Direct-write orientation of charge-transfer liquid crystals enables polarization-based coding and encryption.

Optical polarizers encompass a class of anisotropic materials that pass-through discrete orientations of light and are found in wide-ranging technologies, from windows and glasses to cameras, digital displays and photonic devices. The wire-grids, ordered surfaces, and aligned nanomaterials used to make polarized films cannot be easily reconfigured once aligned, limiting their use to stationary cross-polarizers in, for example, liquid crystal displays. Here we describe a supramolecular material set and patterning approach where the polarization angle in stand-alone films can be precisely defined at the single pixel level and reconfigured following initial alignment. This capability enables new routes for non-binary information storage, retrieval, and intrinsic encryption, and it suggests future technologies such as photonic chips that can be reconfigured using non-contact patterning.

Synchrotron characterization of high-Z, current-mode x-ray detectors.

Fast x-ray detectors are critical tools in pulsed power and fusion applications, where detector impulse response of a nanosecond or better is often required. Semiconductor detectors can create fast, sensitive devices with extensive operational flexibility. There is typically a trade-off between detector sensitivity and speed, but higher atomic number absorbers can increase hard x-ray absorption without increasing the charge collection time, provided carriers achieve high velocity. This paper presents x-ray pulse characterization conducted at the Advanced Photon Source of x-ray absorption efficiency and temporal impulse response of current-mode semiconductor x-ray detectors composed of Si, GaAs, and CdTe.

GaAs x-ray detectors with sub-nanosecond temporal response.

Fast semiconductor radiation detectors operated in current mode provide a valuable diagnostic in pulsed power applications. Si detectors are common due to the availability of high-quality materials and mature fabrication processes, but they offer low absorption for hard x-rays above ∼10 keV. GaAs can provide increased hard x-ray absorption for the same detector volume due to a higher atomic number. GaAs photodiodes have been produced from epitaxial material grown at Sandia National Laboratories and fabricated at Sandia's microfabrication facility. These detectors have significantly higher hard x-ray absorption (>10× at 15 keV) and nearly identical temporal impulse response to similarly sized Si detectors of 0.5 ns full-width half maximum.

Compact epsilon-near-zero silicon photonic phase modulators.

In this paper, we analyze a compact silicon photonic phase modulator at 1.55 µm using epsilon-near-zero transparent conducting oxide (TCO) films. The operating principle of the non-resonant phase modulator is field-effect carrier density modulation in a thin TCO film deposited on top of a passive silicon waveguide with a CMOS-compatible fabrication process. We compare phase modulator performance using both indium oxide (In2O3) and cadmium oxide (CdO) TCO materials. Our findings show that practical phase modulation can be achieved only when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. The CdO-based phase modulator has a figure of merit of 17.1°/dB in a compact 5 µm length. This figure of merit can be increased further through the proper selection of high-mobility TCOs, opening a path for device miniaturization and increased phase shifts.

Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators.

We demonstrate electro-optical tuning of degenerate band edge resonances in Si photonic waveguides for applications including tunable filters, low voltage switches, and modulators. Carrier injection modulation is enabled by introducing periodic Si slabs to electrically connect the resonator to P and N dopants. Measured devices yield a large DC tunability of 7.1 nm/V and a peak switching slope of 206 dB/V. Digital data transmission measurements at 100 Mb/s show 3 dB of switching with a swing voltage of 6.8 mV, 91.4 aJ/bit switching energy, and 1.08 pJ/bit holding energy.

Degenerate band edge resonances in periodic silicon ridge waveguides.

We experimentally demonstrate degenerate band edge resonances in periodic Si ridge waveguides that are compatible with carrier injection modulation for active electro-optical devices. The resonant cavities are designed using a combination of the plane-wave expansion method and the finite difference time domain technique. Measured and simulated quality factors of the first band edge resonances scale to the fifth power of the number of periods. Quality factor scaling is determined to be limited by fabrication imperfections. Compared to resonators based on a regular transmission band edge, degenerate band edge devices can achieve significantly larger quality factors in the same number of periods. Applications include compact electro-optical switches, modulators, and sensors that benefit from high-quality factors and large distributed electric fields.

