Effects of Antisolvent Treatment on Copper(I) Thiocyanate Hole Transport Layer in n-i-p Perovskite Solar Cells.

Copper(I) thiocyanate (CuSCN) is considered an efficient HTL of low cost and with high stability in perovskite solar cells (PSCs). However, the diethyl sulfide solvent used for CuSCN preparation is known to cause damage to the underlying perovskite layer in n-i-p PSCs. Antisolvent treatment of CuSCN during spin-coating can effectively minimize interfacial interactions. However, the effects of antisolvent treatment are not sufficiently understood. In this study, the effects of five different antisolvents were investigated. Scanning electron microscopy and X-ray diffraction analyses showed that the antisolvent treatment improved the crystallinity of the CuSCN layer on the perovskite layer and reduced damage to the perovskite layer. However, X-ray and ultraviolet photoelectron spectroscopy analyses showed that antisolvent treatment did not affect the chemical bonds or electronic structures of CuSCN. As a result, the power conversion efficiency of the PSCs was increased from 14.72% for untreated CuSCN to 15.86% for ethyl-acetate-treated CuSCN.

Improvement of Thermal Stability and Photoelectric Performance of Cs2PbI2Cl2/CsPbI2.5Br0.5 Perovskite Solar Cells by Triple-Layer Inorganic Hole Transport Materials.

Conventional hole transport layer (HTL) Spiro-OMeTAD requires the addition of hygroscopic dopants due to its low conductivity and hole mobility, resulting in a high preparation cost and poor device stability. Cuprous thiocyanate (CuSCN) is a cost-effective alternative with a suitable energy structure and high hole mobility. However, CuSCN-based perovskite solar cells (PSCs) are affected by environmental factors, and the solvents of an HTL can potentially corrode the perovskite layer. In this study, a Co3O4/CuSCN/Co3O4 sandwich structure was proposed as an HTL for inorganic Cs2PbI2Cl2/CsPbI2.5Br0.5 PSCs to address these issues. The Co3O4 layers can serve as buffer and encapsulation layers, protecting the perovskite layer from solvent-induced corrosion and enhancing hole mobility at the interface. Based on this sandwich structure, the photovoltaic performances of the Cs2PbI2Cl2/CsPbI2.5Br0.5 PSCs are significantly improved, with the power conversion efficiency (PCE) increasing from 9.87% (without Co3O4) to 11.06%. Furthermore, the thermal stability of the devices is also significantly enhanced, retaining 80% of its initial PCE after 40 h of continuous aging at 60 °C. These results indicate that the Co3O4/CuSCN/Co3O4 sandwich structure can effectively mitigate the corrosion of the perovskite layer by solvents of an HTL and significantly improves the photovoltaic performance and thermal stability of devices.

Ultrafast Coherent Hole Injection at the Interface between CuSCN and Polymer PM6 Using Femtosecond Mid-Infrared Spectroscopy.

Tracking the dynamics of ultrafast hole injection into copper thiocyanate (CuSCN) at the interface can be experimentally challenging. These challenges include restrictions in accessing the ultraviolet spectral range through transient electronic spectroscopy, where the absorption spectrum of CuSCN is located. Time-resolved vibrational spectroscopy solves this problem by tracking marker modes at specific frequencies and allowing direct access to dynamical information at the molecular level at donor-acceptor interfaces in real time. This study uses photoabsorber PM6 (poly[(2,6-(4,8-bis(5-(2-ethylhexyl-3-fluoro)thiophen-2-yl)-benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7'-bis(2-ethylhexyl)-benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))]) as a model system to explore and decipher the hole transfer dynamics of CuSCN using femtosecond (fs) mid-infrared (IR) spectroscopy. The time-resolved results indicate that excited PM6 exhibits a sharp vibrational mode at 1599 cm-1 attributed to the carbonyl group, matching the predicted frequency position obtained from time-dependent density functional theory (DFT) calculations. The fs mid-IR spectroscopy demonstrates a fast formation (<168 fs) and blue spectral shift of the CN stretching vibration from 2118 cm-1 for CuSCN alone to 2180 cm-1 for PM6/CuSCN, confirming the hole transfer from PM6 to CuSCN. The short interfacial distance and high frontier orbital delocalization obtained from the interfacial DFT models support a coherent and ultrafast regime for hole transfer. These results provide direct evidence for hole injection at the interface of CuSCN for the first time using femtosecond mid-IR spectroscopy and serve as a new investigative approach for interfacial chemistry and solar cell communities.

