Open-source controller for low-cost and high-speed atomic force microscopy imaging of skin corneocyte nanotextures.

High-speed atomic force microscopes (HS-AFMs) with high temporal resolution enable dynamic phenomena to be visualized at nanoscale resolution. However, HS-AFMs are more complex and costlier than conventional AFMs, and particulars of an open-source HS-AFM controller have not been published before. These high entry barriers hinder the popularization of HS-AFMs in both academic and industrial applications. In addition, HS-AFMs generally have a small imaging area that limits the fields of implementation. This study presents an open-source controller that enables a low-cost simplified AFM to achieve a maximum tip-sample velocity of 5,093 µm/s (9.3 s/frame, 512 × 512 pixels), which is nearly 100 times higher than that of the original controller. Moreover, the proposed controller doubles the imaging area to 46.3 × 46.3 µm2 compared to that of the original system. The low-cost HS-AFM can successfully assess the severity of atopic dermatitis (AD) by measuring the nanotexture of human skin corneocytes in constant height DC mode. The open-source controller-based HS-AFM system costs less than $4,000, which provides resource-limited research institutes with affordable access to high-throughput nanoscale imaging to further expand the HS-AFM research community.

Highly aligned carbon nanotubes and their sensor applications.

Flexible electronics comprising carbon nanotube (CNT) membranes and polymer composites are used in diverse applications, including health monitoring. Devices prepared using such electronics need to exhibit acceptable sensitivity at high strains, with the advantage of negligible hysteresis. Herein, we report a simple, physically robust method to fabricate a highly sensitive and stretchable sensor that enables the detection of pressure, strain, and human activity with facial expressions based on the highly aligned carbon nanotubes embedded in polydimethylsiloxane (PDMS). The aligned CNT network in PDMS modulates the electron conduction path in a unidirectional manner and provides multimodal mechanical sensing ability with a wide sensing range and high sensitivity. The highly aligned CNT sensor demonstrates high-pressure sensitivity (1.29 kPa-1), excellent stability and repeatability (over 10 000 cycles) with negligible hysteresis, and a good strain sensitivity over a wide range (up to 65%) with a good linear response. We confirmed the applicability of the sensor to detect small signals, such as heartbeat and pulse rate, expressions, and voice recognition, and that it could distinguish between various human motions with a very short recovery time of approximately 50 ms.

High performance complementary WS2 devices with hybrid Gr/Ni contacts.

Two-dimensional (2D) transition metal dichalcogenides have attracted vibrant interest for future solid-state device applications due to their unique properties. However, it is challenging to realize 2D material based high performance complementary devices due to the stubborn Fermi level pinning effect and the lack of facile doping techniques. In this paper, we reported a hybrid Gr/Ni contact to WS2, which can switch carrier types from n-type to p-type in WS2. The unorthodox polarity transition is attributed to the natural p-doping of graphene with Ni adsorption and the alleviation of Fermi level pinning in WS2. Furthermore, we realized asymmetric Ni and Gr/Ni hybrid contacts to a multilayer WS2 device, and we observed synergistic p-n diode characteristics with excellent current rectification exceeding 104, and a near unity ideality factor of 1.1 (1.6) at a temperature of 4.5 K (300 K). Lastly, our WS2 p-n device exhibits high performance photovoltaic ability with a maximum photoresponsivity of 4 × 104 A W-1 at 532 nm wavelength, that is 108 times higher than that of graphene and 50 times better than that of the monolayer MoS2 photodetector. This doping-free carrier type modulation technique will pave the way to realize high performance complementary electronics and optoelectronic devices based on 2D materials.

WSe2 Homojunction p-n Diode Formed by Photoinduced Activation of Mid-Gap Defect States in Boron Nitride.

A single nanoflake lateral p-n diode (in-plane) based on a two-dimensional material can facilitate electronic architecture miniaturization. Here, a novel lateral homojunction p-n diode of a single WSe2 nanoflake is fabricated by photoinduced doping via optical excitation of defect states in an h-BN nanoflake upon illumination. This lateral diode is fabricated using a mechanical exfoliation technique by stacking the WSe2 nanoflake partially on the h-BN and Si substrates. The carrier type in the part of the WSe2 film on the h-BN substrate is inverted and a built-in potential difference is formed, ranging from 5.0 to 4.50 eV, which is measured by Kelvin probe force microscopy. The contact potential difference across the junction of p-WSe2 and n-WSe2 is found to be ∼492 mV. The lateral diode shows an excellent rectification ratio, up to ∼3.9 × 104, with an ideality factor of ∼1.1. A typical self-biased photovoltaic behavior is observed at the p-n junction upon the illumination of incident light, that is, a positive open-circuit voltage (Voc) is generated, that is, voltage obtained (at Ids = 0 V), and also a negative short-circuit current (Isc) is generated, that is, current obtained (at Vds = 0 V). The presence of built-in potential in the proposed homojunction diode establishes Isc and Voc upon illumination, which can be implemented for a self-powered photovoltaic system in future electronics. The proposed doping technique can be effectively applied to form planar homojunction devices without a photoresist for future electronic and optoelectronic applications.

