Robust helical edge transport in gated InAs/GaSb bilayers.

We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance plateaus precisely quantized to 2e^{2}/h in mesoscopic Hall samples. On the other hand, in larger samples the edge conductance is found to be inversely proportional to the edge length. These characteristics persist in a wide temperature range and show essentially no temperature dependence. The quantized plateaus persist to a 12 T applied in-plane field; the conductance increases from 2e^{2}/h in strong perpendicular fields manifesting chiral edge transport. Our study presents a compelling case for exotic properties of a one-dimensional helical liquid on the edge of InAs/GaSb bilayers.

Observation of edge transport in the disordered regime of topologically insulating InAs/GaSb quantum wells.

We observe edge transport in the topologically insulating InAs/GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall signal at zero magnetic fields, while for symmetric current paths, the conductance between the two mesoscopicly separated probes is quantized to 2e2/h. Both quantized and self-averaged transport show resilience to magnetic fields, and are temperature independent for temperatures between 20 mK and 1 K.

Andreev reflection of helical edge modes in InAs/GaSb quantum spin Hall insulator.

We present an experimental study of S-N-S junctions, with N being a quantum spin Hall insulator made of InAs/GaSb. A front gate is used to vary the Fermi level into the minigap, where helical edge modes exist [Phys. Rev. Lett. 107, 136603 (2011)]. In this regime we observe a ~2e(2)/h Andreev conductance peak, consistent with a perfect Andreev reflection on the helical edge modes predicted by theories. The peak diminishes under a small applied magnetic field due to the breaking of time-reversal symmetry. This work thus demonstrates the helical property of the edge modes in a quantum spin Hall insulator.

Enhancement of the ν = 5/2 fractional quantum Hall state in a small in-plane magnetic field.

Using a 50-nm-width ultraclean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor ν=5/2 fractional quantum Hall effect in a perpendicular magnetic field B∼1.7 T and determined its dependence on tilted magnetic fields. Contrary to all previous results, the 5/2 resistance minimum and the Hall plateau are found to strengthen continuously under an increasing tilt angle 0<θ<25° (corresponding to an in-plane magnetic field 060°, and the composite fermion series [2+p/(2p±1), p=1,2] can be identified. Based on our results, we discuss the relevance of a Skyrmion spin texture at ν=5/2 associated with small Zeeman energy in wide quantum wells, as proposed by Wójs et al. [Phys. Rev. Lett. 104, 086801 (2010)].

Evidence for helical edge modes in inverted InAs/GaSb quantum wells.

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. An electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys. Rev. Lett. 100, 236601 (2008)]. Edge modes persist in spite of sizable bulk conduction and show only a weak magnetic field dependence-a direct consequence of a gap opening away from the zone center.