Towards a CdTe Solar Cell Efficiency Promotion: The Role of ZnO:Al and CuSCN Nanolayers.

A numerical simulation is a valuable tool since it allows the optimization of both time and the cost of experimental processes for time optimization and the cost of experimental processes. In addition, it will enable the interpretation of developed measurements in complex structures, the design and optimization of solar cells, and the prediction of the optimal parameters that contribute to manufacturing a device with the best performance. In this sense, a detailed simulation study was carried out in this work by the Solar Cell Capacitance Simulator (SCAPS). In particular, we evaluate the influence of absorber and buffer thickness, absorber defect density, work function in back contact, Rs, Rsh, and carrier concentration on a CdTe/CdS cell to maximize its performance. Furthermore, the incorporation effect of ZnO:Al (TCO) and CuSCN (HTL) nanolayers was studied for the first time. As a result, the efficiency of the solar cell was maximized from 16.04% to 17.74% by increasing the Jsc and Voc. This work will play an essential role in enhancing the performance of CdTe-based devices with the best performance.

Efficient and Stable Carbon-Based Perovskite Solar Cells Enabled by Mixed CuPc:CuSCN Hole Transporting Layer for Indoor Applications.

Perovskite solar cells (PSCs) are an innovative technology with great potential to offer cost-effective and high-performance devices for converting light into electricity that can be used for both outdoor and indoor applications. In this study, a novel hole-transporting layer (HTL) was created by mixing copper phthalocyanine (CuPc) molecules into a copper(I) thiocyanate (CuSCN) film and was applied to carbon-based PSCs with cesium/formamidinium (Cs0.17FA0.83Pb(I0.83Br0.17)3) as a photoabsorber. At the optimum concentration, a high power conversion efficiency (PCE) of 15.01% was achieved under AM1.5G test conditions, and 32.1% PCE was acquired under low-light 1000 lux conditions. It was discovered that the mixed CuPc:CuSCN HTL helps reduce trap density and improve the perovskite/HTL interface as well as the HTL/carbon interface. Moreover, the PSCs based on the mixed CuPc:CuSCN HTL provided better stability over 1 year due to the hydrophobicity of CuPc material. In addition, thermal stability was tested at 85 °C and the devices achieved an average efficiency drop of approximately 50% of the initial PCE value after 1000 h. UV light stability was also examined, and the results revealed that the average efficiency drop of 40% of the initial value for 70 min of exposure was observed. The work presented here represents an important step toward the practical implementation of the PSC as it paves the way for the development of cost-effective, stable, yet high-performance PSCs for both outdoor and indoor applications.

CuSCN/Si heterojunction near-infrared photodetector based on micro/nano light-trapping structure.

In this paper, high-performance CuSCN/Si heterojunction near-infrared photodetectors were successfully prepared using nanoscale light-trapping optical structures. Various light-trapping structures of ortho-pyramids, inverted pyramids and silicon nanowires were prepared on silicon substrates. Then, CuSCN films were spin-coated on silicon substrates with high crystalline properties for the assembly of CuSCN/Si photodetectors. Their reflectance spectra and interfacial passivation properties were characterized, demonstrating their superiority of light-trapping structures in high light response. Under the irradiation of 980 nm near-infrared light, a maximum responsivity of 2.88 A W-1at -4 V bias and a specific detectivity of 5.427 × 1010Jones were obtained in the CuSCN/Si heterojunction photodetectors prepared on planner silicon due to 3.6 eV band gap of CuSCN. The substrates of the light-trapping structure were then applied to the CuSCN/Si heterojunction photodetectors. A maximum responsivity of 10.16 A W-1and a maximum specific detectivity of 1.001 × 1011Jones were achieved under the 980 nm near-infrared light irradiation and -4 V bias, demonstrating the advanced performance of CuSCN/Si heterojunction photodetectors with micro-nano light-trapping substrates in the field of near-infrared photodetection compared to other silicon-based photodetectors.

Formation of Highly Efficient Perovskite Solar Cells by Applying Li-Doped CuSCN Hole Conductor and Interface Treatment.

