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Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD.
Parkhomenko, Irina; Vlasukova, Liudmila; Komarov, Fadei; Kovalchuk, Nataliya; Demidovich, Sergey; Zhussupbekova, Ainur; Zhussupbekov, Kuanysh; Shvets, Igor V; Milchanin, Oleg; Zhigulin, Dmitry; Romanov, Ivan.
Afiliación
  • Parkhomenko I; Belarusian State University, Kurchatov Str. 5, 220045 Minsk, Belarus.
  • Vlasukova L; Belarusian State University, Kurchatov Str. 5, 220045 Minsk, Belarus.
  • Komarov F; A.N. Sevchenko Institute of Applied Physical Problems of Belarusian State University, Kurchatov Str. 7, 220045 Minsk, Belarus.
  • Kovalchuk N; Joint Stock Company "Integral", Kazintsa Str. 121 A, 220108 Minsk, Belarus.
  • Demidovich S; Joint Stock Company "Integral", Kazintsa Str. 121 A, 220108 Minsk, Belarus.
  • Zhussupbekova A; School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin D02 PN40, Ireland.
  • Zhussupbekov K; L.N. Gumilyov Eurasian National University, 2 Satpayev Street, Astana 010000, Kazakhstan.
  • Shvets IV; School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin D02 PN40, Ireland.
  • Milchanin O; School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin D02 PN40, Ireland.
  • Zhigulin D; A.N. Sevchenko Institute of Applied Physical Problems of Belarusian State University, Kurchatov Str. 7, 220045 Minsk, Belarus.
  • Romanov I; Joint Stock Company "Integral", Kazintsa Str. 121 A, 220108 Minsk, Belarus.
ACS Omega ; 8(33): 30768-30775, 2023 Aug 22.
Article en En | MEDLINE | ID: mdl-37636914
Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH4/N2 = 1.875 and SiH4/N2O = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH4/N2/N2O = 3:2:2) was not found. Annealing resulted in a thickness decrease and structural transformation for SiOx and SiNx films. Nanocrystalline phases of Si as well as α- and ß-Si3N4 were found in the annealed silicon nitride film. Compared to oxide and nitride films, the oxynitride film is the least susceptible to change during annealing. The relationship between the structure, composition, and optical properties of the Si-based films has been revealed. It has been shown that the calculated optical parameters (refractive index, extinction coefficient) reflect structural peculiarities of the as-deposited and annealed films.

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Omega Año: 2023 Tipo del documento: Article País de afiliación: Belarús

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Omega Año: 2023 Tipo del documento: Article País de afiliación: Belarús