In Situ Electropolymerizing Toward EP-CoP/Cu Tandem Catalyst for Enhanced Electrochemical CO2-to-Ethylene Conversion.

Electrochemical CO2 reduction has garnered significant interest in the conversion of sustainable energy to valuable fuels and chemicals. Cu-based bimetallic catalysts play a crucial role in enhancing *CO concentration on Cu sites for efficient C─C coupling reactions, particularly for C2 product generation. To enhance Cu's electronic structure and direct its selectivity toward C2 products, a novel strategy is proposed involving the in situ electropolymerization of a nano-thickness cobalt porphyrin polymeric network (EP-CoP) onto a copper electrode, resulting in the creation of a highly effective EP-CoP/Cu tandem catalyst. The even distribution of EP-CoP facilitates the initial reduction of CO2 to *CO intermediates, which then transition to Cu sites for efficient C─C coupling. DFT calculations confirm that the *CO enrichment from Co sites boosts *CO coverage on Cu sites, promoting C─C coupling for C2+ product formation. The EP-CoP/Cu gas diffusion electrode achieves an impressive current density of 726 mA cm-2 at -0.9 V versus reversible hydrogen electrode (RHE), with a 76.8% Faraday efficiency for total C2+ conversion and 43% for ethylene, demonstrating exceptional long-term stability in flow cells. These findings mark a significant step forward in developing a tandem catalyst system for the effective electrochemical production of ethylene.

Scanning Electrochemical Probe Lithography for Ultra-Precision Machining of Micro-Optical Elements with Freeform Curved Surface.

Two challenges should be overcome for the ultra-precision machining of micro-optical element with freeform curved surface: one is the intricate geometry, the other is the hard-to-machining optical materials due to their hardness, brittleness or flexibility. Here scanning electrochemical probe lithography (SECPL) is developed, not only to meet the machining need of intricate geometry by 3D direct writing, but also to overcome the above mentioned mechanical properties by an electrochemical material removal mode. Through the electrochemical probe a localized anodic voltage is applied to drive the localized corrosion of GaAs. The material removal rate is obtained as a function of applied voltage, motion rate, scan segment, etc. Based on the material removal function, an arbitrary geometry can be converted to a spatially distributed voltage. Thus, a series of micro-optical element are fabricated with a machining accuracy in the scale of 100 s of nanometers. Notably, the spiral phase plate shows an excellent performance to transfer parallel light to vortex beam. SECPL demonstrates its excellent controllability and accuracy for the ultra-precision machining of micro-optical devices with freeform curved surface, providing an alternative chemical approach besides the physical and mechanical techniques.

Regulation of heterogeneous electron transfer reactivity by defect engineering through electrochemically induced brominating addition.

Enhancing the electrochemical activity of graphene holds great significance for expanding its applications in various electrochemistry fields. In this study, we have demonstrated a facile and quantitative approach for modulating the defect density of single-layer graphene (SLG) via an electrochemically induced bromination process facilitated by cyclic voltammetry. This controlled defect engineering directly impacts the heterogeneous electron transfer (HET) rate of SLG. By utilizing Raman spectroscopy and scanning electrochemical microscopy (SECM), we have established a correlation between the HET kinetics and both the defect density (nD) and mean distance between defects (LD) of SLG. The variation of the HET rate (k0) with the defect density manifested a distinctive three-stage behavior. Initially, k0 increased slightly with the increasing nD, and then it experienced a rapid increase as nD further increased. However, once the defect density surpassed a critical value of about 1.8 × 1012 cm-2 (LD < 4.2 nm), k0 decreased rapidly. Notably, the results revealed a remarkable 35-fold enhancement of k0 under the optimal defect density conditions compared to pristine SLG. This research paves the way for controllable defect engineering as a powerful strategy to enhance the electrochemical activity of graphene, opening up new possibilities for its utilization in a wide range of electrochemical applications.

Angstrom-Scale Electrochemistry at Electrodes with Dimensions Commensurable and Smaller than Individual Reacting Species.

