Ion beam composition in ion source based on magnetron sputtering discharge at extremely low working pressure.

In an ion source based on a pulsed planar magnetron sputtering discharge with gas (argon) feed, the fraction of metal ions in the ion beam decreases with decreasing gas pressure, down to the minimum possible working pressure of the magnetron sputtering discharge. The use of a supplementary vacuum arc plasma injector provides stable operation of the pulsed magnetron sputtering discharge at extremely low pressure and without gas feed. Under these conditions, the pressure dependence of the gaseous ion fraction displays a maximum (is nonmonotonic).

Pulsed vacuum arc plasma source of supersonic metal ion flow.

Supersonic plasma flows with densities of 1013-1016 cm-3 find application in various fields of physics and technology such as surface modification, simulation of plasma impact in fusion facilities, and laboratory studies of space phenomena. The work outlined here describes a pulsed vacuum arc source of supersonic dense metal plasma flow. The design, working principle, features of the power supply circuit, and main parameters of the plasma source in relation to the parameter of the vacuum arc pulse are discussed. Flows of ionized aluminum, copper, tantalum, and molybdenum were investigated. At a vacuum arc current amplitude of 25 kA, the source generated a plasma with a density of 3 × 1015 cm-3. The ion velocity in the plasma flow and the ion charge state composition were measured. For an aluminum cathode, we have carried out measurements of the macroparticle fraction and the erosion rate. This supersonic metal ion plasma flow source is primarily designed for studying the flow interaction with an inhomogeneous magnetic field, with simultaneous application of electron cyclotron resonance irradiation from high-power pulsed gyrotrons, but may also find other applications.

Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow.

Boron ion beams are widely used for semiconductor ion implantation and for surface modification for improving the operating parameters and increasing the lifetime of machine parts and tools. For the latter application, the purity requirements of boron ion beams are not as stringent as for semiconductor technology, and a composite cathode of lanthanum hexaboride may be suitable for the production of boron ions. We have explored the use of two different approaches to boron plasma production: vacuum arc and planar high power impulse magnetron in self-sputtering mode. For the arc discharge, the boron plasma is generated at cathode spots, whereas for the magnetron discharge, the main process is sputtering of cathode material. We present here the results of comparative test experiments for both kinds of discharge, aimed at determining the optimal discharge parameters for maximum yield of boron ions. For both discharges, the extracted ion beam current reaches hundreds of milliamps and the fraction of boron ions in the total extracted ion beam is as high as 80%.

Lifetime of hydrogenated composite cathodes in a vacuum arc ion source.

The paper reports on a study of the mass-charge state of the plasma produced in a vacuum arc discharge with composite cathodes which were copper-disk coated with a hydrogenated Zr film of thicknesses 9, 22, and 35 µm. The cathodes allow the generation of multicomponent gas and metal ion beams with a hydrogen ion content from several to several tens of percent. Also investigated is the dependence of the H ion fraction in a beam on the Zr film thickness during erosion to the point of disappearance of Zr peaks in mass-charge spectra. The ability of the vacuum arc system to produce H ions is analyzed by analyzing the cathode lifetime as a function of the film thickness and pulse repetition frequency.

A vacuum spark ion source: High charge state metal ion beams.

High ion charge state is often important in ion beam physics, among other reasons for the very practical purpose that it leads to proportionately higher ion beam energy for fixed accelerating voltage. The ion charge state of metal ion beams can be increased by replacing a vacuum arc ion source by a vacuum spark ion source. Since the voltage between anode and cathode remains high in a spark discharge compared to the vacuum arc, higher metal ion charge states are generated which can then be extracted as an ion beam. The use of a spark of pulse duration less than 10 µs and with current up to 10 kA allows the production of ion beams with current of several amperes at a pulse repetition rate of up to 5 pps. We have demonstrated the formation of high charge state heavy ions (bismuth) of up to 15 + and a mean ion charge state of more than 10 +. The physics and techniques of our vacuum spark ion source are described.

Molecular ion sources for low energy semiconductor ion implantation (invited).

Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described.

Inverted time-of-flight spectrometer for mass-to-charge analysis of plasma.

The paper describes the principle of operation, design special features, and parameters of an inverted time-of-flight spectrometer. The spectrometer is designed in such way that its deflecting plates, drift tube, and primary measuring system are at high potential with respect to the ground potential, whereas plasma is formed near grounded electrodes. This type of configuration greatly extends the application range of the device, making it possible to measure the mass-to-charge composition of plasma with wide range of parameters.

Ion angular distribution in plasma of vacuum arc ion source with composite cathode and elevated gas pressure.

The Metal Vapor Vacuum Arc (MEVVA) ion sources are capable of generating ion beams of almost all metals of the periodic table. For this kind of ion source, a combination of gas feeding with magnetic field allows the simultaneous generation of both metal and gaseous ions. That makes the MEVVA ion source an excellent instrument for science and application. This work presents results of investigation for ion angular distributions in vacuum arc plasma of Mevva-V.Ru ion source for composite cathodes and for elevated gas pressure. It was shown that for all the cathode materials, singly charged ions have wider angular distribution than multiply charged ions. Increasing the working gas pressure leads to a significant change in the angular distribution of gaseous ions, while with the distribution of metal ions gas remains practically unchanged. The reasons for such different influences are discussed.