Li-doped CuSCN films of various compositions were applied as hole-transporting material (HTM) for mesoscopic perovskite solar cells (PSCs). Those films of ~60 nm thickness, spin-coated on the perovskite layer, exhibit significantly higher crystallinity and hole mobility compared with the pristine CuSCN films. Among them, 0.33% Li-doped CuSCN (Li0.33:CuSCN) shows the best performance as the HTM of mesoscopic PSC. Furthermore, by depositing a slight amount of PCPDTBT over the Li0.33:CuSCN layer, the VOC was increased to 1.075 V, resulting in an average PCE of 20.24% and 20.65% for the champion device. These PCE and VOC values are comparable to those of PSC using spiro-OMETAD (PCE: 20.61%, VOC: 1.089 V). Such a remarkable increase can be attributed to the penetration of the PCPDTBT polymer into the grain boundaries of the Li0.33:CuSCN film, and to the interface with the perovskite layer, leading to the removal of defects on the perovskite surface by paving the non-contacting parts, as well as to the tight interconnection of the Li0.33:CuSCN grains. The PSC device with Li0.33:CuSCN showed a high long-term stability similar to that with bare CuSCN, and the introduction of PCPDTBT onto the perovskite/Li0.33:CuSCN further improved device stability, exhibiting 94% of the initial PCE after 100 days.

Additive Engineering of the CuSCN Hole Transport Layer for High-Performance Perovskite Semitransparent Solar Cells.

CuSCN has been widely considered a promising candidate for low-cost and high-stable hole transport material in perovskite semitransparent solar cells (STSCs). However, the low conductivity of the solution-processed CuSCN hole transport layer (HTL) hinders the hole extraction and transport in devices, which makes it hard to achieve devices with high performance. Herein, we report a facile additive engineering approach to optimize the p conductivity of CuSCN HTLs in perovskite STSCs. The n-butylammonium iodide additive facilitates the formation of Cu2+ and generates more Cu vacancies in the CuSCN HTL. This realizes a significant enhancement of the hole concentration and p conductivity of the film. Moreover, the additive improves the solubility of the CuSCN precursor solution and results in a uniform coverage on the perovskite active layer. Therefore, the perovskite STSC with a high power conversion efficiency (PCE) of 19.24% has been achieved, which is higher than that of the spiro-OMeTAD (18.83%) and CuSCN (17.45%) counterparts. In addition, the unencapsulated CuSCN-based device retains 87.5% of the initial PCE after 20 days in the ambient atmosphere.

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors.

Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 1018 cm-3. The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at -1 V, and an external quantum efficiency of 5.14 × 102% under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.

Methylammonium Compensation Effects in MAPbI3 Perovskite Solar Cells for High-Quality Inorganic CuSCN Hole Transport Layers.

Recent studies have demonstrated that copper (I) thiocyanate (CuSCN) has huge potential as a hole extraction material (HEM) for perovskite solar cells. Here, we used CuSCN as a HEM and analyzed its relationships with a methylammonium lead iodide (MAPbI3) perovskite layer. The CuSCN dissolved in diethyl sulfide (DES) was spin-coated on the MAPbI3 layer. For high-quality and dense CuSCN layers, post-annealing was carried out at various temperatures and times. However, the unwanted dissociation of MAPbI3 to PbI2 was observed due to the post-annealing for a long time at elevated temperatures. In addition, DES, which is used as a CuSCN solvent, is a polar solvent that damages the surface of MAPbI3 perovskites and causes poor interfacial properties between the perovskite layer and HEM. To solve this problem, the effect of the molar ratio of methylammonium iodide (MAI) and PbI2 in the MAPbI3 precursor solution was investigated. The excess MAI molar ratio in the MAPbI3 precursor solution reduced MAPbI3 surface damage despite using DES polar solvent for CuSCN solution. In addition, dissociation of MAPbI3 to PbI2 following an adequate post-annealing process was well suppressed. The excess MAI molar ratio in the MAPbI3 precursor could be compensated for the MA loss and effectively suppress phase separation from MAPbI3 to MAI + PbI2 during post-annealing. The efficiency based on the normal planar structure of CuSCN/MAPbI3 (using excess MAI)/TiO2 was approximately 17%. The CuSCN-based MAPbI3 device shows more optimized stability than the conventional spiro-OMeTAD under damp heat (85 °C and 85% relative humidity) conditions because of the robust inorganic HEM.

In Situ Raman Microdroplet Spectroelectrochemical Investigation of CuSCN Electrodeposited on Different Substrates.

