Reconfigurable Logic-in-Memory Constructed Using an Organic Antiambipolar Transistor.

We demonstrate an electrically reconfigurable two-input logic-in-memory (LIM) using a dual-gate-type organic antiambipolar transistor (DG-OAAT). The attractive feature of this device is that a phthalocyanine-cored star-shaped polystyrene is used as a nano-floating gate, which enables the electrical switching of individual logic circuits and stores the circuit information by the nonvolatile memory effect. First, the DG-OAAT exhibited Λ-shaped transfer curves with hysteresis by sweeping the bottom-gate voltage. Programming and erasing operations enabled the reversible shift of the Λ-shaped transfer curves. Furthermore, the top-gate voltage effectively tuned the peak voltages of the transfer curves. Consequently, the combination of dual-gate and memory effects achieved electrically reconfigurable two-input LIM operations. Individual logic circuits (e.g., OR/NAND, XOR/NOR, and AND/XOR) were reconfigured by the corresponding programming and erasing operations without any variations in the input signals. Our device concept has the potential to fulfill an epoch-making organic integration circuit with a simple device configuration.

Optically Controllable Organic Logic-in-Memory: An Innovative Approach toward Ternary Data Processing and Storage.

Logic-in-memory (LIM) has emerged as an energy-efficient computing technology, as it integrates logic and memory operations in a single device architecture. Herein, a concept of ternary LIM is established. First, a p-type 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) transistor is combined with an n-type PhC2H4-benzo[de]isoquinolino[1,8-gh]quinolone diimide (PhC2-BQQDI) transistor to obtain a binary memory inverter, in which a zinc phthalocyanine-cored polystyrene (ZnPc-PS4) layer serves as a floating gate. The contrasting photoresponse of the transistors toward visible and ultraviolet light and the efficient hole-trapping ability of ZnPc-PS4 enable us to achieve an optically controllable memory operation with a high memory window of 18 V. Then, a ternary memory inverter is developed using an anti-ambipolar transistor to achieve a three-level data processing and storage system for more advanced LIM applications. Finally, low-voltage operation of the devices is achieved by employing a high-k dielectric layer, which highlights the potential of the developed LIM units for next-generation low-power electronics.

Preparation of Supramolecular Miktoarm Star Copolymers with a Zinc Phthalocyanine Core through ATRP and RAFT Polymerization.

Topological polymers have attracted considerable attention owing to their unique chemical and physical properties. This study demonstrates the formation of novel supramolecular miktoarm star copolymers with a zinc phthalocyanine (ZnPc) core using metal-ligand coordination interactions. Various linear polymers with pyridyl end groups, poly(methyl methacrylate), poly(vinyl acetate) and poly(N-vinyl carbazole), are prepared via reversible addition-fragmentation chain transfer (RAFT) polymerization. This facilitates coordination to the ZnPc core of 4-armed star-shaped polystyrene prepared via atom-transfer radical polymerization (ATRP). Furthermore, the formation of a 1:1 complex of a ZnPc molecule and pyridyl group of the chain-transfer agent for RAFT is confirmed by absorption spectral studies and 1 H NMR spectroscopic analyses. The concept of supramolecular complexation can be extended to the preparation of AB4 -type supramolecular miktoarm star-shaped copolymers with functional cores.

Preparation of Luminescent Thermotropic Liquid Crystal from Benzodiathiazole Derivatives.

Luminescent liquid crystal materials (LLCMs) have been a hot research topic in the field of fluorescent materials. In this study, we successfully designed and synthesized an intense fluorescence thermotropic liquid crystal material with a fluorescence quantum yield (Φ) of 0.26 in the solid state. Moreover, the alkyl chain attached to the terminus of the chromophore was able to promote the stability of electrochemical and thermal properties, which was beneficial to the device fabrication reproducibility and stability of the device performance.