Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications.
ACS Appl Mater Interfaces
; 13(38): 45843-45853, 2021 Sep 29.
Article
en En
| MEDLINE
| ID: mdl-34542262
ABSTRACT
Recently, atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) have attracted great interest in electronic and opto-electronic devices for high-integration-density applications such as data storage due to their small vertical dimension and high data storage capability. Here, we report a memristor based on free-standing multilayer molybdenum disulfide (MoS2) with a high current on/off ratio of â¼103 and a stable retention for at least 3000 s. Through light modulation of the carrier density in the suspended MoS2 channel, the on/off ratio can be further increased to â¼105. Moreover, the essential photosynaptic functions with short- and long-term memory (STM and LTM) behaviors are successfully mimicked by such devices. These results also indicate that STM can be transferred to LTM by increasing the light stimuli power, pulse duration, and number of pulses. The electrical measurements performed under vacuum and ambient air conditions propose that the observed resistive switching is due to adsorbed oxygen and water molecules on both sides of the MoS2 channel. Thus, our free-standing 2D multilayer MoS2-based memristors propose a simple approach for fabrication of a low-power-consumption and reliable resistive switching device for neuromorphic applications.
Texto completo:
1
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Asunto de la revista:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Año:
2021
Tipo del documento:
Article
País de afiliación:
Canadá