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Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals.
Yang, Seong-Jun; Jung, Ju-Hyun; Lee, Eunsook; Han, Edmund; Choi, Min-Yeong; Jung, Daesung; Choi, Shinyoung; Park, Jun-Ho; Oh, Dongseok; Noh, Siwoo; Kim, Ki-Jeong; Huang, Pinshane Y; Hwang, Chan-Cuk; Kim, Cheol-Joo.
Afiliación
  • Yang SJ; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea.
  • Jung JH; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea.
  • Lee E; Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea.
  • Han E; Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
  • Choi MY; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea.
  • Jung D; Convergence Research Center for Energy and Environmental Sciences, Sungkyunkwan University, Suwon, Gyeonggi 16419, Republic of Korea.
  • Choi S; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea.
  • Park JH; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea.
  • Oh D; Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea.
  • Noh S; Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea.
  • Kim KJ; Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea.
  • Huang PY; Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
  • Hwang CC; Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea.
  • Kim CJ; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea.
Nano Lett ; 22(4): 1518-1524, 2022 Feb 23.
Article en En | MEDLINE | ID: mdl-35119873
ABSTRACT
Crystalline films offer various physical properties based on the modulation of their thicknesses and atomic structures. The layer-by-layer assembly of atomically thin crystals provides a powerful means to arbitrarily design films at the atomic level, which are unattainable with existing growth technologies. However, atomically clean assembly of the materials with high scalability and reproducibility remains challenging. We report programmed crystal assembly of graphene and monolayer hexagonal boron nitride, assisted by van der Waals interactions, to form wafer-scale films of pristine interfaces with near-unity yield. The atomic configurations of the films are tailored with layer-resolved compositions and in-plane crystalline orientations. We demonstrate batch-fabricated tunnel device arrays with modulation of the resistance over orders of magnitude by thickness control of the hexagonal boron nitride barrier with single-atom precision and large-scale, twisted multilayer graphene with programmable electronic band structures and crystal symmetries. Our results constitute an important development in the artificial design of large-scale films.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article