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An assessment on crystallization phenomena of Si in Al/a-Si thin films via thermal annealing and ion irradiation.
Maity, G; Dubey, S; El-Azab, Anter; Singhal, R; Ojha, S; Kulriya, P K; Dhar, S; Som, T; Kanjilal, D; Patel, Shiv P.
Afiliación
  • Maity G; Department of Pure & Applied Physics, Guru Ghasidas Vishwavidyalaya (A Central University) Bilaspur-495009 India shivpoojanbhola@gmail.com.
  • Dubey S; Department of Physics, School of Engineering, University of Petroleum & Energy Studies Bidholi Dehradun-248007 India.
  • El-Azab A; Material Science & Engineering, Purdue University West Lafayette IN-47906 USA.
  • Singhal R; Department of Physics, Malaviya National Institute of Technology Jaipur-302017 India.
  • Ojha S; Inter University Accelerator Centre Aruna Asaf Ali Marg New Delhi-110067 India.
  • Kulriya PK; Inter University Accelerator Centre Aruna Asaf Ali Marg New Delhi-110067 India.
  • Dhar S; Department of Physics, Shiv Nadar University Gautam Buddha Nagar-201314 India.
  • Som T; Institute of Physics Sachivalaya Marg Bhubaneswar-751005 India.
  • Kanjilal D; Inter University Accelerator Centre Aruna Asaf Ali Marg New Delhi-110067 India.
  • Patel SP; Department of Pure & Applied Physics, Guru Ghasidas Vishwavidyalaya (A Central University) Bilaspur-495009 India shivpoojanbhola@gmail.com.
RSC Adv ; 10(8): 4414-4426, 2020 Jan 24.
Article en En | MEDLINE | ID: mdl-35495262

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: RSC Adv Año: 2020 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: RSC Adv Año: 2020 Tipo del documento: Article