RESUMO
Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/AlGaAs heterostructure with a single hole occupancy in each dot. The charging diagram of the device was mapped out using charge detection confirming that the single hole limit is reached. In that limit, a detailed study of the two-hole spin system was performed using high bias magnetotransport spectroscopy. In contrast to electron systems, the hole spin was found not to be conserved during interdot resonant tunneling. This allows one to fully map out the two-hole energy spectrum as a function of the magnitude and the direction of the external magnetic field. The heavy-hole g factor was extracted and shown to be strongly anisotropic, with a value of 1.45 for a perpendicular field and close to zero for an in-plane field as required for hybridizing schemes between spin and photonic quantum platforms.
RESUMO
Manipulating qubits via electrical pulses in a piezoelectric material such as GaAs can be expected to generate incidental acoustic phonons. In this Letter we determine theoretically and experimentally the consequences of these phonons for semiconductor spin qubits using Landau-Zener-Stückelberg interferometry. Theoretical calculations predict that phonons in the presence of the spin-orbit interaction produce both phonon-Rabi fringes and accelerated evolution at the singlet-triplet anticrossing. Observed features confirm the influence of these mechanisms. Additionally, evidence is found that the pulsed gates themselves act as phonon cavities increasing the influence of phonons under specific resonant conditions.
RESUMO
Qubits based on the singlet (S) and the triplet (T(0), T(+)) states in double quantum dots have been demonstrated in separate experiments. It has been recently proposed theoretically that under certain conditions a quantum interference could occur from the interplay between these two qubit species. Here we report experiments and modeling that confirm these theoretical predictions and identify the conditions under which this interference occurs. Density matrix calculations show that the interference pattern manifests primarily via the occupation of the common singlet state. The S/T(0) qubit is found to have a much longer coherence time as compared to the S/T(+) qubit.
RESUMO
Nanostructures made of semiconductors, such as quantum wells and quantum dots (QD), are well known, and some have been incorporated in practical devices. Here we focus on novel structures made of QDs and related devices for terahertz (THz) generation. Their potential advantages, such as low threshold current density, high characteristic temperature, increased differential gain, etc, make QDs promising candidates for light emitting applications in the THz region. Our idea of using resonant tunneling through QDs is presented, and initial results on devices consisting of self-assembled InAs QDs in an undoped GaAs matrix, with a design incorporating a GaInNAs/GaAs short period superlattice, are discussed. Moreover, shallow impurities are also being explored for possible THz emission: the idea is based on the tunneling through bound states of individual donor or acceptor impurities in the quantum well. Initial results on devices having an AlGaAs/GaAs double-barrier resonant tunneling structure are discussed.
RESUMO
Intersubband lasing at 12-16 microm based on a CO2 laser pumped stimulated resonant Raman process in GaAs/AlGaAs three-level double-quantum-well structures is reported. The presence, or lack of, lasing action provides evidence for resonantly coupled modes of collective electronic intersubband transitions and longitudinal optical phonons. An anticrossing behavior of these modes is clearly seen when the difference between the pump and lasing energies (i.e., Stokes Raman shift) is compared with the subband separation. This work reveals the significance of the strong coupling between intersubband transitions and phonons and raises a new possibility of realizing a phonon "laser."
