Patellofemoral joint cartilage lesions frequently develop shortly after anterior cruciate ligament reconstruction using hamstring tendon autograft: A systematic review.

PURPOSE: This study aimed to investigate the development of patellofemoral joint (PFJ) cartilage lesions following anterior cruciate ligament reconstruction (ACLR) using hamstring tendon (HT) autograft through a systematic review. METHODS: A comprehensive search was conducted in PubMed, Embase, Cochrane Library and Google Scholar databases to find articles published from database inception until 15 November 2023. The search terms were [('Anterior Cruciate Ligament' [mesh] OR 'anterior cruciate ligament' OR 'ACL') AND 'reconstruction' AND 'cartilage' AND ('second look arthroscopy' OR 'second-look arthroscopy' OR 'MRI' OR 'magnetic resonance imaging')]. Inclusion criteria were studies that reported on the occurrence of PFJ cartilage lesions following ACLR using HT autograft, as determined by second-look arthroscopy or follow-up magnetic resonance imaging (MRI). RESULTS: Fifteen studies (1084 patients) met the inclusion criteria, with follow-up periods ranging from 1 to 5 years. In the results of second-look arthroscopy, cartilage grade deterioration was observed, ranging from MDs of 0.1 to 2.0 in the patella and from 0 to 1.0 in the trochlea. Follow-up MRI results reported the incidence of PFJ cartilage degeneration with rates ranging from 20% to 44%. Patient-reported outcome measures often showed no significant association with PFJ cartilage lesions. The studies included in this review reported various risk factors for cartilage lesion development. CONCLUSION: Cartilage lesions in the PFJ, detected using second-look arthroscopy or follow-up MRI, frequently develop shortly after ACLR using HT autograft. At this stage, patients might not show specific symptoms; however, those with risk factors require careful observation and evaluation by clinicians during follow-up. LEVEL OF EVIDENCE: Level IV.

Effectiveness of Toothbrushing Technique for Biofilm Removal and Postoperative Infection Control after Spinal Fusion Surgery: A Retrospective Study.

This retrospective study was designed to investigate the effectiveness of using a toothbrush, which is commonly used in our daily life, for biofilm removal and infection control in the treatment of spinal infections occurring after spinal fusion surgery. Currently, a biofilm is thought to form on the surface of the metal inserted during spine fusion surgery. We aim to determine the differences in clinical outcomes between using and not using a toothbrush to remove biofilm while performing conventional drainage, curettage, and debridement. A total of 1081 patients who underwent anterior or posterior spinal fusion surgery between November 2018 and October 2022 were screened. The study included 60 patients who developed surgical site infection and underwent incision and drainage surgery either with a toothbrush (n = 20) or without a toothbrush (n = 40). Failure of infection control that requires revision surgery occurred in 2 patients (10%) in the Toothbrush group and in 14 patients (35%) in the No-Toothbrush group (p = 0.039). Thus, the rate of additional surgery was significantly lower in the Toothbrush group. Additionally, normalization of c-reactive protein levels occurred significantly faster in the Toothbrush group (p = 0.044). Therefore, using a toothbrush to treat spinal infections following spinal fusion surgery appears to have beneficial mechanical debridement effects, resulting in improved clinical results, which were also confirmed based on the electron microscopic images.

Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO2 thin films prepared by atomic layer deposition.

Ferroelectric field-effect transistors (FETs) with a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) gate stack were fabricated and characterized to elucidate the key process parameters and to optimize the process conditions for guaranteeing nonvolatile memory operations of the device when the undoped HfO2 was employed as ferroelectric gate insulator. The impacts of top gate (TG) for the MFM part on the memory operations of the MFMIS-FETs were intensively investigated when the TG was chosen as metal Pt or oxide ITO electrode. The ferroelectric memory window of the MFMIS-FETs with ITO/HfO2/TiN/SiO2/Si gate stack increased to 3.8 V by properly modulating the areal ratio between two MFM and MIS capacitors. The memory margin as high as 104 was obtained during on- and off-program operations with a program pulse duration as short as 1 µs. There was not any marked degradation in the obtained memory margin even after a lapse of retention time of 104 s at 85 °C and repeated program cycles of 10,000. These obtained improvements in memory operations resulted from the fact that the choice of ITO TG could provide effective capping effects and passivate the interfaces.

Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO2 thin films.

