Nonequilibrium Phonon Thermal Resistance at MoS<sub>2</sub>/Oxide and Graphene/Oxide Interfaces.

Zheng, Weidong; McClellan, Connor J; Pop, Eric; Koh, Yee Kan

Nonequilibrium Phonon Thermal Resistance at MoS₂/Oxide and Graphene/Oxide Interfaces.

Zheng, Weidong; McClellan, Connor J; Pop, Eric; Koh, Yee Kan.

Afiliación

Zheng W; Department of Mechanical Engineering, National University of Singapore, Queenstown 117576, Singapore.
McClellan CJ; Centre for Advanced 2D Materials, National University of Singapore, Queenstown 117542, Singapore.
Pop E; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
Koh YK; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.

ACS Appl Mater Interfaces ; 14(19): 22372-22380, 2022 May 18.

Article en En | MEDLINE | ID: mdl-35506655

Palabras clave

2D material devices; interfaces of 2D materials; internal thermal resistance; nonequilibrium phonons; thermal boundary resistance; thermal management

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: Singapur

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