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All-Water Etching-Free Electron Beam Lithography for On-Chip Nanomaterials.
Wang, Xiaohan; Dai, Xiao; Wang, Hao; Wang, Jiong; Chen, Qi; Chen, Fengnan; Yi, Qinghua; Tang, Rujun; Gao, Liang; Ma, Liang; Wang, Chen; Wang, Xiangyi; He, Guanglong; Fei, Yue; Guan, Yanqiu; Zhang, Biao; Dai, Yue; Tu, Xuecou; Zhang, Lijian; Zhang, Labao; Zou, Guifu.
Afiliación
  • Wang X; School of Energy, School of Physical Science and Technology, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China.
  • Dai X; Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
  • Wang H; School of Energy, School of Physical Science and Technology, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China.
  • Wang J; School of Optical and Electronic Information, Suzhou City University, Suzhou 215104, China.
  • Chen Q; Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
  • Chen F; School of Energy, School of Physical Science and Technology, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China.
  • Yi Q; Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
  • Tang R; School of Energy, School of Physical Science and Technology, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China.
  • Gao L; School of Energy, School of Physical Science and Technology, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China.
  • Ma L; School of Energy, School of Physical Science and Technology, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China.
  • Wang C; School of Energy, School of Physical Science and Technology, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China.
  • Wang X; School of Energy, School of Physical Science and Technology, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China.
  • He G; Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
  • Fei Y; School of Energy, School of Physical Science and Technology, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China.
  • Guan Y; School of Energy, School of Physical Science and Technology, School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China.
  • Zhang B; Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
  • Dai Y; Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
  • Tu X; Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
  • Zhang L; Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
  • Zhang L; Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
  • Zou G; Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
ACS Nano ; 17(5): 4933-4941, 2023 Mar 14.
Article en En | MEDLINE | ID: mdl-36802505

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2023 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2023 Tipo del documento: Article País de afiliación: China