Lifetime and Molecular Coupling in Surface Phonon Polariton Resonators.

Surface phonon polariton (SPhP) modes in polar semiconductors offer a low-loss platform for infrared nanophotonics and sensing. However, the efficient design of polariton-enhanced sensors requires a quantitative understanding of how to engineer the frequency and lifetime of SPhPs in nanophotonic structures. Here, we study organ-pipe resonances in 4H-SiC trenches as a prototype system for infrared sensing. We use a transmission line framework that accounts for the field distribution within the trench, accurately predicting mode frequency and lifetime when compared against finite element method (FEM) electromagnetic calculations. Accounting for the electric field profile across the gap is critical in our model to accurately predict mode frequencies, quality factor (Q factor), and reflectance, outperforming previous circuit models developed in the literature. Beyond structural simulation, our model can provide insights into the frequency ranges in the Reststrahlen band where enhanced sensor activity should be present. The radiative lifetime is significantly enlarged close to the longitudinal optic phonon, restricting sensor efficiency at this wavelength range. This pushes the optimal frequency for sensing closer to the center of the Reststrahlen band than might be naively expected. This model ultimately demonstrates the primary challenge of designing SPhP-based sensors: only a relatively narrow region of the Reststrahlen band offers efficient sensing, guiding future designs for infrared spectroscopy.

Toward gallium oxide power electronics.

Ultrawide-bandgap semiconductors show promise for high-power transistors.

Collective Phonon-Polaritonic Modes in Silicon Carbide Subarrays.

Localized surface phonon polaritons (LSPhPs) can be implemented to engineer light-matter interactions through nanoscale patterning for a range of midinfrared application spaces. However, the polar material systems studied to date have mainly focused on simple designs featuring a single element in the periodic unit cell. Increasing the complexity of the unit cell can serve to modify the resonant near-fields and intra- and inter-unit-cell coupling as well as to dictate spectral tuning in the far-field. In this work, we exploit more complicated unit-cell structures to realize LSPhP modes with additional degrees of design freedom, which are largely unexplored. Collectively excited LSPhP modes with distinctly symmetric and antisymmetric near-fields are supported in these subarray designs, which are based on nanopillars that are scaled by the number of subarray elements to ensure a constant unit-cell size. Moreover, we observe an anomalous mode-matching of the collective symmetric mode in our fabricated subarrays that is robust to changing numbers of pillars within the subarrays as well as to defects intentionally introduced in the form of missing pillars. This work therefore illustrates the hierarchical design of tailored LSPhP resonances and modal near-field profiles simultaneously for a variety of IR applications such as surface-enhanced spectroscopies and biochemical sensing.

Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications.

The development of high thermal conductivity thin film materials for the thermal management of electronics requires accurate and precise methods for characterizing heat spreading capability, namely, in-plane thermal conductivity. However, due to the complex nature of thin film thermal property measurements, resolving the in-plane thermal conductivity of high thermal conductivity anisotropic thin films with high accuracy is particularly challenging. Capable transient techniques exist; however, they usually measure thermal diffusivity and require heat capacity and density to deduce thermal conductivity. Here, we present an explicit uncertainty analysis framework for accurately resolving in-plane thermal conductivity via two independent steady-state thermometry techniques: particle-assisted Raman thermometry and electrical resistance thermometry. Additionally, we establish error-based criteria to determine the limiting experimental conditions that permit the simplifying assumption of one-dimensional thermal conduction to further reduce thermal analysis. We demonstrate the accuracy and precision (<5% uncertainty) of both steady-state techniques through in-plane thermal conductivity measurements of anisotropic nanocrystalline diamond thin films.

Engineering the Spectral and Spatial Dispersion of Thermal Emission via Polariton-Phonon Strong Coupling.

Strong coupling between optical modes can be implemented into nanophotonic design to modify the energy-momentum dispersion relation. This approach offers potential avenues for tuning the thermal emission frequency, line width, polarization, and spatial coherence. Here, we employ three-mode strong coupling between propagating and localized surface phonon polaritons, with zone-folded longitudinal optic phonons within periodic arrays of 4H-SiC nanopillars. Energy exchange, mode evolution, and coupling strength between the three polariton branches are explored experimentally and theoretically. The influence of strong coupling upon the angle-dependent thermal emission was directly measured, providing excellent agreement with theory. We demonstrate a 5-fold improvement in the spatial coherence and 3-fold enhancement of the quality factor of the polaritonic modes, with these hybrid modes also exhibiting a mixed character that could enable opportunities to realize electrically driven emission. Our results show that polariton-phonon strong coupling enables thermal emitters, which meet the requirements for a host of IR applications in a simple, lightweight, narrow-band, and yet bright emitter.

