Strain-engineered growth of two-dimensional materials.

The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. For two-dimensional (2D) semiconductors, this is not feasible as they typically do not interact epitaxially with the substrate. Here, we demonstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal coefficient of expansion mismatch between the substrate and semiconductor. Using WSe2 as a model system, we demonstrate stable built-in strains ranging from 1% tensile to 0.2% compressive on substrates with different thermal coefficient of expansion. Consequently, we observe a dramatic modulation of the band structure, manifested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton in bilayer and monolayer WSe2, respectively. The growth method developed here should enable flexibility in design of more sophisticated devices based on 2D materials.Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.

Direct growth of single-crystalline III-V semiconductors on amorphous substrates.

The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V's on application-specific substrates by direct growth.

Structure sensitivity of vibrational spectra of mesoporous silica SBA-15 and Pt/SBA-15.

The vibrational properties of mesoporous silica (SBA-15) were investigated by deep ultraviolet (UV) Raman and infrared spectroscopies with and without the presence of platinum nanoparticles in the mesopores that were incorporated by sonication. Raman and IR spectral line assignments were made by comparison to amorphous silicas. This procedure permitted identification of vibrations of longitudinal (LO) and transverse (TO) optical lattice modes, the presence of Si-OH, and vibrational modes associated with the presence of three-, four-, and six-membered siloxane rings. Hydraulic pressing of the mesoporous silica with pressure in the range 3-7 tons cm(-2) destroys the X-ray diffraction pattern and strongly decreases the Raman peak (D2) associated with three-membered rings at the surface. In the presence of platinum nanoparticles in the silica mesopores, a peak attributed to a Pt-O stretching vibration appears at between 530 and 580 cm(-1) in the UV-Raman spectrum, which can be used to monitor the presence of the platinum particles and their interaction with the support. The D2 feature in the UV-Raman spectra also decreases with increasing Pt loading, which is attributed to interactions of the Pt nanoparticles with the silica surface.