Low Barrier for Exciton Self-Trapping Enables High Photoluminescence Quantum Yield in Cs3Cu2I5.

Jung, Young-Kwang; Kim, Sunghyun; Kim, Yong Churl; Walsh, Aron

Low Barrier for Exciton Self-Trapping Enables High Photoluminescence Quantum Yield in Cs₃Cu₂I₅.

Jung, Young-Kwang; Kim, Sunghyun; Kim, Yong Churl; Walsh, Aron.

Afiliación

Jung YK; Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
Kim S; Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
Kim YC; Department of Materials, Imperial College London, London SW7 2AZ, U.K.
Walsh A; Samsung Electronics Materials Research Complex, Samsung Advanced Institute of Technology (SAIT), Suwon 443-803, Korea.

J Phys Chem Lett ; 12(34): 8447-8452, 2021 Sep 02.

Article en En | MEDLINE | ID: mdl-34437809

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2021 Tipo del documento: Article

Texto completo

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2021 Tipo del documento: Article