Large out-of-plane spin-orbit torque in topological Weyl semimetal TaIrTe4.

The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque (SOT) materials provide only an in-plane spin-polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin-polarized current components, which are not suitable for energy-efficient SOT applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using the topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-torque ferromagnetic resonance (STFMR) and second harmonic Hall measurements on devices based on TaIrTe4/Ni80Fe20 heterostructures and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be (4.05 ± 0.23)×104 (ℏ / 2e) (Ωm)-1, which is an order of magnitude higher than the reported values in other materials.

The 2024 Magnonics Roadmap.

Magnonicsis a research field that has gained an increasing interest in both the fundamental and applied sciences in recent years. This field aims to explore and functionalize collective spin excitations in magnetically ordered materials for modern information technologies, sensing applications, and advanced computational schemes. Spin waves, also known as magnons, carry spin angular momenta that allow for the transmission, storage, and processing of information without moving charges. In integrated circuits, magnons enable on-chip data processing at ultrahigh frequencies without the Joule heating, which currently limits clock frequencies in conventional data processors to a few GHz. Recent developments in the field indicate that functional magnonic building blocks for in-memory computation, neural networks, and Ising machines are within reach. At the same time, the miniaturization of magnonic circuits advances continuously as the synergy of materials science, electrical engineering, and nanotechnology allows for novel on-chip excitation and detection schemes. Such circuits can already enable magnon wavelengths of 50 nm at microwave frequencies in a 5G frequency band. Research into non-charge-based technologies is urgently needed in view of the rapid growth of machine learning and artificial intelligence applications, which consume substantial energy when implemented on conventional data processing units. In its first part, the 2024 Magnonics Roadmap provides an update on the recent developments and achievements in the field of nano-magnonics while defining its future avenues and challenges. In its second part, the Roadmap addresses the rapidly growing research endeavors on hybrid structures and magnonics-enabled quantum engineering. We anticipate that these directions will continue to attract researchers to the field and, in addition to showcasing intriguing science, will enable unprecedented functionalities that enhance the efficiency of alternative information technologies and computational schemes.

Generation of skyrmions by combining thermal and spin-orbit torque: breaking half skyrmions into skyrmions.

Skyrmions, swirling spin textures with topologically protected stability and low critical driven-current density, can be generated from the stripe domain with current pulses, bringing them closer to practical applications in racetrack memory. However, the mechanism of this topological transition from the stripe domain to the skyrmion remains unclear because the transition process occurs at a nanosecond timescale, giving rise to difficulties in observing this process using imaging tools. In this study, we controlled the domain wall - skyrmion transition by combining Joule heating with spin-orbit torque (SOT) and experimentally observed the details of this process, by which we confirmed the mechanism: the spatial variation of the topological charge density induces half skyrmions branching from the stripe domains, and these half skyrmions overcome the surface tension and break away from the stripe domain, resulting in the generation of skyrmions. The details were observed by employing Joule heating to overcome the pinning effect and manipulating the strength of the SOT to induce the branching and breaking of half skyrmions. These findings offer new insights into skyrmion generation and serve as an important step towards the development of highly efficient devices for processing and computing based on skyrmionics.

Magnetodynamic properties of ultrathin films of Fe[Formula: see text]Sn[Formula: see text]-a topological kagome ferromagnet.

Fe[Formula: see text]Sn[Formula: see text] is a topological kagome ferromagnet that possesses numerous Weyl points close to the Fermi energy, which can manifest various unique transport phenomena such as chiral anomaly, anomalous Hall effect, and giant magnetoresistance. However, the magnetodynamic properties of Fe[Formula: see text]Sn[Formula: see text] have not yet been explored. Here, we report, for the first time, the measurements of the intrinsic Gilbert damping constant ([Formula: see text]), and the effective spin mixing conductance (g[Formula: see text]) of Pt/Fe[Formula: see text]Sn[Formula: see text] bilayers for Fe[Formula: see text]Sn[Formula: see text] thicknesses down to 2 nm, for which [Formula: see text] is [Formula: see text], and g[Formula: see text] is [Formula: see text]. The films have a high saturation magnetization, [Formula: see text], and large anomalous Hall coefficient, [Formula: see text]. The large values of g[Formula: see text], together with the topological properties of Fe[Formula: see text]Sn[Formula: see text], make Fe[Formula: see text]Sn[Formula: see text]/Pt bilayers useful heterostructures for the study of topological spintronic devices.

