Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

Slot waveguide ring resonators coated by an atomic layer deposited organic/inorganic nanolaminate.

In this study, slot waveguide ring resonators patterned on a silicon-on-insulator (SOI) wafer and coated with an atomic layer deposited nanolaminate consisting of alternating layers of tantalum pentoxide and polyimide were fabricated and characterized. To the best of our knowledge, this is the first demonstration of atomic layer deposition (ALD) of organic materials in waveguiding applications. In our nanolaminate ring resonators, the optical power is not only confined in the narrow central air slot but also in several parallel sub-10 nm wide vertical polyimide slots. This indicates that the mode profiles in the silicon slot waveguide can be accurately tuned by the ALD method. Our results show that ALD of organic and inorganic materials can be combined with conventional silicon waveguide fabrication techniques to create slot waveguide ring resonators with varying mode profiles. This can potentially open new possibilities for various photonic applications, such as optical sensing and all-optical signal processing.

Towards broad-bandwidth polarization-independent nanostrip waveguide ring resonators.

We demonstrate a new method for accessing the broad-bandwidth polarization-independent operation of a microring resonator based on the standard photonic nanostrip waveguides. The method employs the selective application of atomic layer deposition to form highly uniform TiO(2) overlayers with the specific dispersion properties. The wide operation window is achieved by matching the wavelength dependencies of the free spectral ranges of the two orthogonal polarizations.

Thermo-optical tunable planar ridge microdisk resonator in silicon-on-insulator.

In this work, we design and demonstrate planar ridge microdisk resonators in silicon-on-insulator, which assemble the advantages of microring and microdisk resonators. The dependences of resonator optical modes on the slab thickness and the waveguide-to-resonator coupling gap are investigated. The highest Q-factor obtained is ~4 × 10(5). Using the thermo-optical effect, we attain a resonance wavelength tuning efficiency of ~66.5 pm/mW. We also compare the transmission spectra measured by using wavelength-scanning method and voltage-scanning method and show potential application for the adopted voltage-scanning method.

Silicon-based horizontal nanoplasmonic slot waveguides for on-chip integration.

Horizontal metal/insulator/Si/insulator/metal nanoplasmonic slot waveguide (PWG), which is inserted in a conventional Si wire waveguide, is fabricated using the standard Si-CMOS technology. A thin insulator between the metal and the Si core plays a key role: it not only increases the propagation distance as the theoretical prediction, but also prevents metal diffusion and/or metal-Si reaction. Cu-PWGs with the Si core width of ~134-21 nm and ~12-nm-thick SiO2 on each side exhibit a relatively low propagation loss of ~0.37-0.63 dB/µm around the telecommunication wavelength of 1550 nm, which is ~2.6 times smaller than the Al-counterparts. A simple tapered coupler can provide an effective coupling between the PWG and the conventional Si wire waveguide. The coupling efficiency as high as ~0.1-0.4 dB per facet is measured. The PWG allows a sharp bending. The pure bending loss of a Cu-PWG direct 90° bend is measured to be ~0.6-1.0 dB. These results indicate the potential for seamless integration of various functional nanoplasmonic devices in existing Si electronic photonic integrated circuits (Si-EPICs).

Low-loss silicon slot waveguides and couplers fabricated with optical lithography and atomic layer deposition.

We demonstrate low-loss silicon slot waveguides patterned with 248 nm deep-UV lithography and filled with atomic layer deposited aluminum oxide. Propagation losses less than 5 dB/cm are achieved with the waveguides. The devices are fabricated using low-temperature CMOS compatible processes. We also demonstrate simple, compact and efficient strip-to-slot waveguide couplers. With a coupler as short as 10 µm, coupling loss is less than 0.15 dB. The low-index and low-nonlinearity filling material allows nonlinearities nearly two orders of magnitude smaller than in silicon waveguides. Therefore, these waveguides are a good candidate for linear photonic devices on the silicon platform, and for distortion-free signal transmission channels between different parts of a silicon all-optical chip. The low-nonlinearity slot waveguides and robust couplers also facilitate a 50-fold local change of the waveguide nonlinearity within the chip by a simple mask design.

Effective thermo-optical enhanced cross-ring resonator MZI interleavers on SOI.

A cross-ring (CR-) Mach-Zehnder interferometer (MZI) interleaver structure has been proposed and fabricated. It uses an '8' shaped cross-ring resonator to replace the conventional circular ring resonator. Thus, the new structure can have the function of add-signal. Furthermore, a thermo-optical fine tuning has been applied, which improves the crosstalk performance from approximately -10 dB to approximately -20 dB with 9 V applied on the heater of the 3-dB directional coupler.

Fast and low power Michelson interferometer thermo-optical switch on SOI.

We designed and fabricated silicon-on-insulator based Michelson interferometer (MI) thermo-optical switches with deep etched trenches for heat-isolation. Switch power was reduced approximately 20% for the switch with deep etched trenches, and the MI saved approximately 50% power than that of the Mach-Zehnder interferometer. 10.6 mW switch power, approximately 42 micros switch time for the MI with deep trenches, 13.14 mW switch power and approximately 34 micros switch time for the MI without deep trenches were achieved.