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Observation of Fast Low-Temperature Oxygen Ion Conduction in CeO2/ß"-Al2O3 Heterostructure.
Zhang, Yingbo; Zhu, Decai; Zhao, Zhonglong; Liu, Jiamei; Ouyang, Yuzhao; Yu, Jiangyu; Liu, Zhongqing; Bai, Xixi; Wang, Nan; Zhuang, Lin; Liu, Wuming; Zhu, Chengjun.
Afiliación
  • Zhang Y; Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West Daxue Street, Hohhot, Inner Mongolia, 010021, P. R. China.
  • Zhu D; Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West Daxue Street, Hohhot, Inner Mongolia, 010021, P. R. China.
  • Zhao Z; Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West Daxue Street, Hohhot, Inner Mongolia, 010021, P. R. China.
  • Liu J; Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West Daxue Street, Hohhot, Inner Mongolia, 010021, P. R. China.
  • Ouyang Y; Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West Daxue Street, Hohhot, Inner Mongolia, 010021, P. R. China.
  • Yu J; Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West Daxue Street, Hohhot, Inner Mongolia, 010021, P. R. China.
  • Liu Z; Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West Daxue Street, Hohhot, Inner Mongolia, 010021, P. R. China.
  • Bai X; Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West Daxue Street, Hohhot, Inner Mongolia, 010021, P. R. China.
  • Wang N; Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West Daxue Street, Hohhot, Inner Mongolia, 010021, P. R. China.
  • Zhuang L; State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, P. R. China.
  • Liu W; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
  • Zhu C; Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West Daxue Street, Hohhot, Inner Mongolia, 010021, P. R. China.
Adv Sci (Weinh) ; 11(35): e2401130, 2024 Sep.
Article en En | MEDLINE | ID: mdl-39033538
ABSTRACT
Semiconductor ion fuel cells (SIFCs) have demonstrated impressive ionic conductivity and efficient power generation at temperatures below 600 °C. However, the lack of understanding of the ionic conduction mechanisms associated with composite electrolytes has impeded the advancement of SIFCs toward lower operating temperatures. In this study, a CeO2/ß″-Al2O3 heterostructure electrolyte is introduced, incorporating ß″-Al2O3 and leveraging the local electric field (LEF) as well as the manipulation of the melting point temperature of carbonate/hydroxide (C/H) by Na+ and Mg2+ from ß″-Al2O3. This design successfully maintains swift interfacial conduction of oxygen ions at 350 °C. Consequently, the fuel cell device achieved an exceptional ionic conductivity of 0.019 S/cm and a power output of 85.9 mW/cm2 at 350 °C. The system attained a peak power density of 1 W/cm2 with an ultra-high ionic conductivity of 0.197 S/cm at 550 °C. The results indicate that through engineering the LEF and incorporating the lower melting point C/H, there approach effectively observed oxygen ion transport at low temperatures (350 °C), effectively overcoming the issue of cell failure at temperatures below 419 °C. This study presents a promising methodology for further developing high-performance semiconductor ion fuel cells in the low temperature range of 300-600 °C.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2024 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2024 Tipo del documento: Article