Ultra-Low Current 10 nm Spin Hall Nano-Oscillators.

Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications, such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, it shows that current shunting through the Si substrate is the origin of this problem and studies how different seed layers can mitigate it. It finds that an ultra-thin Al2 O3 seed layer and SiN (200 nm) coated p-Si substrates provide the best improvement, enabling us to scale down the SHNO width to a truly nanoscopic dimension of 10 nm, operating at threshold currents below 30 µ $\umu$ A. In addition, the combination of electrical insulation and high thermal conductivity of the Al2 O3 seed will offer the best conditions for large SHNO arrays, avoiding any significant temperature gradients within the array. The state-of-the-art ultra-low operational current SHNOs hence pave an energy-efficient route to scale oscillator-based computing to large dynamical neural networks of linear chains or 2D arrays.

Robust Mutual Synchronization in Long Spin Hall Nano-oscillator Chains.

Mutual synchronization of N serially connected spintronic nano-oscillators boosts their coherence by N and peak power by N2. Increasing the number of synchronized nano-oscillators in chains holds significance for improved signal quality and emerging applications such as oscillator based unconventional computing. We successfully fabricate spin Hall nano-oscillator chains with up to 50 serially connected nanoconstrictions using W/NiFe, W/CoFeB/MgO, and NiFe/Pt stacks. Our experiments demonstrate robust and complete mutual synchronization of 21 nanoconstrictions at an operating frequency of 10 GHz, achieving line widths <134 kHz and quality factors >79,000. As the number of mutually synchronized oscillators increases, we observe a quadratic increase in peak power, resulting in 400-fold higher peak power in long chains compared to individual nanoconstrictions. While chains longer than 21 nanoconstrictions also achieve complete mutual synchronization, it is less robust, and their signal quality does not improve significantly, as they tend to break into partially synchronized states.

Reversible conversion between skyrmions and skyrmioniums.

Skyrmions and skyrmioniums are topologically non-trivial spin textures found in chiral magnetic systems. Understanding the dynamics of these particle-like excitations is crucial for leveraging their diverse functionalities in spintronic devices. This study investigates the dynamics and evolution of chiral spin textures in [Pt/Co]3/Ru/[Co/Pt]3 multilayers with ferromagnetic interlayer exchange coupling. By precisely controlling the excitation and relaxation processes through combined magnetic field and electric current manipulation, reversible conversion between skyrmions and skyrmioniums is achieved. Additionally, we observe the topological conversion from a skyrmionium to a skyrmion, characterized by the sudden emergence of the skyrmion Hall effect. The experimental realization of reversible conversion between distinct magnetic topological spin textures represents a significant development that promises to expedite the advancement of the next generation of spintronic devices.

Field-Free High-Frequency Exchange-Spring Spin-Torque Nano-Oscillators.

Spin-torque nano-oscillators (STNOs) are a type of nanoscale microwave auto-oscillators utilizing spin-torque to generate magnetodynamics with great promise for applications in microwaves, magnetic memory, and neuromorphic computing. Here, we report the first demonstration of exchange-spring STNOs, with an exchange-spring ([Co/Pd]-Co) reference layer and a perpendicular ([Co/Ni]) free layer. This magnetic configuration results in high-frequency (>10 GHz) microwave emission at a zero magnetic field and exchange-spring dynamics in the reference layer and the observation of magnetic droplet solitons in the free layer at different current polarities. Our demonstration of bipolar and field-free exchange-spring-based STNOs operating over a 20 GHz frequency range greatly extends the design freedom and functionality of the current STNO technology for energy-efficient high-frequency spintronic and neuromorphic applications.

