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A New Approach for the Control and Reduction of Warpage and Residual Stresses in Bonded Wafer.
Farshchi Yazdi, Seyed Amir Fouad; Garavaglia, Matteo; Ghisi, Aldo; Corigliano, Alberto.
Afiliación
  • Farshchi Yazdi SAF; Department of Civil and Environmental Engineering, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy.
  • Garavaglia M; STMicroelectronics, Via Camillo Olivetti 2, 20864 Agrate Brianza, Italy.
  • Ghisi A; Department of Civil and Environmental Engineering, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy.
  • Corigliano A; Department of Civil and Environmental Engineering, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy.
Micromachines (Basel) ; 12(4)2021 Mar 26.
Article en En | MEDLINE | ID: mdl-33810581
A geometrical modification on silicon wafers before the bonding process, aimed to decrease (1) the residual stress caused by glass frit bonding, is proposed. Finite element modeling showed that (2) by introducing this modification, the wafer out-of-plane deflection was decreased by 34%. Moreover, (3) fabricated wafers with the proposed geometrical feature demonstrated an improvement for the (4) warpage with respect to the plain wafers. A benefit for curvature variation and overall shape of the (5) bonded wafers was also observed.
Palabras clave

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2021 Tipo del documento: Article País de afiliación: Italia

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2021 Tipo del documento: Article País de afiliación: Italia