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Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices.
Lee, Yunseok; Jang, Jiung; Jeon, Beomki; Lee, Kisong; Chung, Daewon; Kim, Sungjun.
Afiliación
  • Lee Y; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
  • Jang J; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
  • Jeon B; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
  • Lee K; Department of Information and Communication Engineering, Dongguk University, Seoul 04620, Korea.
  • Chung D; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
  • Kim S; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
Materials (Basel) ; 15(21)2022 Oct 26.
Article en En | MEDLINE | ID: mdl-36363111
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2022 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2022 Tipo del documento: Article