Novel Solid-State Solar Cell Based on Hole-Conducting MOF-Sensitizer Demonstrating Power Conversion Efficiency of 2.1.

This work reports on designing of first successful MOF-sensitizer based solid-state photovoltaic device, perticularly with a meaningful output power conversion efficiency. In this study, an intrinsically conductive cobalt-based MOFs (Co-DAPV) formed by the coordination between Co (II) ions and a redox active di(3-diaminopropyl)-viologen (i.e., DAPV) ligand is investigated as sensitizer. Hall-effect measurement shows p-type conductivity of the Co-DAPV film with hole mobility of 0.017 cm2 V-1 s-1, suggesting its potential application as hole transporting sensitizer. Further, the energy levels of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of Co-DAPV are well-matched to be suitably employed for sensitizing TiO2. Thus, by layer-by-layer deposition of hole conducting MOF-sensitizer onto mesoporous TiO2 film, a power conversion efficiency of as high as 2.1% is achieved, which exceeds the highest efficiency values of MOF-sensitized liquid-junction solar cells reported so far.

Interfacial Engineering of CdO-CdSe 3D Microarchitectures with in situ Photopolymerized PEDOT for an Enhanced Photovoltaic Performance.

In the present work, porous 3D CdO-microstructured electrode obtained by pyrolysis of 3D CdCO3 microstructures is self-sensitized with CdSe using an ion exchange reaction. After sensitization, an interfacial treatment of the CdO-CdSe interface is performed by depositing a thin film of PEDOT using a photoinduce polymerization route. The microstructured electrode before and after interfacial treatment is characterized using field-emission scanning microscope, energy dispersive X-ray analyzer, contact angle measurement, UV-Visible absorption spectrophotometer and X-ray photoelectron spectrometer. After constructing a liquid junction solar cell with a Pt counter electrode, the photovoltaic performance and interfacial charge transfer kinetics across the CdO-CdSe interface before and after PEDOT treatment are investigated. The results exhibit an improved interfacial charge-transfer resistance after the PEDOT treatment, which leads to enhance the short-circuit current by 15.81% and the power conversion efficiency by 19.82%.