High-performance printed electronics based on inorganic semiconducting nano to chip scale structures.

The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.

Surface conversion of ZnO nanorods to ZIF-8 to suppress surface defects for a visible-blind UV photodetector.

ZnO nanomaterials are promising building blocks for an efficient UV photodetector; however, their slow sensing behavior and undesired response to visible light, which are attributed to surface defects, such as oxygen or zinc vacancies, are challenges that remain to be addressed. Here, we transformed the ZnO nanorod surface into a zeolitic imidazolate framework-8 (ZIF-8) to eliminate ZnO surface defects. Vertical-type photodetectors were fabricated incorporating a Schottky junction at the ZIF-8/gold (Au) top electrode and could respond to UV light with a rapid response and recovery (1-2 s) and demonstrated a UV-to-visible rejection ratio in the order of 103, qualifying them as efficient visible-blind UV photodetectors. It is noteworthy that the ZIF-8 layer effectively separated the photogenerated electron-hole pairs, and thus reduced their recombination probability. The enhanced photodetector displayed excellent figures-of-merit: a responsivity of 291 A W-1 and a detectivity of 5.9 × 1013 cm Hz1/2 W-1 under illumination at 295 nm.

Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer.

2D molybdenum disulfide (MoS2 ) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2 /SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.

Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate.

A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He-Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm-1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2-air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.

Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3-In2O3-ZnO Thin Film Transistor Performance.

We demonstrated the effect of active layer (channel) thickness and annealing temperature on the electrical performances of Ga2O3-In2O3-ZnO (GIZO) thin film transistor (TFT) having nanoscale channel width (W/L: 500 nm/100 µm). We found that the electron carrier concentration of the channel was decreased significantly with increasing the annealing temperature (100 degrees C to 300 degrees C). Accordingly, the threshold voltage (V(T)) was shifted towards positive voltage (-12.2 V to 10.8 V). In case of channel thickness, the V(T) was shifted towards negative voltage with increasing the channel thickness. The device with channel thickness of 90 nm annealed at 200 degrees C revealed the best device performances in terms of mobility (10.86 cm2/Vs) and V(T) (0.8 V). The effect of channel length was also studied, in which the channel width, thickness and annealing temperature were kept constant such as 500 nm, 90 nm and 200 degrees C, respectively. The channel length influenced the on-current level significantly with small variation of V(T), resulting in lower value of on/off current ratio with increasing the channel length. The device with channel length of 0.5 µm showed enhanced on/off current ratio of 10(6) with minimum V(T) of 0.26 V.

Locally placed nanoscale gold islands film within a TiO2 photoanode for enhanced plasmon light absorption in dye sensitized solar cells.

As metal nanostructures demonstrated extraordinary plasmon resonance, their optical characteristics have widely been investigated in photo-electronic applications. However, there has been no clear demonstration on the location effect of plasmonic metal layer within the photoanode on both optical characteristics and photovoltaic performances. In this research, the gold (Au) nano-islands (NIs) film was embedded at different positions within the TiO2 nanoparticulate photoanode in dye-sensitized solar cells (DSSC) to check the effect of plasmon resonance location on the device performance; at the top, in the middle, at the bottom of the TiO2 photoanode, and also at all the three positions. The Au NIs were fabricated by annealing a Au thin film at 550 °C. The DSSC having the Au NIs-embedded TiO2 photoanode exhibited an increase in short circuit currents (Jsc) and power conversion efficiency (PCE) owing to the plasmon resonance absorption. Thus, the PCE was increased from 5.92% (reference: only TiO2 photoanode) to 6.52% when the Au NIs film was solely positioned at the bottom, in the middle or at the top of TiO2 film. When the Au NIs films were placed at all the three positions, the Jsc was increased by 16% compared to the reference cell, and consequently the PCE was further increased to 7.01%.

Palladium Nanoribbon Array for Fast Hydrogen Gas Sensing with Ultrahigh Sensitivity.

A lithographically aligned palladium nano-ribbon (Pd-NRB) array with gaps of less than 40 nm is fabricated on a poly(ethylene terephthalate) substrate using the direct metal transfer method. The 200 µm Pd-NRB hydrogen gas sensor exhibits an unprecedented sensitivity of 10(9) % after bending treatment, along with fast sensing behavior (80% response time of 3.6 s and 80% recovery time of 8.7 s) at room temperature.

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer.

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.

Orientation-Controllable ZnO Nanorod Array Using Imprinting Method for Maximum Light Utilization in Dye-Sensitized Solar Cells.

We present a holey titanium dioxide (TiO2) film combined with a periodically aligned ZnO nanorod layer (ZNL) for maximum light utilization in dye-sensitized solar cells (DSCs). Both the holey TiO2 film and the ZNL were simultaneously fabricated by imprint technique with a mold having vertically aligned ZnO nanorod (NR) array, which was transferred to the TiO2 film after imprinting. The orientation of the transferred ZNL such as laid, tilted, and standing ZnO NRs was dependent on the pitch and height of the ZnO NRs of the mold. The photoanode composed of the holey TiO2 film with the ZNL synergistically utilized the sunlight due to enhanced light scattering and absorption. The best power conversion efficiency of 8.5 % was achieved from the DSC with the standing ZNL, which represented a 33 % improvement compared to the reference cell with a planar TiO2.

Large area IR microlens arrays of chalcogenide glass photoresists by grayscale maskless lithography.

The ability to use chalcogenide glass thin films as photoresists for one-step maskless grayscale lithographic patterning is demonstrated. It is shown that the chalcogenide photoresists can be used to fabricate grayscale patterns with smooth and continuous profiles such as arrays of cylindrical and spherical microlenses, which are useful as optical structures for IR applications. The etching and exposure parameters are optimized to obtain smooth reproducible lens arrays of 150 µm periodicity and up to ∼170 nm height on large areas (∼1 cm(2)). The roughness is found to increase as a function of the exposure dose and is attributed to the selective dissolution of the As-Se, As-As, and Se-Se bonds present in the nanodistributed phases and the presence of the oxide phase. Thus, a minimum exposure dose produces optimally patterned lens arrays. The focal length calculated for the smooth microlens array is ∼9.3 mm, indicating the suitability of the lens arrays for focusing applications in the IR region.