RESUMO
Two-dimensional layered transition metal dichalcogenides (TMDs) have been investigated intensively as next-generation semiconducting materials. However, conventional TMD-based devices exhibit large contact resistance at the interface between the TMD and the metal electrode because of Fermi level pinning and the Schottky barrier, which results in poor charge injection. Here, we present enhanced charge transport characteristics in molybdenum diselenide (MoSe2) by means of a sequential engineering process called PESOD-2H/1T (i.e., phase transition engineering combined with surface transfer organic cationic dye doping; 2H and 1T represent the trigonal prismatic and octahedral phases, respectively). Substantial improvements are observed in PESOD-processed MoSe2 phototransistors, specifically, an approximately 40â¯000-fold increase in effective carrier mobility and a 100â¯000-fold increase in photoresponsivity, compared with the mobility and photoresponsivity of intact MoSe2 phototransistors. Moreover, the PESOD-processed MoSe2 phototransistor on a flexible substrate maintains its optoelectronic properties under tensile stress, with a bending radius of 5 mm.
RESUMO
Ambipolar organic phototransistors were fabricated using a natural pigment 6,6'-dibromoindigo (6-BrIG) as the active channel. These phototransistors yielded significantly enhanced currents upon light illumination with photoresponsivities and external quantum efficiencies as high as 10.3 A W-1 and 2437% for the n-channel, and 55.4 mA W-1 and 13.1% for the p-channel, respectively. In addition, simple inverter complementary circuits were fabricated by integrating two ambipolar phototransistors. Channel current was dependent on light intensity and voltage bias. This study provides a basis for an in-depth understanding of the optoelectronic characteristics of 6-BrIG, and introduces this material as an ecofriendly candidate for optoelectronic applications.