Human brain-like synaptic behaviors of the ferroelectric field-effect transistors (FeFETs) were emulated by introducing the metal-ferroelectric-metal-insulator-semiconductor (MFMIS) gate stacks employing Al-doped HfO2 (Al:HfO2) ferroelectric thin films even at a low operation voltage. The synaptic plasticity of the MFMIS-FETs could be gradually modulated by the partial polarization characteristics of the Al:HfO2 thin films, which were examined to be dependent on the applied pulse conditions. Based on the ferroelectric polarization switching dynamics of the Al:HfO2 thin films, the proposed devices successfully emulate biological synaptic functions, including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), and spike timing-dependent plasticity (STDP). The channel conductance of the FeFETs could be controlled by partially switching the ferroelectric polarization of the Al:HfO2 gate insulators by means of pulse-number and pulse-amplitude modulations. Furthermore, the 3 × 3 array integrated with the Al:HfO2 MFMIS-FETs was also fabricated, in which electrically modifiable weighted-sum operation could be well verified in the 3 × 3 synapse array configuration.

Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor.

We present a simple, accurate open-circuit sensitivity model based on both analytically calculated lumped and empirically extracted lumped-parameters that enables a capacitive acoustic sensor to be efficiently characterized in the frequency domain at the wafer level. Our mixed model is mainly composed of two key strategies: the approximately linearized electric-field method (ALEM) and the open- and short-calibration method (OSCM). Analytical ALEM can separate the intrinsic capacitance from the capacitance of the acoustic sensor itself, while empirical OSCM, on the basis of one additional test sample excluding the membrane, can extract the capacitance value of the active part from the entire sensor chip. FEM simulation verified the validity of the model within an error range of 2% in the unit cell. Dynamic open-circuit sensitivity is modelled from lumped parameters based on the equivalent electrical circuit, leading to a modelled resonance frequency under a bias condition. Thus, eliminating a complex read-out integrated circuit (ROIC) integration process, this mixed model not only simplifies the characterization process, but also improves the accuracy of the sensitivity because it considers the fringing field effect between the diaphragm and each etching hole in the back plate.

SnO2 nanoslab as NO2 sensor: identification of the NO2 sensing mechanism on a SnO2 surface.

Among the various metal oxides, SnO2 has been most widely exploited as a semiconductor gas sensor for its excellent functionalities. Models illustrating the sensing mechanism of SnO2 have been proposed and tested to explain experimentally derived "power laws". The models, however, are often based on somewhat simplistic assumptions; for instance, the net charge transfer from an adsorbate to a sensor surface site is assumed to occur only by integer values independent of the crystallographic planes. In this work, we use layer-shaped SnO2 crystallites with one nanodimension (1ND-crystallites) as NO2 gas sensing elements under flat band conditions, and derive appropriate "power laws" by combining the dynamics of gas molecules on the sensor surface with a depletion theory of semiconductor. Our experimentally measured sensor response as a function of NO2 concentration when compared with the theoretically derived power law indicates that sensing occurs primarily through the chemisorption of single NO2 molecules at oxygen vacancy sites on the sensor surface.

Bio-information scanning technology using an optical pick-up head.

We have developed a low cost and a highly compact bio-chip detection technology by modifying a commercially available optical pick-up head for CD/DVD. The highly parallel and miniaturized hybridization assays are addressed by the fluorescence emitted by the DNA-chip using the optical pick-up head. The gap between the objective lens and the bio-chip is regulated by the focus servo during the detection of the fluorescence signal. High-resolution and high-speed scanning is effectively realized by this simple scanning system instead of utilizing high-precision mechanism. Regardless of achievement of effective detection mechanism, the technique of fluorescence detection can prove to be disadvantageous because of the low stability of the dyes with low S/N ratio and an expensive setup such as a PMT detector is always required for fluorescence detection. We propose, for the first time, a novel scanning scheme based on metal nanoparticles in combination with a bio-chip substrate having a phase change recording layer. We found that the phase change process is highly affected by the existence of the densely condensed metal nanoparticles on the phase change layer during the writing process of the pick-up head.

Scalable assembly method of vertically-suspended and stretched carbon nanotube network devices for nanoscale electro-mechanical sensing components.

For the first time, vertically suspended and stretched carbon nanotube network junctions were fabricated in large quantity via the directed assembly strategy using only conventional microfabrication facilities. In this process, surface molecular patterns on the side-wall of the Al structures were utilized to guide the assembly and alignment of carbon nanotubes in the solution. We also performed extensive experimental (electrical and mechanical) analysis and theoretical simulation about the vertically suspended single-walled carbon nanotube network junctions. The junctions exhibited semiconductor-like conductance behavior. Furthermore, we demonstrated gas sensing and electromechanical sensing using these devices.