Modifying the Power and Performance of 2-Dimensional MoS<sub>2</sub> Field Effect Transistors.

Zhuo, Fulin; Wu, Jie; Li, Binhong; Li, Moyang; Tan, Chee Leong; Luo, Zhongzhong; Sun, Huabin; Xu, Yong; Yu, Zhihao

Modifying the Power and Performance of 2-Dimensional MoS₂ Field Effect Transistors.

Zhuo, Fulin; Wu, Jie; Li, Binhong; Li, Moyang; Tan, Chee Leong; Luo, Zhongzhong; Sun, Huabin; Xu, Yong; Yu, Zhihao.

Afiliación

Zhuo F; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Wu J; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Li B; Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Li M; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Tan CL; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Luo Z; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Sun H; College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Xu Y; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Yu Z; Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.

Research (Wash D C) ; 6: 0057, 2023.

Article en En | MEDLINE | ID: mdl-36939429

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Research (Wash D C) Año: 2023 Tipo del documento: Article País de afiliación: China

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