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Direct Observation of the Topological Surface State in the Topological Superconductor 2M-WS2.
Cho, Soohyun; Huh, Soonsang; Fang, Yuqiang; Hua, Chenqiang; Bai, Hua; Jiang, Zhicheng; Liu, Zhengtai; Liu, Jishan; Chen, Zhenhua; Fukushima, Yuto; Harasawa, Ayumi; Kawaguchi, Kaishu; Shin, Shik; Kondo, Takeshi; Lu, Yunhao; Mu, Gang; Huang, Fuqiang; Shen, Dawei.
Afiliación
  • Cho S; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, People's Republic of China.
  • Huh S; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China.
  • Fang Y; Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan.
  • Hua C; State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai200050, People's Republic of China.
  • Bai H; State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing100871, People's Republic of China.
  • Jiang Z; Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou310027, People's Republic of China.
  • Liu Z; Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou310027, People's Republic of China.
  • Liu J; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, People's Republic of China.
  • Chen Z; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, People's Republic of China.
  • Fukushima Y; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China.
  • Harasawa A; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, People's Republic of China.
  • Kawaguchi K; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China.
  • Shin S; Shanghai Synchrotron Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai201204, People's Republic of China.
  • Kondo T; Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan.
  • Lu Y; Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan.
  • Mu G; Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan.
  • Huang F; Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba277-8581, Japan.
  • Shen D; Trans-Scale Quantum Science Institute, The University of Tokyo, Bunkyo-ku, Tokyo113-0033, Japan.
Nano Lett ; 22(22): 8827-8834, 2022 Nov 23.
Article en En | MEDLINE | ID: mdl-36367457
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article