Inducing Dzyaloshinskii-Moriya interaction in symmetrical multilayers using post annealing.

The interfacial Dzyaloshinskii-Moriya Interaction (iDMI) is an antisymmetric exchange interaction that is induced by the broken inversion symmetry at the interface of, e.g., a ferromagnet/heavy metal. Thus, the presence of iDMI is not expected in symmetrical multilayer stacks of such structures. Here, we use thermal annealing to induce the iDMI in a [Py/Pt]×10 symmetrical multilayer stack. Brillouin light scattering spectroscopy is used to directly evidence the iDMI induction in the annealed sample. Structural characterizations highlight the modified crystallinity as well as a higher surface roughness of the sample after annealing. First principles electronic structure calculations demonstrate a monotonic increase of the iDMI with the interfacial disorder due to the interdiffusion of atoms, depicting the possible origin of the induced iDMI. The presented method can be used to tune the iDMI strength in symmetric multilayers, which are the integral part of racetrack memories, magnonic devices as well as spin-orbitronic elements.

Magnetic force microscopy of an operational spin nano-oscillator.

Magnetic force microscopy (MFM) is a powerful technique for studying magnetic microstructures and nanostructures that relies on force detection by a cantilever with a magnetic tip. The detected magnetic tip interactions are used to reconstruct the magnetic structure of the sample surface. Here, we demonstrate a new method using MFM for probing the spatial profile of an operational nanoscale spintronic device, the spin Hall nano-oscillator (SHNO), which generates high-intensity spin wave auto-oscillations enabling novel microwave applications in magnonics and neuromorphic computing. We developed an MFM system by adding a microwave probe station to allow electrical and microwave characterization up to 40 GHz during the MFM process. SHNOs-based on NiFe/Pt bilayers with a specific design compatible with the developed system-were fabricated and scanned using a Co magnetic force microscopy tip with 10 nm spatial MFM resolution, while a DC current sufficient to induce auto-oscillation flowed. Our results show that this developed method provides a promising path for the characterization and nanoscale magnetic field imaging of operational nano-oscillators.

Freezing and thawing magnetic droplet solitons.

Magnetic droplets are non-topological magnetodynamical solitons displaying a wide range of complex dynamic phenomena with potential for microwave signal generation. Bubbles, on the other hand, are internally static cylindrical magnetic domains, stabilized by external fields and magnetostatic interactions. In its original theory, the droplet was described as an imminently collapsing bubble stabilized by spin transfer torque and, in its zero-frequency limit, as equivalent to a bubble. Without nanoscale lateral confinement, pinning, or an external applied field, such a nanobubble is unstable, and should collapse. Here, we show that we can freeze dynamic droplets into static nanobubbles by decreasing the magnetic field. While the bubble has virtually the same resistance as the droplet, all signs of low-frequency microwave noise disappear. The transition is fully reversible and the bubble can be thawed back into a droplet if the magnetic field is increased under current. Whereas the droplet collapses without a sustaining current, the bubble is highly stable and remains intact for days without external drive. Electrical measurements are complemented by direct observation using scanning transmission x-ray microscopy, which corroborates the analysis and confirms that the bubble is stabilized by pinning.

Fabrication of voltage-gated spin Hall nano-oscillators.