Band Alignment of ScxAl1-xN/GaN Heterojunctions.

ScAlN is an emergent ultrawide-band-gap material with both a high piezoresponse and demonstrated ferroelectric polarization switching. Recent demonstration of epitaxial growth of ScAlN on GaN has unlocked prospects for new high-power transistors and nonvolatile memory technologies fabricated from these materials. An understanding of the band alignments between ScAlN and GaN is crucial in order to control the electronic and optical properties of engineered devices. To date, there have been no experimental studies of the band offsets between ScAlN and GaN. This work presents optical characterization of the band gap of molecular beam epitaxy grown ScxAl1-xN using spectroscopic ellipsometry and measurements of the band offsets of ScxAl1-xN with GaN using X-ray photoemission spectroscopy, along with a comparison to first-principles calculations. The band gap is shown to continuously decrease as a function of increasing ScN alloy fraction with a negative bowing parameter. Furthermore, a crossover from straddling (type-I) to staggered (type-II) band offsets is demonstrated as Sc composition increases beyond approximately x = 0.11. These results show that the ScAlN/GaN valence band alignment can be tuned by changing the Sc alloy fraction, which can help guide the design of heterostructures in future ScAlN/GaN-based devices.

Narrowband Polaritonic Thermal Emitters Driven by Waste Heat.

There are a broad range of applications for narrowband long-wave infrared (LWIR) sources, especially within the 8-12 µm atmospheric window. These include infrared beacons, free-space communications, spectroscopy, and potentially on-chip photonics. Unfortunately, commercial light-emitting diode (LED) sources are not available within the LWIR, leaving only gas-phase and quantum cascade lasers, which exhibit low wall-plug efficiencies and in many cases require large footprints, precluding their use for many applications. Recent advances in nanophotonics have demonstrated the potential for tailoring thermal emission into an LED-like response, featuring narrowband, polarized thermal emitters. In this work, we demonstrate that such nanophotonic IR emitting metamaterials (NIREMs), featuring near-unity absorption, can serve as LWIR sources with effectively no net power consumption, enabling their operation entirely by waste heat from conventional electronics. Using experimental emissivity spectra from a SiC NIREM device in concert with a thermodynamic compact model, we verify this feasibility for two test cases: a NIREM device driven by waste heat from a CPU heat sink and one operating using a low-power resistive heater for elevated temperature operation. To validate these calculations, we experimentally determine the temperature-dependent NIREM irradiance and the angular radiation pattern. We purport that these results provide a first proof-of-concept for waste heat-driven thermal emitters potentially employable in a variety of infrared application spaces.

Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy.

The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at the interface between dissimilar materials. However, controlling and tuning heat transport across an interface and in the adjacent materials has so far drawn limited attention. In this work, we grow chemical vapor-deposited diamond on silicon substrates by graphoepitaxy and experimentally demonstrate tunable thermal transport across diamond membranes and diamond-silicon interfaces. We observed the highest diamond-silicon thermal boundary conductance (TBC) measured to date and increased diamond thermal conductivity due to strong grain texturing in the diamond near the interface. Additionally, nonequilibrium molecular dynamics simulations and a Landauer approach are used to understand the diamond-silicon TBC. These findings pave the way for tuning or increasing thermal conductance in heterogeneously integrated electronics that involve polycrystalline materials and will impact applications including electronics thermal management and diamond growth.

Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics.

Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode ß-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of ∼105 were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and ß-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent IDS- VDS output as well as IDS- VGS transfer characteristics with a high on/off ratio (∼108) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.

Quasi-Two-Dimensional h-BN/ß-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

ß-gallium oxide (ß-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of ß-Ga2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between ß-Ga2O3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.

Technique for the dry transfer of epitaxial graphene onto arbitrary substrates.

To make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape. Subsequent Hall effect measurements illustrated that minimal degradation in the carrier mobility was induced following the transfer process in lithographically patterned devices. Correspondingly, a large drop in the carrier concentration was observed following the transfer process, supporting the notion that a gradient in the carrier density is present in C-face EG, with lower values being observed in layers further removed from the SiC interface. X-ray photoemission spectra collected from EG films attached to the transfer tape revealed the presence of atomic Si within the EG layers, which may indicate the identity of the unknown intrinsic dopant in EG. Finally, this transfer process is shown to enable EG films amenable for use in device fabrication on arbitrary substrates and films that are deemed most beneficial to carrier transport, as flexible electronic devices or optically transparent contacts.