RESUMEN
Polariton canalization is characterized by intrinsic collimation of energy flow along a single crystalline axis. This optical phenomenon has been experimentally demonstrated at the nanoscale by stacking and twisting van der Waals (vdW) layers of α-MoO3, by combining α-MoO3 and graphene, or by fabricating an h-BN metasurface. However, these material platforms have significant drawbacks, such as complex fabrication and high optical losses in the case of metasurfaces. Ideally, it would be possible to canalize polaritons "naturally" in a single pristine layer. Here, we theoretically predict and experimentally demonstrate naturally canalized phonon polaritons (PhPs) in a single thin layer of the vdW crystal LiV2O5. In addition to canalization, PhPs in LiV2O5 exhibit strong field confinement ( λ p ~ λ 0 27 ), slow group velocity (0.0015c), and ultra-low losses (lifetimes of 2 ps). Our findings are promising for the implementation of low-loss optical nanodevices where strongly directional light propagation is needed, such as waveguides or optical routers.
RESUMEN
The development of broadband and ultracompact optoelectronic devices relies on the possibility of fabricating bright and tunable emitters at the nanoscale. Here, we show emission from EuO x (1 ≤ x < 1.4) thin films on silicon formed by nanocrystals with average sizes in the range of 5 nm. The photoluminescence emission of the nano-EuO x films is tunable as a function of the oxygen concentration changing from a green broadband Eu2+-related emission to a narrow red Eu3+-related emission. To reach these results has been instrumental through the use of a new methodology specially designed to achieve high-quality europium oxide films whose compositional properties are controlled by the growth base pressure and preserved thanks to a chemically stable and transparent cover layer of Al2O3. Our findings confirm the outstanding potential of nanostructured EuO x films as "one-compound" optical elements with tunable emission properties for their implementation in integrated silicon-based devices.
RESUMEN
Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop AlxGa1-xN:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mgk complexes optically active in the near-infrared range of wavelengths.