Generation of high charge state platinum ions on vacuum arc plasma heated by gyrotron radiation.

The hybrid high charge metal ion source based on vacuum arc plasma heated by gyrotron radiation into simple magnetic trap has been developed. Two types of magnetic traps were used: a mirror configuration and a cusp one with inherent "minimum-B" structure. Pulsed high power (>100 kW) gyrotrons with frequency 37.5 GHz and 75 GHz were used for heating the vacuum arc plasma injected into the traps. Two different ways were used for injecting the metal plasma-axial injection by a miniature arc source located on-axis near the microwave window, and simultaneous radial injection by a number of sources mounted radially at the midplane of the traps. This article represents all data gathered for platinum ions, thus making comparison of the experimental results obtained with different traps and injections convenient and accurate.

Generation of high charge state metal ion beams by electron cyclotron resonance heating of vacuum arc plasma in cusp trap.

A method for generating high charge state heavy metal ion beams based on high power microwave heating of vacuum arc plasma confined in a magnetic trap under electron cyclotron resonance conditions has been developed. A feature of the work described here is the use of a cusp magnetic field with inherent "minimum-B" structure as the confinement geometry, as opposed to a simple mirror device as we have reported on previously. The cusp configuration has been successfully used for microwave heating of gas discharge plasma and extraction from the plasma of highly charged, high current, gaseous ion beams. Now we use the trap for heavy metal ion beam generation. Two different approaches were used for injecting the vacuum arc metal plasma into the trap--axial injection from a miniature arc source located on-axis near the microwave window, and radial injection from sources mounted radially at the midplane of the trap. Here, we describe preliminary results of heating vacuum arc plasma in a cusp magnetic trap by pulsed (400 µs) high power (up to 100 kW) microwave radiation at 37.5 GHz for the generation of highly charged heavy metal ion beams.

Multicharged ion source based on Penning-type discharge with electron cyclotron resonance heating by millimeter waves.

We suggest a Penning-type discharge as a trigger discharge for fast development of pulsed electron cyclotron resonance plasma. The Penning-type discharge glows at a low pressure as needed. Gyrotron radiation (75 GHz, 200 kW, 1 ms) was used for plasma heating. Fully striped helium ions were demonstrated, average charge of ions in the plasma was ≈ 2. Experiment and calculations show that high charge states of heavier gases require lower initial pressure and longer development time. Only moderate charge states are achievable in this pulsed scheme.

Upgraded vacuum arc ion source for metal ion implantation.

Vacuum arc ion sources have been made and used by a large number of research groups around the world over the past twenty years. The first generation of vacuum arc ion sources (dubbed "Mevva," for metal vapor vacuum arc) was developed at Lawrence Berkeley National Laboratory in the 1980s. This paper considers the design, performance parameters, and some applications of a new modified version of this kind of source which we have called Mevva-V.Ru. The source produces broad beams of metal ions at an extraction voltage of up to 60 kV and a time-averaged ion beam current in the milliampere range. Here, we describe the Mevva-V.Ru vacuum arc ion source that we have developed at Tomsk and summarize its beam characteristics along with some of the applications to which we have put it. We also describe the source performance using compound cathodes.

Angular distribution of plasma in the vacuum arc ion source.

This paper presents measurements of the angular distribution of the plasma components and different charge states of metal ions generated by a MEVVA-type ion source and measured by a time-of-flight mass-spectrometer. The experiments were performed for different cathode materials (Al, Cu, and Ti) and for different parameters of the vacuum arc discharge. The results are compared with prior results reported by other authors. The influence of different discharge parameters on the angular distribution in a vacuum arc source is discussed.

Low-energy, high-current, ion source with cold electron emitter.

An ion source based on a two-stage discharge with electron injection from a cold emitter is presented. The first stage is the emitter itself, and the second stage provides acceleration of injected electrons for gas ionization and formation of ion flow (<20 eV, 5 A dc). The ion accelerating system is gridless; acceleration is accomplished by an electric field in the discharge plasma within an axially symmetric, diverging, magnetic field. The hollow cathode electron emitter utilizes an arc discharge with cathode spots hidden inside the cathode cavity. Selection of the appropriate emitter material provides a very low erosion rate and long lifetime.

High-energy metal ion implantation for reduction of surface resistivity of alumina ceramic.

In this work, the possibility to increase the surface conductivity of ceramic insulators through their treatment with accelerated metal ion beams produced by a MevvaV.Ru vacuum arc source is demonstrated. The increase in surface conductivity is made possible due to experimental conditions in which an insulated collector is charged by beam ions to a potential many times lower than the accelerating voltage, and hence, than the average beam ion energy. The observed effect of charge neutralization of the accelerated ion beam is presumably associated with electrons knocked out of the electrodes of the accelerating system of the source and of the walls of the vacuum chamber by the accelerated ions.

Glow plasma trigger for electron cyclotron resonance ion sources.

