Ion tracks in silicon formed by much lower energy deposition than the track formation threshold.

Amekura, H; Toulemonde, M; Narumi, K; Li, R; Chiba, A; Hirano, Y; Yamada, K; Yamamoto, S; Ishikawa, N; Okubo, N; Saitoh, Y

Amekura, H; Toulemonde, M; Narumi, K; Li, R; Chiba, A; Hirano, Y; Yamada, K; Yamamoto, S; Ishikawa, N; Okubo, N; Saitoh, Y.

Afiliación

Amekura H; National Institute for Materials Science (NIMS), Tsukuba, Japan. amekura.hiroshi@nims.go.jp.
Toulemonde M; CIMAP, Caen, France.
Narumi K; National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan.
Li R; National Institute for Materials Science (NIMS), Tsukuba, Japan.
Chiba A; Shandong University, Jinan, China.
Hirano Y; National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan.
Yamada K; National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan.
Yamamoto S; National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan.
Ishikawa N; National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan.
Okubo N; Japan Atomic Energy Agency, Tokai, Japan.
Saitoh Y; Japan Atomic Energy Agency, Tokai, Japan.

Sci Rep ; 11(1): 185, 2021 Jan 08.

Article en En | MEDLINE | ID: mdl-33420182

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2021 Tipo del documento: Article País de afiliación: Japón

Texto completo

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2021 Tipo del documento: Article País de afiliación: Japón