In nature and technologies, many chemical reactions occur at interfaces with dimensions approaching that of a single reacting species in nano- and angstrom-scale. Mechanisms governing reactions at this ultimately small spatial regime remain poorly explored because of challenges to controllably fabricate required devices and assess their performance in experiment. Here we report how efficiency of electrochemical reactions evolves for electrodes that range from just one atom in thickness to sizes comparable with and exceeding hydration diameters of reactant species. The electrodes are made by encapsulating graphene and its multilayers within insulating crystals so that only graphene edges remain exposed and partake in reactions. We find that limiting current densities characterizing electrochemical reactions exhibit a pronounced size effect if reactant's hydration diameter becomes commensurable with electrodes' thickness. An unexpected blockade effect is further revealed from electrodes smaller than reactants, where incoming reactants are blocked by those adsorbed temporarily at the atomically narrow interfaces. The demonstrated angstrom-scale electrochemistry offers a venue for studies of interfacial behaviors at the true molecular scale.

Ultrasonic-Assisted Electrochemical Nanoimprint Lithography: Forcing Mass Transfer to Enhance the Localized Etching Rate of GaAs.

Electrochemical nanoimprint lithography (ECNL) has emerged as a promising technique for fabricating three-dimensional micro/nano-structures (3D-MNSs) directly on semiconductor wafers. This technique is based on a localized corrosion reaction induced by the contact potential across the metal/semiconductor boundaries. The anodic etching of semiconductor and the cathodic reduction of electron acceptors occur at the metal/semiconductor/electrolyte interface and the Pt mold surface, respectively. However, the etching rate is limited by the mass transfer of species in the ultrathin electrolyte layer between the mold and the workpiece. To overcome this challenge, we introduce the ultrasonics effect into the ECNL process to facilitate the mass exchange between the ultrathin electrolyte layer and the bulk solution, thereby improving the imprinting efficiency. Experimental investigations demonstrate a positive linear relationship between the reciprocal of the area duty ratio of the mold and the imprinting efficiency. Furthermore, the introduction of ultrasonics improves the imprinting efficiency by approximately 80 %, irrespective of the area duty ratio. The enhanced imprinting efficiency enables the fabrication of 3D-MNSs with higher aspect ratios, resulting in a stronger light trapping effect. These results indicate the prospective applications of ECNL in semiconductor functional devices, such as photoelectric detection and photovoltaics.

In situ Electropolymerized 3D Microporous Cobalt-Porphyrin Nanofilm for Highly Effective Molecular Electrocatalytic Reduction of Carbon Dioxide.

Electrocatalytic CO2 reduction reaction (CO2 RR) based on molecular catalysts, for example, cobalt porphyrin, is promising to enhance the carbon cycle and mitigate current climate crisis. However, the electrocatalytic performance and accurate evaluations remain problems because of either the low loading amount or the low utilization rate of the electroactive CoN4 sites. Herein a monomer is synthesized, cobalt(II)-5,10,15,20-tetrakis(3,5-di(thiophen-2-yl)phenyl)porphyrin (CoP), electropolymerized onto carbon nanotubes (CNTs) networks, affording a molecular electrocatalyst of 3D microporous nanofilm (EP-CoP, 2-3 nm thickness) with highly dispersed CoN4 sites. The new electrocatalyst shortens the electron transfer pathway, accelerates the redox kinetics of CoN4 sites, and improves the durability of the electrocatalytic CO2 RR. From the intrinsic redox behavior of CoN4 sites, the effective utilization rate is obtained as 13.1%, much higher than that of the monomer assembled electrode (5.8%), and the durability is also promoted dramatically (>40 h) in H-type cells. In commercial flow cells, EP-CoP can achieve a faradic efficiency for CO (FECO ) over 92% at an overpotential of 160 mV. At a higher overpotential of 620 mV, the working current density can reach 310 mA cm-2 with a high FECO of 98.6%, representing the best performance for electrodeposited molecular porphyrin electrocatalysts.

Advanced Ag nanoparticles for the catalyzation of glyoxylic acid oxidation in through-holes electroless copper metallization.

Advanced Ag nanoparticles (Ag NPs) were prepared by wet chemical oxidation-reduction method, using mainly the tannic acid as reducing agent and carboxymethylcellulose sodium as stabilizer. The prepared Ag NPs uniformly disperse and are stable for more than one month without agglomeration. The studies of transmission electron microscopy (TEM) and ultraviolet-visible (UV-vis) absorption spectroscopy indicate that the Ag NPs are in homogeneous sphere with only 4.4 nm average size and narrow particle size distribution. Electrochemical measurements reveal that the Ag NPs behave excellent catalytic activity for electroless copper plating using glyoxylic acid as reducing agent. In situ fourier transform infrared (in situ FTIR) spectroscopic analysis combined with density functional theory (DFT) calculation illustrate that the molecular oxidation of glyoxylic acid catalyzed by Ag NPs is as the following routes: glyoxylic acid molecule first is adsorbed on Ag atoms with carboxyl oxygen terminal, then hydrolyzed to diol anionic intermediate, and last oxidized to oxalic acid. Time-resolved in situ FTIR spectroscopy further reveals the real-time reactions of electroless copper plating as follows: glyoxylic acid is continuously oxidized to oxalic acid and releases electrons at the active catalyzing spots of Ag NPs, and Cu(II) coordination ions are in situ reduced by the electrons. Based on the excellent catalytic activity, the advanced Ag NPs can replace the expensive Pd colloids catalyst and successfully apply in through-holes metallization of printed circuit board (PCB) by electroless copper plating.

Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor.

As a semimetal with a zero band gap and single-atom-scale thickness, single layer graphene (SLG) has excellent electron conductivity on its basal plane. If the band gap could be opened and regulated controllably, SLG would behave as a semiconductor. That means electronic elements or even electronic circuits with single-atom thickness could be expected to be printed on a wafer-scale SLG substrate, which would bring about a revolution in Moore's law of integrated circuits, not by decreasing the feature size of line width, but by piling up the atomic-scale-thickness of an SLG circuit board layer by layer. Employing scanning electrochemical microscopy (SECM), we have demonstrated that the electrochemically induced brominating addition reaction can open and regulate the band gap of SLG by forming SLG bromide (SLGBr). The SLG/SLGBr/SLG Schottky junction shows excellent performance in current rectification, and the rectification potential region can be regulated by tuning the degree of bromination of SLG. This work provides a feasible and effective way to regulate the band gap of SLG, which would open new applications for SLG in micro-nano electronics and ultra-large-scale integrated circuits (ULSI).

Dynamically Interfacial pH-Buffering Effect Enabled by N-Methylimidazole Molecules as Spontaneous Proton Pumps toward Highly Reversible Zinc-Metal Anodes.

Aqueous zinc-metal batteries have attracted extensive attention due to their outstanding merits of high safety and low cost. However, the intrinsic thermodynamic instability of zinc in aqueous electrolyte inevitably results in hydrogen evolution, and the consequent generation of OH- at the interface will dramatically exacerbate the formation of dead zinc and dendrites. Herein, a dynamically interfacial pH-buffering strategy implemented by N-methylimidazole (NMI) additive is proposed to remove the detrimental OH- at zinc/electrolyte interface in real-time, thus eliminating the accumulation of by-products fundamentally. Electrochemical quartz crystal microbalance and molecular dynamics simulation results reveal the existence of an interfacial absorption layer assembled by NMI and protonated NMI (NMIH+ ), which acts as an ion pump for replenishing the interface with protons constantly. Moreover, an in situ interfacial pH detection method with micro-sized spatial resolution based on the ultra-microelectrode technology is developed to probe the pH evolution in diffusion layer, confirming the stabilized interfacial chemical environment in NMI-containing electrolyte. Accordingly, with the existence of NMI, an excellent cumulative plating capacity of 4.2 Ah cm-2 and ultrahigh Coulombic efficiency of 99.74% are realized for zinc electrodes. Meanwhile, the NMI/NMIH+ buffer additive can accelerate the dissolution/deposition process of MnO2 /Mn2+ on the cathode, leading to enhanced cycling capacity.

Mechanism of Cations Suppressing Proton Diffusion Kinetics for Electrocatalysis.

Proton transfer is crucial for electrocatalysis. Accumulating cations at electrochemical interfaces can alter the proton transfer rate and then tune electrocatalytic performance. However, the mechanism for regulating proton transfer remains ambiguous. Here, we quantify the cation effect on proton diffusion in solution by hydrogen evolution on microelectrodes, revealing the rate can be suppressed by more than 10 times. Different from the prevalent opinions that proton transport is slowed down by modified electric field, we found water structure imposes a more evident effect on kinetics. FTIR test and path integral molecular dynamics simulation indicate that proton prefers to wander within the hydration shell of cations rather than to hop rapidly along water wires. Low connectivity of water networks disrupted by cations corrupts the fast-moving path in bulk water. This study highlights the promising way for regulating proton kinetics via a modified water structure.

Electrochemical Enzyme Sensor Based on the Two-Dimensional Metal-Organic Layers Supported Horseradish Peroxidase.

