Nanoporous GaN onp-type GaN: a Mg out-diffusion compensation layer for heavily Mg-dopedp-type GaN.
Nanotechnology
; 33(50)2022 Oct 04.
Article
en En
| MEDLINE
| ID: mdl-36103775
ABSTRACT
Embeddingp-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent epitaxial layers is a key for designing various multi-junction structures with high precision and enabling more reliable bandgap engineering of III-nitride-based optoelectronics and electronics. Here, we report, for the first time, experimental evidence of how nanoporous GaN (NP GaN) can be introduced as a compensation layer for the Mg out-diffusion fromp-GaN. NP GaN onp-GaN provides anex-situformed interface with oxygen and carbon impurities, compensating for Mg out-diffusion fromp-GaN. To corroborate our findings, we used two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN as the indicator to study the impact of the Mg out-diffusion from underlying layers. Electron concentration evaluated from the capacitance-voltage measurement shows that 9 × 1012cm-2of carriers accumulate in the AlGaN/GaN 2DEG structure grown on NP GaN, which is the almost same number of carriers as that grown with nop-GaN. In contrast, 2DEG onp-GaN without NP GaN presents 9 × 109cm-2of the electron concentration, implying the 2DEG structure is depleted by Mg out-diffusion. The results address the efficacy of NP GaN and its' role in successfully embeddingp-GaN in multi-junction structures for various state-of-the-art III-nitride-based devices.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Año:
2022
Tipo del documento:
Article
País de afiliación:
Estados Unidos