RÉSUMÉ
Photoacoustic imaging techniques with gold nanoparticles as contrast agents have received a great deal of attention. The photoacoustic response of gold nanoparticles strongly depends on the far-field optical properties, which essentially depend on the dielectric constant of the material. The dielectric constant of gold not only varies with wavelength but is also affected by temperature. However, the effect of the temperature dependence of the dielectric constant on gold nanoparticles' photoacoustic response has not been fully investigated. In this work, the Drude-Lorentz model and Mie theory are used to calculate the dielectric constant and absorption efficiency of gold nanospheres in aqueous solution, respectively. Then, the finite element method is used to simulate the heat transfer process of gold nanospheres and surrounding water. Finally, the one-dimensional velocity-stress equation is solved by the finite-difference time-domain method to obtain the photoacoustic response of gold nanospheres. The results show that under the irradiation of a high-fluence nanosecond pulse laser, ignoring the temperature dependence of the dielectric constant will lead to large errors in the photothermal response and the nonlinear photoacoustic signals (it can even exceed 20% and 30%). The relative error of the photothermal and photoacoustic response caused by ignoring the temperature-dependent dielectric constant is determined from both the temperature dependence of absorption efficiency and the maximum temperature increase of gold nanospheres. This work provides a new perspective for the photothermal and photoacoustic effects of gold nanospheres, which is meaningful for the development of high-resolution photoacoustic detectors and nano/microscale temperature measurement techniques.
RÉSUMÉ
Newly emerging two-dimensional transition metal dichalcogenide HfS2 has received considerable attention recently due to its ultrahigh photoresponsivity, well-balanced carrier mobility and an appropriate band gap which offer potential in electronic and optoelectronic devices. In this work, HfS2 flakes up to 200 layers with varying color contrasts are fabricated and transferred on a SiO2/Si substrate. The Raman intensities of HfS2 flakes and Raman intensities of molecules adsorbed on HfS2 flakes are quantitatively studied both theoretically and experimentally by considering an optical interference effect. The effects of the main experimental factors: thickness of SiO2 and excitation wavelength on Raman intensities are also theoretically investigated. Due to the low absorption of HfS2, many strong high-order interference-induced enhancement peaks are observed which are different from high absorption materials like graphene and MoS2, in which only 2-4 interference-induced enhancement peaks exist. Due to the environmental instability of single layer HfS2 under ambient conditions, multi-layer HfS2 is a better choice than single layer HfS2 as a Raman scattering substrate which has a stronger Raman enhancement and a better environmental stability. The discovery here will expand the application of HfS2 flakes in molecular detection.
RÉSUMÉ
Two-dimensional materials, e.g. graphene and molybdenum disulfide (MoS(2)), have attracted great interest in recent years. Identification of the thickness of two-dimensional materials will improve our understanding of their thickness-dependent properties, and also help with scientific research and applications. In this paper, we propose to use optical imaging as a simple, quantitative and universal way to identify the thickness of two-dimensional materials, i.e. mechanically exfoliated graphene, nitrogen-doped chemical vapor deposition grown graphene, graphene oxide and mechanically exfoliated MoS(2). The contrast value can easily be obtained by reading the red (R), green (G) and blue (B) values at each pixel of the optical images of the sample and substrate, and this value increases linearly with sample thickness, in agreement with our calculation based on the Fresnel equation. This method is fast, easily performed and no expensive equipment is needed, which will be an important factor for large-scale sample production. The identification of the thickness of two-dimensional materials will greatly help in fundamental research and future applications.