Metal-organic frames (MOFs) have recently been used to support redox enzymes for highly sensitive and selective chemical sensors for small biomolecules such as oxygen (O2), hydrogen peroxide (H2O2), etc. However, most MOFs are insulative and their three-dimensional (3D) porous structures hinder the electron transfer pathway between the current collector and the redox enzyme molecules. In order to facilitate electron transfer, here we adopt two-dimensional (2D) metal-organic layers (MOLs) to support the HRP molecules in the detection of H2O2. The correlation between the current response and the H2O2 concentration presents a linear range from 7.5 µM to 1500 µM with a detection limit of 0.87 µM (S/N = 3). The sensitivity, reproducibility, and stability of the enzyme sensor are promoted due to the facilitated electron transfer.

Electrochemical Storage of Atomic Hydrogen on Single Layer Graphene.

If hydrogen can be stored and carried safely at a high density, hydrogen-fuel cells offer effective solutions for vehicles. The stable chemisorption of atomic hydrogen on single layer graphene (SLG) seems a perfect solution in this regard, with a theoretical maximum storage capacity of 7.7 wt %. However, generating hydrogenated graphene from H2 requires extreme temperatures and pressures. Alternatively, hydrogen adatoms can easily be produced under mild conditions by the electroreduction of protons in solid/liquid systems. Graphene is electrochemically inert for this reaction, but H-chemisorption on SLG can be carried out under mild conditions via a novel Pt-electrocatalyzed "spillover-surface diffusion-chemisorption" mechanism, as we demonstrate using dynamic electrochemistry and isotopic Raman spectroscopy. The apparent surface diffusion coefficient (∼10-5 cm2 s-1), capacity (∼6.6 wt %, ∼85.7% surface coverage), and stability of hydrogen adatoms on SLG at room temperature and atmospheric pressure are significant, and they are perfectly suited for applications involving stored hydrogen atoms on graphene.

Suppressing Sulfite Dimerization at a Polarized Gold Electrode/Water Solution Interface for High-Quality Gold Electrodeposition.

Solid/liquid interfacial structure occupies great importance in chemistry, biology, and materials. In this paper, by combining EC-SERS study and DFT calculation, we reveal the adsorption and dimerization of sulfite (SO32-) at a gold electrode/water solution interface, and establish an adsorption displacement strategy to suppress the dimerization of sulfite. At the gold electrode/sodium sulfite solution interface, at least two layers of SO32- anions are adsorbed on the electrode surface. As the applied potential shifts negatively, the adsorption strength of the first SO32- layer is weakened gradually and then is dimerized with the second orientated SO32- layer to form S2O52-, and S2O52- is further reduced to S2O32-. After hydroxyethylene disphosphonic acid (HEDP) is introduced to the gold electrode/sodium sulfite solution interface, the second oriented SO32- layer is replaced by a HEDP coadsorption layer. This results in the first layer of SO32- being desorbed directly without any structural transformation or chemical reaction as the potential shifts negatively. The suppression of sulfite dimerization by HEDP is more clear at the gold electrode/gold sulfite solution interface owing to the electroreduction of gold ions. Furthermore, the electrochemical studies and electrodeposition experiments show that as the sulfite dimerization reaction is suppressed, the electroreduction of gold ions is accelerated, and the deposited gold coating is bright and dense with finer grains.

Direct Nanomachining on Semiconductor Wafer By Scanning Electrochemical Microscopy.

Scanning electrochemical microscopy (SECM) is one of the most important instrumental methods of modern electrochemistry due to its high spatial and temporal resolution. We introduced SECM into nanomachining by feeding the electrochemical modulations of the tip electrode back to the positioning system, and we demonstrated that SECM is a versatile nanomachining technique on semiconductor wafers using electrochemically induced chemical etching. The removal profile was correlated to the applied tip current when the tip was held stationary and when it was moving slowly (<20 µm s-1 ), and it followed Faraday's law. Both regular and irregular nanopatterns were translated into a spatially distributed current by the homemade digitally controlled SECM instrument. The desired nanopatterns were "sculpted" directly on a semiconductor wafer by SECM direct-writing mode. The machining accuracy was controlled to the sub-micrometer and even nanometer scales. This advance is expected to play an important role in electrochemical nanomachining for 3D micro/nanostructures in the semiconductor industry.

Microphotoelectrochemical Surface-Enhanced Raman Spectroscopy: Toward Bridging Hot-Electron Transfer with a Molecular Reaction.

