Highly Sensitive Broadband Polarized Photodetector Based on the As0.6P0.4/WSe2 Heterostructure toward Imaging and Optical Communication Application.

Polarization-sensitive photodetectors based on two-dimensional anisotropic materials still encounter the issues of narrow spectral coverage and low polarization sensitivity. To address these obstacles, anisotropic As0.6P0.4 with a narrow band gap has been integrated with WSe2 to construct a type-II heterostructure, realizing a high-performance polarization-sensitive photodetector with broad spectral range from 405 to 2200 nm. By operating in photovoltaic mode at zero bias, the device shows a very low dark current of ∼0.02 picoampere, high responsivity of 492 m A/W, and high photoswitching ratio of 6 × 104, yielding a high specific detectivity of 1.4 × 1012 Jones. The strong in-plane anisotropy of As0.6P0.4 endows the device with a capability of polarization-sensitive detection with a high polarization ratio of 6.85 under a bias voltage. As an image sensor and signal receiver, the device shows great potential in imaging and optical communication applications. This work develops an anisotropic vdW heterojunction to realize polarization-sensitive photodetectors with wide spectral coverage, fast response, and high sensitivity, providing a new candidate for potential applications of polarization-resolved electronics and photonics.

[A Family with Congenital Dysfibrinogenemia and Blood Transfusion].

OBJECTIVE: To investigate a family with congenital dysfibrinogenemia, and analyze the risk of hemorrhage and thrombosis and blood transfusion strategies. METHODS: Prothrombin time (PT), activated partial thromboplastin time (APTT) and thrombin time (TT) of the proband and her family members were detected by automatic coagulometer, fibrinogen (Fg) activity and antigen were detected by Clauss method and PT algorithm respectively. Meanwhile, thromboelastometry was analyzed for proband and her family members. Then, peripheral blood samples of the proband and her family members were collected, and all exons of FGA, FGB and FGG and their flanks were amplified by PCR and sequenced to search for gene mutations. RESULTS: The proband had normal APTT and PT, slightly prolonged TT, reduced level of Fg activity (Clauss method). The Fg of the proband's aunt, son and daughter all decreased to varying degrees. The results of thromboelastogram indicated that Fg function of the proband and her family members (except her son) was basically normal. Gene analysis showed that there were 6233 G/A (p.AαArg35His) heterozygous mutations in exon 2 of FGA gene in the proband, her children and aunt. In addition, 2 polymorphic loci were found in the family, they were FGA gene g.9308A/G (p.AαThr331Ala) and FGB gene g.12628G/A (p.BßArg478Iys) polymorphism, respectively. The proband was injected with 10 units of cryoprecipitate 2 hours before delivery to prevent bleeding, and no obvious bleeding occurred during and after delivery. CONCLUSION: Heterozygous mutation of 6233G/A (p.AαArg35His) of FGA gene is the biogenetic basis of the disease in this family with congenital dysfibrinogenemia.

Multifunctional GeAs/WS2 Heterojunctions for Highly Polarization-Sensitive Photodetectors in the Short-Wave Infrared Range.

Polarization-sensitive photodetectors in the infrared range have attracted considerable attention because of their unique and wide application prospects in polarization sensors and remote sensing. However, it is challenging to achieve short-wave infrared polarization detection as most polarization-sensitive photodetectors are based on transition-metal dichalcogenide (TMD) materials with in-plane symmetric crystal structure and sizable band gap (1-2 eV). In this work, we design a type-II GeAs/WS2 heterojunction realizing superior self-driven polarization-sensitive photodetection in the short-wave infrared region. The device shows obvious rectifying behavior with a rectification ratio of 1.5 × 104 in the dark and excellent photoresponse characteristics in a broad spectral range. Accordingly, the high responsivity of 509 mA/W, large on/off ratio of 103, a high EQE of 99.8%, and a high specific detectivity of 1.08 × 1012 Jones are obtained under 635 nm laser irradiation. Taking advantage of the narrow band gap of GeAs with an anisotropic structure, the detection spectral coverage can be extended from the visible to the short-wave infrared range (635-1550 nm). Further, the GeAs/WS2 heterojunction shows high polarization sensitivity with an anisotropic photocurrent ratio of 4.5 and 3.1 at zero bias under 1310 and 1550 nm laser irradiation, respectively, which is much higher than that of reported polarization-sensitive photodetectors in the infrared region. This work provides an effective route using low-symmetry 2D materials with narrow band gap and anisotropic structure to design van der Waals (vdW) heterojunctions, realizing multifunctional optoelectronics for rectifying, photovoltaics, and polarization-sensitive photodetectors with spectral coverage up to 1550 nm.

Raman Anisotropy and Polarization-Sensitive Photodetection in 2D Bi2O2Se-WSe2 Heterostructure.

Two-dimensional (2D) bismuth oxyselenide (Bi2O2Se) has attracted increasing attention due to its high mobility, tunable band gap, and air stability. The surface reconstruction of cleaved Bi2O2Se due to the electrostatic interlayer interactions can lead to the in-plane anisotropic structure and physics. In this work, we first discovered the strong anisotropy in phonon modes through the angle-resolved polarized Raman (ARPR) spectra. Benefiting from the anisotropic feature, a high-performance polarization-sensitive photodetector has been achieved by constructing a heterostructure composed of the multilayer Bi2O2Se as polarized-light sensitizers and 2D WSe2 as a photocarrier transport channel. The detectors exhibit broadband response spectra from 405 to 1064 nm along with high responsivity, fast speed, and high sensitivity owing to the photogating effect in this device architecture. More importantly, the photocurrent shows strong light polarization dependence with the maximum dichroism ratio of 4.9, and a reversal is observed for the angle-dependent photocurrent excited by polarized 405 and 635 nm light. This work provides new insight in terms of optical and photocurrent anisotropy of exfoliated Bi2O2Se and expands its applications in angle-resolved electronics and optoelectronics.