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Enhanced photoresponse of epitaxially grown ZnO by MoO3 surface functionalization.
Yang, XiangDong; Wang, HaiTao; Dou, WeiDong; Wang, Peng; Yang, XuXin; Pan, XinHua; Lu, Bin; Mao, HongYing.
Afiliación
  • Yang X; Department of Physics, Hangzhou Normal University, Hangzhou 311121, China.
  • Wang H; Department of Physics, Hangzhou Normal University, Hangzhou 311121, China.
  • Dou W; Laboratory of Low-Dimensional Carbon Materials, Physics Department, Shaoxing University, Shaoxing, 312000, China. phymaohy@hznu.edu.cn.
  • Wang P; Department of Applied Physics, College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao, 266590, China.
  • Yang X; Department of Physics, Hangzhou Normal University, Hangzhou 311121, China.
  • Pan X; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China. binlu@zju.edu.cn.
  • Lu B; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China. binlu@zju.edu.cn.
  • Mao H; Department of Physics, Hangzhou Normal University, Hangzhou 311121, China.
Phys Chem Chem Phys ; 22(4): 2399-2404, 2020 Jan 28.
Article en En | MEDLINE | ID: mdl-31938793
ZnO has broad applications in optoelectronic devices, including ultraviolet light emitters and photodetectors. Herein we report the impact of MoO3 surface functionalization on the photoresponse of epitaxially grown ZnO. Under illumination with 350 nm UV light, the photocurrent of ZnO is found to be enhanced by 2.87 times after the deposition of 0.2 nm MoO3. As corroborated by in situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy results, the enhanced photoresponse derives from MoO3 related gap states within the band gap of ZnO and larger upward band bending at the interface, which is attributed to the strong electron transfer from ZnO to MoO3. Moreover, photoluminescence results reveal that the recombination probability of the photo-generated charge carriers in ZnO is reduced after MoO3 surface functionalization.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2020 Tipo del documento: Article País de afiliación: China
Texto completo
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XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2020 Tipo del documento: Article País de afiliación: China