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Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure.
Zhong, Zhipeng; Wu, Shuaiqin; Li, Xiang; Wang, Zhiqiang; Yang, Qianyi; Huang, Bangchi; Chen, Yan; Wang, Xudong; Lin, Tie; Shen, Hong; Meng, Xiangjian; Wang, Ming; Shi, Wu; Wang, Jianlu; Chu, Junhao; Huang, Hai.
Afiliación
  • Zhong Z; Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China.
  • Wu S; Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China.
  • Li X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
  • Wang Z; Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China.
  • Yang Q; Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China.
  • Huang B; Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China.
  • Chen Y; Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China.
  • Wang X; Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China.
  • Lin T; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
  • Shen H; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
  • Meng X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
  • Wang M; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
  • Shi W; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
  • Wang J; Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China.
  • Chu J; State Key Laboratory of Integrated Chip and Systems, Fudan University, Shanghai 200433, People's Republic of China.
  • Huang H; State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China.
ACS Nano ; 17(13): 12563-12572, 2023 Jul 11.
Article en En | MEDLINE | ID: mdl-37186552
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2023 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2023 Tipo del documento: Article