The rational design and applications of plasmon-mediated chemical reactions (PMCRs) are fundamentally determined by an understanding of photon-electron-molecule interactions. However, the current understanding of the PMCR of plasmon-decayed hot electron-mediated reactions remains implicit, since there has not been a single measurement of both hot-electron transfer and molecular transformation following photon excitation. Therefore, we invented a method called microphotoelectrochemical surface-enhanced Raman spectroscopy (µPEC-SERS) that uses an ultramicroelectrode (UME) whose dimensions match those of the focused laser spot. This system can simultaneously record the photocurrent (∼picoamps) of hot-electron transfer with a high signal-to-noise ratio and the SERS spectra of a molecular reaction in the same electrode area. The responses of the photocurrent and SERS spectra to laser illumination can correlate the surface reaction activated by hot electrons with the SERS spectral changes. A typical PMCR of p-aminothiophenol (PATP) on a Ag UME was used to illustrate that the correlation of the photocurrent with the spectral changes is capable of revealing the reaction mechanism in terms of the formation of activated oxygenated species. The laser power-, laser wavelength-, and surface roughness-dependent photocurrents link the formation of activated oxygenated species to the hot-electron transfer. Further comparisons of the photocurrent with the conventional electrochemical current of the oxygen reduction reaction indicate that the activated oxygenated species are oxidative in transforming PATP to p,p'-dimercaptoazobenzene, which is supported by a density functional theory (DFT) calculation. Therefore, µPEC-SERS could be a powerful tool for investigating PMCRs and other systems involving photon-electron-molecule interactions.

Photosynergetic Electrochemical Synthesis of Graphene Oxide.

Here we propose a strategy of radical oxidation reaction for the high-efficiency production of graphene oxide (GO). GO plays important roles in the sustainable development of energy and the environment, taking advantages of oxygen-containing functional groups for good dispersibility and assembly. Compared with Hummers' method, electrochemical exfoliation of graphite is considered facile and green, although the oxidation is fairly low. To synthesize GO with better crystallinity and higher oxidation degree, we present a photosynergetic electrochemical method. By using oxalate anions as the intercalation ions and co-reactant, the interfacial concentration of hydroxyl radicals generated during electrochemical exfoliation was promoted, and the oxidation degree was comparable with that of GO prepared by Hummers' method. In addition, the crystallinity was improved with fewer layers and larger size. Moreover, the aniline coassembled GO membrane was selectively permeable to water molecules by the hydrogen-bond interaction, but it was impermeable to Na+, K+, and Mg2+, due to the electrostatic interactions. Thus, it has a prospective application to water desalination and purification. This work opens a novel approach to the direct functionalization of graphene during the electroexfoliation processes and to the subsequent assembly of the functionalized graphene.

Optimizing the interfacial electron transfer capability of single layer graphene by thermal annealing.

The interfacial electron transfer capability of Si/SiO2 wafer supported single layer graphene is optimized by thermal annealing in an inert gas environment, which facilitates its applications in both electrochemical and electronic devices.

Photoelectric effect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers.

Here we report photoelectric-effect-enhanced interfacial charge transfer reactions. The electrochemical corrosion rate of n-type gallium arsenide (n-GaAs) induced by the contact potential at platinum (Pt) and GaAs boundaries can be accelerated by the photoelectric effect of n-GaAs. When a GaAs wafer is illuminated with a xenon light source, the electrons in the valence band of GaAs will be excited to the conduction band and then move to the Pt boundaries due to the different work functions of the two materials. This results in an enhanced contact electric field as well as an enlarged Pt/GaAs contact potential. Consequently, in the presence of electrolyte solution, the polarizations of both the Pt/solution interface and the GaAs/solution interface at the Pt/GaAs/solution 3-phase boundary are enhanced. If the accumulated electrons on the Pt side are removed by electron acceptors in the solution, anodic corrosion of GaAs will be accelerated strictly along the Pt/GaAs/solution 3-phase boundary. This photo-enhanced electrochemical phenomenon can increase the corrosion rate of GaAs and accelerate the process of electrochemical nanoimprint lithography (ECNL) on GaAs. The method opens an innovative, highly efficient, low-cost nanoimprint technique performed directly on semiconductors, and it has prospective applications in the semiconductor industry.

Programmed electrochemical exfoliation of graphite to high quality graphene.

We propose programed potential modulation strategies to balance the ion intercalation/deintercalation, surface tailoring and bubbling dispersion processes in the electrochemical exfoliation of graphite, resulting in high-quality graphene with high crystallinity, low oxidation degree, uniform size distribution and few layers.