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Wu S; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
  • Yong Choi B; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Braganza R; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Lear J; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Kau N; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Choi W; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Chen C; Flash PA Team, Semiconductor Memory Business, Samsung Electronics Co. Ltd., Gyeonggi-do, Korea.
  • Pedramrazi Z; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Dumslaff T; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Narita A; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Feng X; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
  • Müllen K; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
  • Fischer F; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
  • Zettl A; Department of Physics, UC Berkeley, Berkeley, CA, 94720, USA.
  • Ruffieux P; Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz, 55128, Germany.
  • Yablonovitch E; Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz, 55128, Germany.
  • Crommie M; Center for Advancing Electronics Dresden, Department of Chemistry and Food Chemistry, TU Dresden, Mommsenstrasse 4, Dresden, 01062, Germany.
  • Fasel R; Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz, 55128, Germany.
  • Bokor J; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Nat Commun ; 8(1): 633, 2017 09 21.
Article en En | MEDLINE | ID: mdl-28935943
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2017 Tipo del documento: Article País de afiliación: Estados Unidos
Texto completo
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PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2017 Tipo del documento: Article País de afiliación: Estados Unidos