Systematic in situ Raman microdroplet spectroelectrochemical (Raman-µSEC) characterization of copper (I) thiocyanate (CuSCN) prepared using electrodeposition from aqueous solution on various substrates (carbon-based, F-doped SnO2) is presented. CuSCN is a promising solid p-type inorganic semiconductor used in perovskite solar cells as a hole-transporting material. SEM characterization reveals that the CuSCN layers are homogenous with a thickness of ca. 550 nm. Raman spectra of dry CuSCN layers show that the SCN- ion is predominantly bonded in the thiocyanate resonant form to copper through its S-end (Cu-S-C≡N). The double-layer capacitance of the CuSCN layers ranges from 0.3 mF/cm2 on the boron-doped diamond to 0.8 mF/cm2 on a glass-like carbon. In situ Raman-µSEC shows that, independently of the substrate type, all Raman vibrations from CuSCN and the substrate completely vanish in the potential range from 0 to -0.3 V vs. Ag/AgCl, caused by the formation of a passivation layer. At positive potentials (+0.5 V vs. Ag/AgCl), the bands corresponding to the CuSCN vibrations change their intensities compared to those in the as-prepared, dry layers. The changes concern mainly the Cu-SCN form, showing the dependence of the related vibrations on the substrate type and thus on the local environment modifying the delocalization on the Cu-S bond.

Vacuum-Assisted Drying Process for Screen-Printable Carbon Electrodes of Perovskite Solar Cells with Enhanced Performance Based on Cuprous Thiocyanate as a Hole Transporting Layer.

Carbon-based perovskite solar cells without a hole transport layer (HTL) are considered to be highly stable and of low cost. However, the deficient interface contact and inferior hole extraction capability restrict the further improvement of the device efficiency. Introducing a hole transporting layer, such as cuprous thiocyanate (CuSCN), can enhance the hole extraction ability and improve the interface contact. However, our further studies indicated that-at a certain temperature-for carbon-based solar cells, in the CuSCN layer, the diffusion of SCN- into the perovskite film would produce more interfacial defects and aggravate nonradiative recombination, thus hindering the carrier transport. We further disclosed the reasons for performance attenuation during the thermal treatment of carbon electrodes, proposed a vacuum-assisted drying process for carbon electrodes to suppress the destructive effect, and finally, achieved an enhanced efficiency for perovskite solar cells with a CuSCN inorganic HTL and screen-printable carbon electrode. Also, the unencapsulated perovskite solar cell demonstrated over 80% efficiency retention after being stored in an ambient atmosphere (45-70% relative humidity (RH)) for over 1000 h and maintained over 85% efficiency retention for 309 h of 1-sun irradiation under a continuous nitrogen flow under open-circuit conditions.

One-step electrodeposition of CuSCN/CuI nanocomposite and its hole transport-ability in inverted planar perovskite solar cells.

The synthesis of CuSCN/CuI nanocomposite by single-step electrodeposition is developed. The surface morphology and film thickness are controlled by changing the electrochemical potential and deposition time. The mixed-phase formation of CuSCN/CuI is confirmed through x-ray diffraction and Raman spectral analysis. Nanopetal (NP) like morphology of CuSCN/CuI is observed in FESEM micrographs. Interestingly, the NPs density and thickness are increased with increasing the deposition potential and time. The device fabricated using CuSCN/CuI nanocomposite as a hole transport layer (HTL) which is grown for 2 min delivers the best photovoltaic performance. The maximum power conversion efficiency of 18.82% is observed for CuSCN/CuI NP with a density of 1153µm-2and thickness of 142 nm. The charge transfer ability of the CuSCN/CuI NP HTL is analyzed by electrochemical impedance spectroscopy. Based on the observation, moderate charge transport resistance and optimum film thickness are required for achieving maximum photovoltaic performance in perovskite solar cells (PVSCs). Thus, the developed CuSCN/CuI NP HTL is a potential candidate for PVSCs.

In situ growth of Z-scheme CuS/CuSCN heterojunction to passivate surface defects and enhance charge transport.

