Attojoule Hexagonal Boron Nitride-Based Memristor for High-Performance Neuromorphic Computing.

In next-generation neuromorphic computing applications, the primary challenge lies in achieving energy-efficient and reliable memristors while minimizing their energy consumption to a level comparable to that of biological synapses. In this work, hexagonal boron nitride (h-BN)-based metal-insulator-semiconductor (MIS) memristors operating is presented at the attojoule-level tailored for high-performance artificial neural networks. The memristors benefit from a wafer-scale uniform h-BN resistive switching medium grown directly on a highly doped Si wafer using metal-organic chemical vapor deposition (MOCVD), resulting in outstanding reliability and low variability. Notably, the h-BN-based memristors exhibit exceptionally low energy consumption of attojoule levels, coupled with fast switching speed. The switching mechanisms are systematically substantiated by electrical and nano-structural analysis, confirming that the h-BN layer facilitates the resistive switching with extremely low high resistance states (HRS) and the native SiOx on Si contributes to suppressing excessive current, enabling attojoule-level energy consumption. Furthermore, the formation of atomic-scale conductive filaments leads to remarkably fast response times within the nanosecond range, and allows for the attainment of multi-resistance states, making these memristors well-suited for next-generation neuromorphic applications. The h-BN-based MIS memristors hold the potential to revolutionize energy consumption limitations in neuromorphic devices, bridging the gap between artificial and biological synapses.

Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer.

We present resistive switching (RS) behavior of few-layer hexagonal boron nitride (h-BN) mediated by defects and interfacial charge transfer. Few-layer h-BN is grown by metal-organic chemical vapor deposition and used as active RS medium in Ti/h-BN/Au structure, exhibiting clear bipolar RS behavior and fast switching characteristics about ∼25 ns without an initial electroforming process. Systematic investigation on microstructural and chemical characteristics of the h-BN reveals that there are structural defects such as homoelemental B-B bonds at grain boundaries and nitrogen vacancies, which can provide preferential pathways for the penetration of Tix+ ions through the h-BN film. In addition, the interfacial charge transfer from Ti to the h-BN is observed by in situ X-ray photoelectron spectroscopy. We suggest that the attractive Coulomb interaction between positively charged Tix+ ions and the negatively charged h-BN surface as a result of the interfacial charge transfer facilitates the migration of Tix+ ions at the Ti/h-BN interface, leading to the facile formation of conductive filaments. We believe that these findings can improve our understanding of the fundamental mechanisms involved in RS behavior of h-BN and contribute a significant step for the future development of h-BN-based nonvolatile memory applications.

Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure.

Two-dimensional (2-D) hexagonal boron nitride (h-BN) has attracted considerable attention for deep ultraviolet optoelectronics and visible single photon sources, however, realization of an electrically-driven light emitter remains challenging due to its wide bandgap nature. Here, we report electrically-driven visible light emission with a red-shift under increasing electric field from a few layer h-BN by employing a five-period Al2O3/h-BN multiple heterostructure and a graphene top electrode. Investigation of electrical properties reveals that the Al2O3 layers act as potential barriers confining injected carriers within the h-BN wells, while suppressing the electrostatic breakdown by trap-assisted tunneling, to increase the probability of radiative recombination. The result highlights a promising potential of such multiple heterostructure as a practical and efficient platform for electrically-driven light emitters based on wide bandgap two-dimensional materials.

Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing.

Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.

Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition.

We demonstrate wafer-scale growth of high-quality hexagonal boron nitride (h-BN) film on Ni(111) template using metal-organic chemical vapor deposition (MOCVD). Compared with inert sapphire substrate, the catalytic Ni(111) template facilitates a fast growth of high-quality h-BN film at the relatively low temperature of 1000 °C. Wafer-scale growth of a high-quality h-BN film with Raman E2g peak full width at half maximum (FWHM) of 18~24 cm-1 is achieved, which is to the extent of our knowledge the best reported for MOCVD. Systematic investigation of the microstructural and chemical characteristics of the MOCVD-grown h-BN films reveals a substantial difference in catalytic capability between the Ni(111) and sapphire surfaces that enables the selective-area growth of h-BN at pre-defined locations over a whole 2-inch wafer. These achievement and findings have advanced our understanding of the growth mechanism of h-BN by MOCVD and will contribute an important step toward scalable and controllable production of high-quality h-BN films for practical integrated two-dimensional materials-based systems and devices.

Defect-Mediated In-Plane Electrical Conduction in Few-Layer sp2-Hybridized Boron Nitrides.

In-plane electrical conduction in sp2-hybridized boron nitride (sp2-BN) is presented to explore a huge potential of sp2-BN as an active material for electronics and ultraviolet optoelectronics. Systematic investigation on temperature-dependent current-voltage ( I- V) characteristics of a few-layer sp2-BN grown by metal-organic vapor-phase epitaxy reveals two types of predominant conduction mechanisms that are Ohmic conduction at the low bias region and space-charge-limited conduction at the high bias region. From the temperature-dependent I- V characteristics, two shallow traps with activation energies of approximately 25 and 185 meV are observed. On the basis of the near-edge X-ray absorption fine-structure spectroscopy, boron-boron (B-B) homoelemental bonding which can be related to grain boundary and nitrogen vacancy (VN) are proposed as the origin of the shallow traps mediating the in-plane conduction in the sp2-BN layer. In addition, a drastic enhancement in the electrical conductivity is observed with the increasing amount of VN that acts as a donor, implying that controlled generation of VN can be an alternative and better approach for the n-type doping of the sp2-BN film rather than ineffective conventional substitutional doping methods.

Unassisted photoelectrochemical water splitting exceeding 7% solar-to-hydrogen conversion efficiency using photon recycling.

Various tandem cell configurations have been reported for highly efficient and spontaneous hydrogen production from photoelectrochemical solar water splitting. However, there is a contradiction between two main requirements of a front photoelectrode in a tandem cell configuration, namely, high transparency and high photocurrent density. Here we demonstrate a simple yet highly effective method to overcome this contradiction by incorporating a hybrid conductive distributed Bragg reflector on the back side of the transparent conducting substrate for the front photoelectrochemical electrode, which functions as both an optical filter and a conductive counter-electrode of the rear dye-sensitized solar cell. The hybrid conductive distributed Bragg reflectors were designed to be transparent to the long-wavelength part of the incident solar spectrum (λ>500 nm) for the rear solar cell, while reflecting the short-wavelength photons (λ<500 nm) which can then be absorbed by the front photoelectrochemical electrode for enhanced photocurrent generation.