We demonstrate an optimized fabrication process for electric field (voltage gate) controlled nano-constriction spin Hall nano-oscillators (SHNOs), achieving feature sizes of <30 nm with easy to handle ma-N 2401 e-beam lithography negative tone resist. For the nanoscopic voltage gates, we utilize a two-step tilted ion beam etching approach and through-hole encapsulation using 30 nm HfOx. The optimized tilted etching process reduces sidewalls by 75% compared to no tilting. Moreover, the HfOx encapsulation avoids any sidewall shunting and improves gate breakdown. Our experimental results on W/CoFeB/MgO/SiO2 SHNOs show significant frequency tunability (6 MHz V-1) even for moderate perpendicular magnetic anisotropy. Circular patterns with diameter of 45 nm are achieved with an aspect ratio better than 0.85 for 80% of the population. The optimized fabrication process allows incorporating a large number of individual gates to interface to SHNO arrays for unconventional computing and densely packed spintronic neural networks.

Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing.

Synchronization of large spin Hall nano-oscillator (SHNO) arrays is an appealing approach toward ultrafast non-conventional computing. However, interfacing to the array, tuning its individual oscillators and providing built-in memory units remain substantial challenges. Here, we address these challenges using memristive gating of W/CoFeB/MgO/AlOx-based SHNOs. In its high resistance state, the memristor modulates the perpendicular magnetic anisotropy at the CoFeB/MgO interface by the applied electric field. In its low resistance state the memristor adds or subtracts current to the SHNO drive. Both electric field and current control affect the SHNO auto-oscillation mode and frequency, allowing us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate that two individually controlled memristors can be used to tune a four-SHNO chain into differently synchronized states. Memristor gating is therefore an efficient approach to input, tune and store the state of SHNO arrays for non-conventional computing models.

Using the photoinduced L 3 resonance shift in Fe and Ni as time reference for ultrafast experiments at low flux soft x-ray sources.

We study the optical-pump induced ultrafast transient change of x-ray absorption at L 3 absorption resonances of the transition metals Ni and Fe in the Fe0.5Ni0.5 alloy. We find the effect for both elements to occur simultaneously on a femtosecond timescale. This effect may hence be used as a handy cross correlation scheme, providing a time-zero reference for ultrafast optical-pump soft x-ray-probe measurement. The method benefits from a relatively simple experimental setup as the sample itself acts as time-reference tool. In particular, this technique works with low flux ultrafast soft x-ray sources. The measurements are compared to the cross correlation method introduced in an earlier publication.

Femtosecond laser driven precessing magnetic gratings.

Manipulation and detection of spins at the nanoscale is of considerable contemporary interest as it may not only facilitate a description of fundamental physical processes but also plays a critical role in the development of spintronic devices. Here, we describe the application of a novel combination of transient grating excitation with Lorentz ultrafast electron microscopy to control and detect magnetization dynamics with combined nanometer and picosecond resolutions. Excitation of Ni80Fe20 thin film samples results in the formation of transient coherently precessing magnetic gratings. From the time-resolved results, we extract detailed real space information of the magnetic precession, including local magnetization, precession frequency, and relevant decay factors. The Lorentz contrast of the dynamics is sensitive to the alignment of the in-plane components of the applied field. The experimental results are rationalized by a model considering local demagnetization and the phase of the precessing magnetic moments. We envision that this technique can be extended to the study of spin waves and dynamic behavior in ferrimagnetic and antiferromagnetic systems.

Roadmap of spin-orbit torques.

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

Frequency comb enhanced Brillouin microscopy.

Brillouin light scattering (BLS) microscopy is a well established and powerful technique to study acoustic and magnetic excitations in the frequency domain with sub-micron spatial resolution. Many other spectroscopic techniques have benefited from the introduction of femtosecond laser sources to optically pump and stimulate the sample under investigation. In BLS microscopy, the use of femtosecond lasers as the excitation source introduces several challenges, primarily since the measured frequency shift is small and the signal levels are weak due to the low duty cycle of typical femtosecond lasers. Here we present a method to evade these challenges. A strong enhancement of the weak scattering amplitude on selected modes is observed by pumping the sample with a high repetition rate frequency comb laser source. The laser beam can be focused to the diffraction limit, providing a micron pumping area. We can thus preserve the innate high frequency and spatial resolution of BLS microscopy. Furthermore, we are able to induce a point-like source of mode-selected elementary excitations which propagate away from the pumping spot. We conclude that we have demonstrated frequency comb pumped BLS microscopy as an attractive tool for studies of ultrafast induced laser dynamics directly in the frequency domain.