Copper thiocyanate (CuSCN) has been considered as a promising hole transport material (HTMs), attributing to its inherent stability, low-cost, and suitable energy levels. To make it more attractive in practical applications, the drawbacks of CuSCN in poor charge transport and serious defect recombination are bottlenecks that need to be overcome. In this work, we propose an effective strategy of in-situ decorating CuSCN with copper sulfide quantum dots (CuS QDs), a simple one-step electrochemical deposition process, to solve these issues. Compared with the pristine CuSCN, the constructed Z-Scheme heterojunction of CuS QDs/CuSCN can significantly promote charge transport and restrict recombination. In addition, the decorated CuS QDs can not only passivate defects of CuSCN, but also provide more contacting sites to facilitate hole injection when employing as HTM. As a result, the average bulk charge lifetime was improved from 0.37 ms to 0.47 ms, and the surface recombination rate constant was suppressed. We believe that the excellent performances will pave it toward practical device applications, including solar cells, photocatalysis, photoelectrochemical sensors, and light-emitting diodes.

Electronic Structure and Surface Properties of Copper Thiocyanate: A Promising Hole Transport Material for Organic Photovoltaic Cells.

Considering the significance of hexagonal copper thiocyanate (ß-CuSCN) in several optoelectronic technologies and applications, it is essential to investigate its electronic structure and surface properties. Herein, we have employed density functional theory (DFT) calculations to characterise the band structure, density of states, and the energy-dependent X-ray photoelectron (XPS) valence band spectra at variable excitation energies of ß-CuSCN. The surface properties in the absence and presence of dimethyl sulfoxide (DMSO), a solvent additive for improving perovskite solar cells' power conversion efficiency, have also been systematically characterised. ß-CuSCN is shown to be an indirect band gap material (Eg = 3.68 eV) with the valence band edge demonstrated to change from being dominated by Cu-3d at soft X-ray ionisation photon energies to Cu-3p at hard X-ray ionisation photon energies. The adsorption energy of dimethyl sulfoxide (DMSO) on the (100) and (110) ß-CuSCN surfaces is calculated at -1.12 and -0.91 eV, respectively. The presence of DMSO on the surface is shown to have a stabilisation effect, lowering the surface energy and tuning the work function of the ß-CuSCN surfaces, which is desirable for organic solar cells to achieve high power conversion efficiencies.

Hybrid Hole Extraction Layer Enabled High Efficiency in Polymer Solar Cells.

Charge extraction layers with excellent charge extraction capability are essential for achieving high photovoltaic performance in cells. In this work, a hole extraction layer (HEL) is developed by doping conductive polymer TFB into CuSCN (CuSCN:TFB(X)), which exhibits good light transparency and high affinity for the light absorber. Compared to the reference cell, the CuSCN:TFB(X) HEL-based cells show impressive enhancement owing to the increased exciton dissociation and charge extraction processes and weak recombination losses. Furthermore, matched work function, better interface contact, and appropriate domain size also contribute to the enhanced power conversion efficiency. As a consequence, the highest conversion efficiency of 15.28% is observed in a cell based on the PM6:Y6 blend film and CuSCN:TFB(1.0%) HEL, which is >16% higher than the efficiency of 13.13% in a cell with CuSCN HEL.

CuSCN as the Back Contact for Efficient ZMO/CdTe Solar Cells.

The replacement of traditional CdS with zinc magnesium oxide (ZMO) has been demonstrated as being helpful to boost power conversion efficiency of cadmium telluride (CdTe) solar cells to over 18%, due to the reduced interface recombination and parasitic light absorption by the buffer layer. However, due to the atmosphere sensitivity of ZMO film, the post treatments of ZMO/CdTe stacks, including CdCl2 treatment, back contact deposition, etc., which are critical for high-performance CdTe solar cells became crucial challenges. To realize the full potential of the ZMO buffer layer, plenty of investigations need to be accomplished. Here, copper thiocyanate (CuSCN) is demonstrated to be a suitable back-contact material with multi-advantages for ZMO/CdTe solar cells. Particularly, ammonium hydroxide as the solvent for CuSCN deposition shows no detrimental impact on the ZMO layer during the post heat treatment. The post annealing temperature as well as the thickness of CuSCN films are investigated. Finally, a champion power conversion efficiency of 16.7% is achieved with an open-circuit voltage of 0.857 V, a short-circuit current density of 26.2 mA/cm2, and a fill factor of 74.0%.

Ultrasensitive, Superhigh Signal-to-Noise Ratio, Self-Powered Solar-Blind Photodetector Based on n-Ga2O3/p-CuSCN Core-Shell Microwire Heterojunction.

