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Revealing the key role of molecular packing on interface spin polarization at two-dimensional limit in spintronic devices.
Luo, Zhongzhong; Song, Xiangxiang; Liu, Xiaolong; Lu, Xiangqian; Yao, Yu; Zeng, Junpeng; Li, Yating; He, Daowei; Zhao, Huijuan; Gao, Li; Yu, Zhihao; Niu, Wei; Sun, Huabin; Xu, Yong; Liu, Shujuan; Qin, Wei; Zhao, Qiang.
Afiliación
  • Luo Z; College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Song X; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Liu X; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Lu X; Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China.
  • Yao Y; School of New Energy, North China Electric Power University, Beijing 102206, China.
  • Zeng J; School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
  • Li Y; Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • He D; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Zhao H; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Gao L; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Yu Z; Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Niu W; Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Sun H; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Xu Y; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Liu S; New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Qin W; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Zhao Q; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Sci Adv ; 9(14): eade9126, 2023 Apr 05.
Article en En | MEDLINE | ID: mdl-37018394
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Adv Año: 2023 Tipo del documento: Article País de afiliación: China
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Adv Año: 2023 Tipo del documento: Article País de afiliación: China