Giant voltage-controlled modulation of spin Hall nano-oscillator damping.

Spin Hall nano-oscillators (SHNOs) are emerging spintronic devices for microwave signal generation and oscillator-based neuromorphic computing combining nano-scale footprint, fast and ultra-wide microwave frequency tunability, CMOS compatibility, and strong non-linear properties providing robust large-scale mutual synchronization in chains and two-dimensional arrays. While SHNOs can be tuned via magnetic fields and the drive current, neither approach is conducive to individual SHNO control in large arrays. Here, we demonstrate electrically gated W/CoFeB/MgO nano-constrictions in which the voltage-dependent perpendicular magnetic anisotropy tunes the frequency and, thanks to nano-constriction geometry, drastically modifies the spin-wave localization in the constriction region resulting in a giant 42% variation of the effective damping over four volts. As a consequence, the SHNO threshold current can be strongly tuned. Our demonstration adds key functionality to nano-constriction SHNOs and paves the way for energy-efficient control of individual oscillators in SHNO chains and arrays for neuromorphic computing.

Correlation of magnetic and magnetoresistive properties of nanoporous Co/Pd thin multilayers fabricated on anodized TiO2 templates.

In this study, we consider a technological approach to obtain a high perpendicular magnetic anisotropy of the Co/Pd multilayers deposited on nanoporous TiO2 templates of different types of surface morphology. It is found that the use of templates with homogeneous and smoothed surface relief, formed on silicon wafers, ensures conservation of perpendicular anisotropy of the deposited films inherent in the continuous multilayers. Also, their magnetic hardening with doubling of the coercive field is observed. However, inhomogeneous magnetic ordering is revealed in the porous films due to the occurrence of magnetically soft regions near the pore edges and/or inside the pores. Modeling of the field dependences of magnetization and electrical resistance indicates that coherent rotation is the dominant mechanism of magnetization reversal in the porous system instead of the domain-wall motion typical of the continuous multilayers, while their magnetoresistance is determined by electron-magnon scattering, similarly to the continuous counterpart. The preservation of spin waves in the porous films indicates a high uniformity of the magnetic ordering in the fabricated porous systems due to a sufficiently regular pores array introduced into the films, despite the existence of soft-magnetic regions. The results are promising for the design and fabrication of future spintronic devices.

Complex magnetic ordering in nanoporous [Co/Pd]5-IrMn multilayers with perpendicular magnetic anisotropy and its impact on magnetization reversal and magnetoresistance.

We have systematically investigated the magnetization reversal characteristics and magnetoresistance of continuous and nanoporous [Co/Pd]5-IrMn multilayered thin films with perpendicular magnetic anisotropy at different temperatures (4-300 K). For their nanostructuring, porosity was induced by means of deposition onto templates of anodized titania with small (∼30 nm in diameter) homogeneously distributed pores. The magnetization reversal and magnetoresistance of the porous films were found to be closely related to the splitting of the ferromagnetic material into regions with different magnetic properties, in correlation with the complex morphology of the porous system. Independent magnetization reversal is detected for these regions, and is accompanied by its strong impact on the magnetic order in the capping IrMn layer. Electron-magnon scattering is found to be a dominant mechanism of magnetoresistance, determining its almost linear field dependence in a high magnetic field and contributing to its magnetoresistance behavior, similar to magnetization reversal, in a low magnetic field. Partial rotation of IrMn magnetic moments, consistent with the magnetization reversal of the ferromagnet, is proposed as an explanation for the two-state resistance behavior observed in switching between high-resistive and low-resistive values at the magnetization reversal of the porous system studied.