Solar-blind photodetectors have captured intense attention due to their high significance in ultraviolet astronomy and biological detection. However, most of the solar-blind photodetectors have not shown extraordinary advantages in weak light signal detection because the forewarning of low-dose deep-ultraviolet radiation is so important for the human immune system. In this study, a high-performance solar-blind photodetector is constructed based on the n-Ga2O3/p-CuSCN core-shell microwire heterojunction by a simple immersion method. In comparison with the single device of the Ga2O3 and CuSCN, the heterojunction photodetector demonstrates an enhanced photoelectric performance with an ultralow dark current of 1.03 pA, high photo-to-dark current ratio of 4.14 × 104, and high rejection ratio (R254/R365) of 1.15 × 104 under a bias of 5 V. Excitingly, the heterostructure photodetector shows high sensitivity to the weak signal (1.5 µW/cm2) of deep ultraviolet and high-resolution detection to the subtle change of signal intensity (1.0 µW/cm2). Under the illumination with 254 nm light at 5 V, the photodetector shows a large responsivity of 13.3 mA/W, superb detectivity of 9.43 × 1011 Jones, and fast response speed with a rise time of 62 ms and decay time of 35 ms. Additionally, the photodetector can work without an external power supply and has specific solar-blind spectrum selectivity as well as excellent stability even through 1 month of storage. Such prominent photodetection, profited by the novel geometric construction and the built-in electric field originating from the p-n heterojunction, meets greatly well the "5S" requirements of the photodetector for practical application.

Interface Engineering to Eliminate Hysteresis of Carbon-Based Planar Heterojunction Perovskite Solar Cells via CuSCN Incorporation.

A carbon electrode with low cost and high stability exhibited competitiveness for its practical application in organic-inorganic hybrid perovskite solar cells (PSCs). Nonetheless, issues such as poor interface contact with an adjacent perovskite layer and obvious hysteresis phenomenon are bottlenecks that need to be overcome to make carbon-based PSCs (C-PSCs) more attractive in practice. Herein, we report an effective method to enhance the interfacial charge transport of C-PSCs by introducing the CuSCN material into the device. Two types of CuSCN-assisted devices were studied in this work. One was based on the deposition of an ultrathin CuSCN layer between the perovskite absorber layer and the carbon cathode (PSK/CuSCN/C), and the other was by infiltrating CuSCN solution into the carbon film (PSK/C-CuSCN) by taking advantage of the macroporous structure of the carbon. We have found that the CuSCN incorporation by both methods can effectively address the hysteretic feature in planar C-PSCs. The origin for the hysteresis evolution was unraveled by the investigation of the energy alignment and the kinetics of interfacial charge transfer and hole trap-state density. The results have shown that both types of CuSCN-containing devices showed improved interfacial charge carrier extraction, suppressed carrier recombination, reduced trap-state density, and enhanced charge transport, leading to negligible hysteresis. Furthermore, the CuSCN-incorporated C-PSCs demonstrated enhanced device stability. The power conversion efficiency remained 98 and 91% of the initial performance (13.6 and 13.4%) for PSK/CuSCN/C and PSK/C-CuSCN, respectively, after being stored under a high humidity (75-85%) environment for 10 days. The devices also demonstrated extraordinary long-term stability with a negligible performance drop after being stored in air (relative humidity: 33-35%) for 90 days.

Progress on the Synthesis and Application of CuSCN Inorganic Hole Transport Material in Perovskite Solar Cells.

P-type wide bandgap semiconductor materials such as CuI, NiO, Cu2O and CuSCN are currently undergoing intense research as viable alternative hole transport materials (HTMs) to the spiro-OMeTAD in perovskite solar cells (PSCs). Despite 23.3% efficiency of PSCs, there are still a number of issues in addition to the toxicology of Pb such as instability and high-cost of the current HTM that needs to be urgently addressed. To that end, copper thiocyanate (CuSCN) HTMs in addition to robustness have high stability, high hole mobility, and suitable energy levels as compared to spiro-OMeTAD HTM. CuSCN HTM layer use affordable materials, require short synthesis routes, require simple synthetic techniques such as spin-coating and doctor-blading, thus offer a viable way of developing cost-effective PSCs. HTMs play a vital role in PSCs as they can enhance the performance of a device by reducing charge recombination processes. In this review paper, we report on the current progress of CuSCN HTMs that have been reported to date in PSCs. CuSCN HTMs have shown enhanced stability when exposed to weather elements as the solar devices retained their initial efficiency by a greater percentage. The efficiency reported to date is greater than 20% and has a potential of increasing, as well as maintaining thermal stability.