Modulation of Magnetoresistance Polarity in BLG/SL-MoSe2 Heterostacks.

Two-dimensional (2D) layered materials have an atomically thin and flat nature which makes it an ultimate candidate for spintronic devices. The spin-valve junctions (SVJs), composed of 2D materials, have been recognized as unique features of spin transport polarization. However, the magnetotransport properties of SVJs are highly influenced by the type of intervening layer (spacer) inserted between the ferromagnetic materials (FMs). In this situation, the spin filtering effect at the interfaces plays a critical role in the observation of the magnetoresistance (MR) of such magnetic structures, which can be improved by using promising hybrid structure. Here, we report MR of bilayer graphene (BLG), single-layer MoSe2 (SL-MoSe2), and BLG/SL-MoSe2 heterostack SVJs. However, before annealing, BLG and SL-MoSe2 SVJs demonstrate positive MR, but after annealing, BLG reverses its polarity while the SL-MoSe2 maintains its polarity and demonstrated stable positive spin polarizations at both interfaces due to meager doping effect of ferromagnetic (FM) contacts. Further, Co/BLG/SL-MoSe2/NiFe determines positive MR, i.e., ~ 1.71% and ~ 1.86% at T = 4 K before and after annealing, respectively. On the contrary, NiFe/BLG/SL-MoSe2/Co SVJs showed positive MR before annealing and subsequently reversed its MR sign after annealing due to the proximity-induced effect of metals doping with graphene. The obtained results can be useful to comprehend the origin of polarity and the selection of non-magnetic material (spacer) for magnetotransport properties. Thus, this study established a new paragon for novel spintronic applications.

Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides.

Among p-n junction devices with multilayered heterostructures with WSe2 and MoSe2, a device with the MoSe2-WSe2-MoSe2 (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe2-WSe2 (NP) structure. The ideality factor of the NPN structure was estimated to be ∼1, lower than that of the NP structure. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe2 and WSe2. Hence, the built-in electric field was weaker, and the motion of the photocarriers was facilitated. These behaviors were confirmed experimentally from a photocurrent mapping analysis and Kelvin probe force microscopy. The work function depended on the wavelength of the illuminator, and quasi-Fermi level was estimated. The surface photovoltage on the MoSe2 region was higher than that on WSe2 because the lower bandgap of MoSe2 induces more electron-hole pair generation.

Visibility of hexagonal boron nitride on transparent substrates.

The high transmittance and low reflectance of monolayer hexagonal boron nitride (hBN) lead to its invisibility under white-light, causing serious troubles in the search, transfer, and fabrication of 2D material devices. In this work, we demonstrate enhancing the contrast of hBN on a transparent substrate by simulation and experimental observation, where the highest contrast is obtained by using a polymer-based interfacial layer on a polydimethylsiloxane (PDMS) substrate. The simulation result reveals that the contrast under short wavelength light is higher than that under long wavelength. To confirm this, the red-green-blue components are extracted from the optical color image. The blue component image shows an hBN flake clearly on the substrate, while the hBN flake fades on the green and red components. Moreover, the contrast on transparent substrates have only positive value, while opaque substrates cause both negative and positive contrast depending on the thickness of the interfacial layer. Thus, the high contrast (∼4.5%) of hBN on the PDMS substrate enables us to observe mono- and few-layer hBN flakes under white-light illumination by an optical microscope.

Quartz tuning fork based three-dimensional topography imaging for sidewall with blind features.

Atomic force microscopy has a tremendous number of applications in a wide variety of fields, particularly in the semiconductor area for the 3D-stacked device. Imaging three-dimensional (3D) structures with blind features has progressively become a critical technique. Recently, a 3D-atomic force microscopy (AFM) technique has been proposed to image 3D features, especially those having sharp apices, like silicon pillars. However, the scanning strategy has drawbacks, such as long scanning time, and unstable operation, based on the premature algorithm. Herein, an improved 3D-AFM algorithm is reported that overcomes the aforementioned problems by an intelligent 3D scanning algorithm that incorporates sidewall history tracking, troubleshooting for sharp sidewall and sticking, and reactive direction adjustment. The proposed algorithm enables the 3D imagery of ZnO nano-rods and silicon nano-pillars to be achieved by using a high aspect-ratio multiwall carbon nanotube-based AFM probe, without time-consuming disorientation. This study establishes a method to construct a 3D image of arbitrary shape in reduced scanning time.

Twist-Angle-Dependent Optoelectronics in a Few-Layer Transition-Metal Dichalcogenide Heterostructure.

