Layer-Dependent Electronic Structure of Atomically Resolved Two-Dimensional Gallium Selenide Telluride.
Nano Lett
; 19(3): 1782-1787, 2019 03 13.
Article
en En
| MEDLINE
| ID: mdl-30746949
ABSTRACT
Alloying two-dimensional (2D) semiconductors provides a powerful method to tune their physical properties, especially those relevant to optoelectronic applications. However, as the crystal structure becomes more complex, it becomes increasingly difficult to accurately correlate response characteristics to detailed atomic structure. We investigate, via annular dark-field scanning transmission electron microscopy, electron energy loss spectroscopy, and second harmonic generation, the layered III-VI alloy GaSe0.5Te0.5 as a function of layer number. The local atomic structure and stacking sequence for different layers is explicitly determined. We complement the measurements with first-principles calculations of the total energy and electronic band structure of GaSe0.5Te0.5 for different crystal structures and layer number. The electronic band gap as well as the π and π + σ plasmons are found to be sensitive to layer number.
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1
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Año:
2019
Tipo del documento:
Article
País de afiliación:
Estados Unidos