Free-atom-like d states in single-atom alloy catalysts.

Alloying provides a means by which to tune a metal catalyst's electronic structure and thus tailor its performance; however, mean-field behaviour in metals imposes limits. To access unprecedented catalytic behaviour, materials must exhibit emergent properties that are not simply interpolations of the constituent components' properties. Here we show an emergent electronic structure in single-atom alloys, whereby weak wavefunction mixing between minority and majority elements results in a free-atom-like electronic structure on the minority element. This unusual electronic structure alters the minority element's adsorption properties such that the bonding with adsorbates resembles the bonding in molecular metal complexes. We demonstrate this phenomenon with AgCu alloys, dilute in Cu, where the Cu d states are nearly unperturbed from their free-atom state. In situ electron spectroscopy demonstrates that this unusual electronic structure persists in reaction conditions and exhibits a 0.1 eV smaller activation barrier than bulk Cu in methanol reforming. Theory predicts that several other dilute alloys exhibit this phenomenon, which offers a design approach that may lead to alloys with unprecedented catalytic properties.

The electronic structure of iridium oxide electrodes active in water splitting.

Iridium oxide based electrodes are among the most promising candidates for electrocatalyzing the oxygen evolution reaction, making it imperative to understand their chemical/electronic structure. However, the complexity of iridium oxide's electronic structure makes it particularly difficult to experimentally determine the chemical state of the active surface species. To achieve an accurate understanding of the electronic structure of iridium oxide surfaces, we have combined synchrotron-based X-ray photoemission and absorption spectroscopies with ab initio calculations. Our investigation reveals a pre-edge feature in the O K-edge of highly catalytically active X-ray amorphous iridium oxides that we have identified as O 2p hole states forming in conjunction with Ir(III). These electronic defects in the near-surface region of the anionic and cationic framework are likely critical for the enhanced activity of amorphous iridium oxides relative to their crystalline counterparts.

The oxidation of copper catalysts during ethylene epoxidation.

The oxidation of copper catalysts during ethylene epoxidation was characterized using in situ photoemission spectroscopy and electron microscopy. Gas chromatography, proton-transfer reaction mass spectrometry and electron-ionization mass spectrometry were used to characterize the catalytic properties of the oxidized copper. We find that copper corrodes during epoxidation in a 1 : 1 mixture of oxygen and ethylene. The catalyst corrosion passes through several stages, beginning with the formation of an O-terminated surface, followed by the formation of Cu2O scale and eventually a CuO scale. The oxidized catalyst exhibits measurable activity for ethylene epoxidation, but with a low selectivity of <3%. Tests on pure Cu2O and CuO powders confirm that the oxides intrinsically exhibit partial-oxidation activity. Cu2O was found to form acetaldehyde and ethylene epoxide in roughly equal amounts (1.0% and 1.2% respectively), while CuO was found to form much less ethyl aldehyde than ethylene epoxide (0.1% and 1.0%, respectively). Metallic copper catalysts were examined in extreme dilute-O2 epoxidation conditions to try and keep the catalyst from oxidizing during the reaction. It was found that in feed of 1 part O2 to 2500 parts C2H4 (PO2 = 1.2 × 10(-4) mbar) the copper surface becomes O-terminated. The O-terminated surface was found to exhibit partial-oxidation selectivity similar to that of Cu2O. With increasing O2 concentration (>8/2500) Cu2O forms and eventually covers the surface.

Note: binding energy scale calibration of electron spectrometers for photoelectron spectroscopy using a single sample.

The feasibility of calibrating the binding energy scale for photoelectron spectroscopy using a single sample without sputter cleaning was investigated. By measuring the Fermi level of a Au film with both monochromatic Al Kα (hν = 1486.7 eV) and He Iα (hν = 21.22 eV), the binding energy scale was simply and accurately calibrated. This method is found to yield binding energy values for the Cu 2p(3/2), Ag 3d(5/2), and Au 4f(7/2) peaks that agree with the standard tabulated values defined in International Organization for Standardization 15472 to within ±0.02 eV.

Chlorinated indium tin oxide electrodes with high work function for organic device compatibility.

In organic light-emitting diodes (OLEDs), a stack of multiple organic layers facilitates charge flow from the low work function [~4.7 electron volts (eV)] of the transparent electrode (tin-doped indium oxide, ITO) to the deep energy levels (~6 eV) of the active light-emitting organic materials. We demonstrate a chlorinated ITO transparent electrode with a work function of >6.1 eV that provides a direct match to the energy levels of the active light-emitting materials in state-of-the art OLEDs. A highly simplified green OLED with a maximum external quantum efficiency (EQE) of 54% and power efficiency of 230 lumens per watt using outcoupling enhancement was demonstrated, as were EQE of 50% and power efficiency of 110 lumens per watt at 10,000 candelas per square meter.

The impact of the Fermi-Dirac distribution on charge injection at metal/organic interfaces.

The Fermi level has historically been assumed to be the only energy-level from which carriers are injected at metal/semiconductor interfaces. In traditional semiconductor device physics, this approximation is reasonable as the thermal distribution of delocalized states in the semiconductor tends to dominate device characteristics. However, in the case of organic semiconductors the weak intermolecular interactions results in highly localized electronic states, such that the thermal distribution of carriers in the metal may also influence device characteristics. In this work we demonstrate that the Fermi-Dirac distribution of carriers in the metal has a much more significant impact on charge injection at metal/organic interfaces than has previously been assumed. An injection model which includes the effect of the Fermi-Dirac electron distribution was proposed. This model has been tested against experimental data and was found to provide a better physical description of charge injection. This finding indicates that the thermal distribution of electronic states in the metal should, in general, be considered in the study of metal/organic interfaces.

Experimental design for the determination of the injection barrier height at metal/organic interfaces using temperature dependent current-voltage measurements.

Determination of the injection barrier height for holes or electrons at metal/organic interfaces is essential to understanding the device physics of organic electronics. Due to the disordered molecular packing of organic semiconductors, careful consideration is required in the design of both the device structure and the experimental measurement technique used to extract the barrier height. We report a methodology for extracting the injection barrier height at metal/organic interfaces from temperature dependent current-voltage measurements. This methodology includes the design of single carrier devices with specific consideration of the intrinsic properties of organic semiconductors, as well as the design of a variable temperature cryostat suited to the measurement of organic electronic device architectures. Experimental results for single carrier hole-only devices using two commonly studied hole transport materials, namely N,N(')-diphenyl-N,N(')-bis-(1-naphthyl)-1-1(')-biphenyl-4,4(')-diamine (alpha-NPD) and 4,4('),4(")-tris(N-3- methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA) are also presented as examples.

Transfer-arm evaporator cell for rapid loading and deposition of organic thin films.

Described herein is a transfer-arm evaporator cell (TAE-cell), which allows for rapid loading of materials into vacuum for low-temperature sublimation deposition of thin films. This design can be incorporated with an existing analysis system for convenient in situ thin film characterization. This evaporator is especially well suited for photoemission characterization of organic semiconductor interfaces. Photoemission is one of the most important techniques for characterizing such, however, it generally requires in situ sample preparation. The ease with which materials can be loaded and evaporated with this design increases the throughput of in situ photoemission characterization, and broadens the research scope of the technique. Here, we describe the design, operation, and performance of the TAE-cell.