Compensating thermal drift of hybrid silicon and lithium niobate ring resonances.

We present low-power compensation of thermal drift of resonance wavelengths in hybrid silicon and lithium niobate ring resonators based on the linear electro-optic effect. Fabricated devices demonstrate a resonance wavelength tunability of 12.5 pm/V and a tuning range of 1 nm. A capacitive geometry and low thermal sensitivity result in the compensation of 17°C of temperature variation using tuning powers at sub-nanowatt levels. The method establishes a route for stabilizing high-quality factor resonators in chip-scale integrated photonics subject to temperature variations.

Electrically tunable optical polarization rotation on a silicon chip using Berry's phase.

The continued convergence of electronics and photonics on the chip scale can benefit from the voltage control of optical polarization for applications in communications, signal processing and sensing. It is challenging, however, to electrically manipulate the polarization state of light in planar optical waveguides. Here we introduce out-of-plane optical waveguides, allowing access to Berry's phase, a quantum-mechanical phenomenon of purely topological origin. As a result, electrically tunable optical polarization rotation on the chip scale is achieved. Devices fabricated in the silicon-on-insulator material platform are not limited to a single static polarization state. Rather, they can exhibit dynamic tuning of polarization from the fundamental transverse electric mode to the fundamental transverse magnetic mode. Electrical tuning of optical polarization over a 19 dB range of polarization extinction ratio is demonstrated with less than 1 dB of conversion loss at infrared wavelengths. Compact system architectures involving dynamic control of optical polarization in integrated circuits are envisioned.

12.5 pm/V hybrid silicon and lithium niobate optical microring resonator with integrated electrodes.

We present a silicon microring resonator with a lithium niobate top cladding and integrated tuning electrodes. Submicrometer thin films of z-cut lithium niobate are bonded to silicon microring resonators via benzocyclobutene. Integrated electrodes are incorporated to confine voltage controlled electric fields within the lithium niobate thin film. The electrode design utilizes thin film metal electrodes and an optically transparent electrode wherein the silicon waveguide core serves as both an optical waveguide medium and as a conductive electrode medium. The hybrid material system combines the electro-optic functionality of lithium niobate with the high index contrast of silicon waveguides, enabling compact low tuning voltage microring resonators. Optical characterization of fabricated devices results in a measured loaded quality factor of 11,500 and a free spectral range of 7.15 nm in the infrared. The demonstrated tunability is 12.5 pm/V, which is over an order of magnitude greater than electrode-free designs.

Conjunctival marginal zone b-cell lymphoma in a 13-year-old child.

Ocular adnexal lymphoma is a hematopoietic tumor that arises in the conjunctiva, orbit, eyelid, lacrimal gland, or lacrimal sac. The treatment options in children have not been addressed in the literature. The authors describe a 13-year-old child with ocular adnexal lymphoma and discuss the treatment options.

Septo-optic dysplasia with bilateral congenital corneal anesthesia.

Septo-optic dysplasia, or de Morsier syndrome, is characterized by optic nerve hypoplasia with an absent septum pellucidum and/or pituitary abnormalities. Congenital corneal anesthesia is a rare disorder that has been associated with many neurological disorders. Here we present a patient with both conditions who was successfully treated with permanent lateral tarsorrhaphy and aggressive lubrication. To our knowledge, congenital corneal anesthesia has not been reported in association with septo-optic dysplasia. The purpose of this report is to make pediatric ophthalmologists aware of a potential association since the diagnosis of congenital corneal anesthesia is often difficult and delayed.

Apnea and bradycardia in two premature infants during routine outpatient retinopathy of prematurity screening.

Two unrelated premature infants at risk for retinopathy of prematurity (ROP) were discharged home from a neonatal intensive care unit. Appropriately timed ROP examinations were performed in an outpatient setting in a free-standing pediatric ophthalmologist's private office remote from any hospital. The infants developed severe apnea and bradycardia at the end of the ROP examinations. As a result, a new protocol for outpatient ROP screening was developed.