Tunable non-volatile memories based on 2D InSe/h-BN/GaSe heterostructures towards potential multifunctionality.
Nanoscale
; 15(35): 14448-14457, 2023 Sep 14.
Article
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| MEDLINE
| ID: mdl-37615579
ABSTRACT
Floating-gate memories based on two-dimensional van der Waal (2D vdW) heterostructures play an important role in the development of next-generation information technology. The diversity of 2D vdW materials and their heterostructures provides flexibility in the design of novel storage architectures. However, 2D InSe/h-BN/GaSe heterostructures are rarely reported in the field of tunable non-volatile memories, probably due to the quality limitation of materials and complex interfaces from stackings. Herein, a floating-gate 2D InSe/h-BN/GaSe memory with high performance and atmosphere stability is demonstrated. It exhibits both a large ON/OFF current ratio of â¼105 and a good extinction ratio of â¼103, with an estimated maximum storage capacity of 5.1 × 1012 cm-2. Moreover, the storage performance can be regulated by optimizing the thickness of the insulating h-BN layer. Different device configurations have been explored to validate the working mechanism. Furthermore, a simulation of biological synaptic behavior is achieved on the same prototype device. The enhanced non-volatile characteristics enable the exploration of the integrated 2D memory and potential multifunctionality.
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01-internacional
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MEDLINE
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En
Revista:
Nanoscale
Año:
2023
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Article