Electron cyclotron resonance ion sources (ECRISs) are particularly useful for nuclear, atomic, and high energy physics, as unique high current generators of multicharged ion beams. Plasmas of gas discharges in an open magnetic trap heated by pulsed (100 micros and longer) high power (100 kW and higher) high-frequency (greater than 37.5 GHz) microwaves of gyrotrons is promising in the field of research in the development of electron cyclotron resonance sources for high charge state ion beams. Reaching high ion charge states requires a decrease in gas pressure in the magnetic trap, but this method leads to increases in time, in which the microwave discharge develops. The gas breakdown and microwave discharge duration becomes greater than or equal to the microwave pulse duration when the pressure is decreased. This makes reaching the critical plasma density initiate an electron cyclotron resonance (ECR) discharge during pulse of microwave gyrotron radiation with gas pressure lower than a certain threshold. In order to reduce losses of microwave power, it is necessary to shorten the time of development of the ECR discharge. For fast triggering of ECR discharge under low pressure in an ECRIS, we initially propose to fill the magnetic trap with the plasmas of auxiliary pulsed discharges in crossed ExB fields. The glow plasma trigger of ECR based on a Penning or magnetron discharge has made it possible not only to fill the trap with plasma with density of 10(12) cm(-3), required for a rapid increase in plasma density and finally for ECR discharge ignition, but also to initially heat the plasma electrons to T(e) approximately = 20 eV.

Generation of multicomponent ion beams by a vacuum arc ion source with compound cathode.

This paper presents the results of time-of-flight mass spectrometry studies of the elemental and mass-to-charge state compositions of metal ion beams produced by a vacuum arc ion source with compound cathode (WC-Co(0.5), Cu-Cr(0.25), Ti-Cu(0.1)). We found that the ion beam composition agrees well with the stoichiometric composition of the cathode material from which the beam is derived, and the maximum ion charge state of the different plasma components is determined by the ionization capability of electrons within the cathode spot plasma, which is common to all components. The beam mass-to-charge state spectrum from a compound cathode features a greater fraction of multiply charged ions for those materials with lower electron temperature in the vacuum arc cathode spot, and a smaller fraction for those with higher electron temperature within the spot. We propose a potential diagram method for determination of attainable ion charge states for all components of the compound cathodes.

Boron ion source based on planar magnetron discharge in self-sputtering mode.

An ion source based on a planar magnetron sputtering device with thermally isolated target has been designed and demonstrated. For a boron sputtering target, high target temperature is required because boron has low electrical conductivity at room temperature, increasing with temperature. The target is well-insulated thermally and can be heated by an initial low-current, high-voltage discharge mode. A discharge power of 16 W was adequate to attain the required surface temperature (400 degrees C), followed by transition of the discharge to a high-current, low-voltage mode for which the magnetron enters a self-sputtering operational mode. Beam analysis was performed with a time-of-flight system; the maximum boron ion fraction in the beam is greater than 99%, and the mean boron ion fraction, time-integrated over the whole pulse length, is about 95%. We have plans to make the ion source steady state and test with a bending magnet. This kind of boron ion source could be competitive to conventional boron ion sources that utilize compounds such as BF(3), and could be useful for semiconductor industry application.

Broad-beam high-current dc ion source based on a two-stage glow discharge plasma.

We have designed, made, and demonstrated a broad-beam, dc, ion source based on a two-stage, hollow-cathode, and glow discharges plasma. The first-stage discharge (auxiliary discharge) produces electrons that are injected into the cathode cavity of a second-stage discharge (main discharge). The electron injection causes a decrease in the required operating pressure of the main discharge down to 0.05 mTorr and a decrease in required operating voltage down to about 50 V. The decrease in operating voltage of the main discharge leads to a decrease in the fraction of impurity ions in the ion beam extracted from the main gas discharge plasma to less than 0.2%. Another feature of the source is a single-grid accelerating system in which the ion accelerating voltage is applied between the plasma itself and the grid electrode. The source has produced steady-state Ar, O, and N ion beams of about 14 cm diameter and current of more than 2 A at an accelerating voltage of up to 2 kV.

Gridless, very low energy, high-current, gaseous ion source.

We have made and tested a very low energy gaseous ion source in which the plasma is established by a gaseous discharge with electron injection in an axially diverging magnetic field. A constricted arc with hidden cathode spot is used as the electron emitter (first stage of the discharge). The electron flux so formed is filtered by a judiciously shaped electrode to remove macroparticles (cathode debris from the cathode spot) from the cathode material as well as atoms and ions. The anode of the emitter discharge is a mesh, which also serves as cathode of the second stage of the discharge, providing a high electron current that is injected into the magnetic field region where the operating gas is efficiently ionized. In this discharge configuration, an electric field is formed in the ion generation region, accelerating gas ions to energy of several eV in a direction away from the source, without the use of a gridded acceleration system. Our measurements indicate that an argon ion beam is formed with an energy of several eV and current up to 2.5 A. The discharge voltage is kept at less than 20 V, to keep below ion sputtering threshold for cathode material, a feature which along with filtering of the injected electron flow, results in extremely low contamination of the generated ion flow.