Lattice matching has been supposed to play an important role in the coupling between two materials in a vertical heterostructure (HS). To investigate this role, we fabricated a heterojunction device with a few layers of p-type WSe2 and n-type MoSe2 with different crystal orientation angles. The crystal orientations of WSe2 and MoSe2 were estimated using high-resolution X-ray diffraction. Heterojunction devices were fabricated with twist angles of 0, 15, and 30°. The I- V curve of the sample with the twist angle of 0° under the dark condition showed a diodelike behavior. The strong coupling due to lattice matching caused a well-established p-n junction. In cases of 15 and 30° samples, the van der Waals gap was built because of lattice mismatching, which resulted in the formation of a potential barrier. However, when the light-emitting diode light of 365 nm (3.4 eV) was illuminated, it was possible for excited electrons and holes to jump beyond the potential barrier and the current flowed well in both forward and reverse directions. The effects of the twist angle were analyzed by spectral responsivity and external quantum efficiency, where it was found that the untwisted HS exhibited higher sensitivity under IR illumination, whereas the twisting effect was not noticeable under UV illumination. From photoluminescence and Raman spectroscopy studies, it was confirmed that the twisted HS showed a weak coupling because of the lattice mismatch.

Acrylate-assisted fractal nanostructured polymer dispersed liquid crystal droplet based vibrant colored smart-windows.

We have studied liquid crystals (LCs) and acrylate-assisted thiol-ene compositions to synthesize dye based colorful polymer dispersed liquid crystals (PDLCs) without using a photo-initiator for smart-windows applications. A typical PDLC mixture was prepared by mixing LCs with UV-curable monomers, which included triethylene glycol diacrylate (TEGDA), trimethylolpropane diallyl ether (TMPDE, di-functional ene monomer), trimethylolpropane tris(3-mercaptopropionate) (TMPTMP, a thiol as a cross-linker), and a dichroic dye. The ratios of the TMPDE/TMPTMP and the LCs/TEGDA showed significant effects in altering the properties of the UV-cured PDLCs. During the curing process, the monomers polymerize and led to the encapsulation of the LCs in the form of interesting fractal nanostructures by a polymerization induced phase separation process. The switching time, electro-optical properties, power consumption, and ageing of the fabricated PDLCs were investigated. It was possible to achieve a 70-80% contrast (ΔT) at a voltage difference of ∼70 V with a fast switching time (τ) as low as < 20 milliseconds (ms) and low power consumption. These PDLCs had a low threshold voltage that ranged between 10 and 20 V. The sustainability of the fabricated UV-cured PDLCs was analyzed for up to 90 days, and the PDLCs were observed to be stable.

Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS2 films.

Graphene has gigantic potential in the development of advanced spintronic devices. The interfacial interactions of graphene with semiconducting transition metal dichalcogenides improve the electronic properties drastically, making it an intriguing candidate for spintronic applications. Here, we fabricated bilayer graphene encapsulated by WS2 layers to exploit the interface-induced spin-orbit interaction (SOI). We designed a dual gated device, where the SOI is tuned by gate voltages. The strength of induced SOI in the bilayer graphene is dramatically elevated, which leads to a strong weak antilocalization (WAL) effect at low temperature. The quantitative analysis of WAL demonstrates that the spin relaxation time is 10 times smaller than in bilayer graphene on conventional substrates. To support these results, we also examined Shubnikov-de Haas (SdH) oscillations, which give unambiguous evidence of the zero-field spin-splitting in our bilayer graphene. The spin-orbit coupling constants estimated by two different measurements (i.e., the WAL effect and SdH oscillations) show close values as a function of gate voltage, supporting the self-consistency of this study's experimental results. The gate modulation of the SOI in bilayer graphene encapsulated by WS2 films establishes a novel way to explore the manipulation of spin-dependent transport through an electric field.

Van der Waals heterojunction diode composed of WS2 flake placed on p-type Si substrate.

P-N junctions represent the fundamental building blocks of most semiconductors for optoelectronic functions. This work demonstrates a technique for forming a WS2/Si van der Waals junction based on mechanical exfoliation. Multilayered WS2 nanoflakes were exfoliated on the surface of bulk p-type Si substrates using a polydimethylsiloxane stamp. We found that the fabricated WS2/Si p-n junctions exhibited rectifying characteristics. We studied the effect of annealing processes on the performance of the WS2/Si van der Waals p-n junction and demonstrated that annealing improved its electrical characteristics. However, devices with vacuum annealing have an enhanced forward-bias current compared to those annealed in a gaseous environment. We also studied the top-gate-tunable rectification characteristics across the p-n junction interface in experiments as well as density functional theory calculations. Under various temperatures, Zener breakdown occurred at low reverse-bias voltages, and its breakdown voltage exhibited a negative coefficient of temperature. Another breakdown voltage was observed, which increased with temperature, suggesting a positive coefficient of temperature. Therefore, such a breakdown can be assigned to avalanche breakdown. This work demonstrates a promising application of two-dimensional materials placed directly on conventional bulk Si substrates.