Effect of Protective Layer on the Performance of Monocrystalline Silicon Cell for Indoor Light Harvesting.

The development of renewable energy sources has grown increasingly as the world shifts toward lowering carbon emissions and supporting sustainability. Solar energy is one of the most promising renewable energy sources, and its harvesting potential has gone beyond typical solar panels to small, portable devices. Also, the trend toward smart buildings is becoming more prevalent at the same time as sensors and small devices are becoming more integrated, and the demand for dependable, sustainable energy sources will increase. Our work aims to tackle the issue of identifying the most suitable protective layer for small optical devices that can efficiently utilize indoor light sources. To conduct our research, we designed and tested a model that allowed us to compare the performance of many small panels made of monocrystalline cells laminated with three different materials: epoxy resin, an ethylene-tetrafluoroethylene copolymer (ETFE), and polyethylene terephthalate (PET), under varying light intensities from LED and CFL sources. The methods employed encompass contact angle measurements of the protective layers, providing insights into their wettability and hydrophobicity, which indicates protective layer performance against humidity. Reflection spectroscopy was used to evaluate the panels' reflectance properties across different wavelengths, which affect the light amount arrived at the solar cell. Furthermore, we characterized the PV panels' electrical behavior by measuring short-circuit current (ISC), open-circuit voltage (VOC), maximum power output (Pmax), fill factor (FF), and load resistance (R). Our findings offer valuable insights into each PV panel's performance and the protective layer material's effect. Panels with ETFE layers exhibited remarkable hydrophobicity with a mean contact angle of 77.7°, indicating resistance against humidity-related effects. Also, panels with ETFE layers consistently outperformed others as they had the highest open circuit voltage (VOC) ranging between 1.63-4.08 V, fill factor (FF) between 35.9-67.3%, and lowest load resistance (R) ranging between 11,268-772 KΩ.cm-2 under diverse light intensities from various light sources, as determined by our results. This makes ETFE panels a promising option for indoor energy harvesting, especially for powering sensors with low power requirements. This information could influence future research in developing energy harvesting solutions, thereby making a valuable contribution to the progress of sustainable energy technology.

Synthesis and Characterization of Novel Sprayed Ag-Doped Quaternary Cu2MgSnS4 Thin Film for Antibacterial Application.

In this work, the effects of silver doping with different Ag/(Ag + Cu) ratios (i.e., 2%, 5% and 10% at.% in the spray solution) on the structural, morphological, optical, electrical and antibacterial properties of Cu2MgSnS4 (CMTS) thin film grown by spray pyrolysis have been studied. The X-ray diffraction (XRD) and selected area electron diffraction (SAED) results have shown that the kesterite phase of CMTS thin films has a maximum crystallite size of about 19.60 nm for 5% Ag/(Ag + Cu). Scanning electron microscopy (SEM) images have shown spherical grain shapes. The transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) microscopy observations confirmed the intrinsic reticular planes of CMTS thin film with (112) as a preferred orientation and interplanar spacing value of 3.1 Å. The optical properties showed high absorbance and an absorption coefficient of about 104 cm-1 in the visible region with an optical band gap energy of 1.51 eV. Impedance analysis spectroscopy demonstrated good electrical properties of the CMTS film obtained using 5% Ag/(Ag + Cu). The antibacterial activity of the undoped and Ag-doped particles of CMTS obtained using 5% Ag/(Ag + Cu) against different strains of pathogenic bacteria was tested using the agar well diffusion method. These results showed a significant antibacterial activity of the Ag-doped CMTS particle, which was much higher than the undoped CMTS particles. These experimental findings may open new practices for the Ag-doped CMTS compound, especially the one obtained using 5% Ag/(Ag + Cu), in antibacterial application.

Effect of Mg Doping on the Physical Properties of Fe2O3 Thin Films for Photocatalytic Devices.

Undoped and Mg-doped (y = [Mg2+]/[Fe3+] = 1, 2, 3, and 4 at.%) Fe2O3 thin films were synthesized by a simple spray pyrolysis technique. The thin films were extensively characterized. X-ray diffraction (XRD) and energy-dispersive spectroscopy (EDS) analysis confirmed the successful insertion of Mg in the rhombohedral structure of Fe2O3. In addition, scanning electronic microscope (SEM) and confocal microscope (CM) images showed a homogenous texture of the film, which was free of defects. The rough surface of the film obtained by spray pyrolysis is an important feature for photocatalysis and gas sensor applications. The direct band gap of the doped Fe2O3 films obtained for [Mg2+]/[Fe3+] = 3 at.% was Edir = 2.20 eV, which recommends the Mg-doped iron oxide as an optical window or buffer layer in solar cell devices. The photodegradation performance of Mg-doped Fe2O3 was assessed by studying the removal of methylene blue (MB) under sunlight irradiation, with an effective removal efficiency of 90% within 180 min. The excellent photodegradation activity was attributed to the strong absorption of Mg-doped Fe2O3 in the UV and most of the visible light, and to the effective separation of photogenerated charge carriers.

Improvement of Schottky Contacts of Gallium Oxide (Ga2O3) Nanowires for UV Applications.

Interest in the synthesis and fabrication of gallium oxide (Ga2O3) nanostructures as wide bandgap semiconductor-based ultraviolet (UV) photodetectors has recently increased due to their importance in cases of deep-UV photodetectors operating in high power/temperature conditions. Due to their unique properties, i.e., higher surface-to-volume ratio and quantum effects, these nanostructures can significantly enhance the sensitivity of detection. In this work, two Ga2O3 nanostructured films with different nanowire densities and sizes obtained by thermal oxidation of Ga on quartz, in the presence and absence of Ag catalyst, were investigated. The electrical properties influenced by the density of Ga2O3 nanowires (NWs) were analyzed to define the configuration of UV detection. The electrical measurements were performed on two different electric contacts and were located at distances of 1 and 3 mm. Factors affecting the detection performance of Ga2O3 NWs film, such as the distance between metal contacts (1 and 3 mm apart), voltages (5-20 V) and transient photocurrents were discussed in relation to the composition and nanostructure of the Ga2O3 NWs film.

Synthesis and Characterization of MgO Thin Films Obtained by Spray Technique for Optoelectronic Applications.

Magnesium oxide (MgO) thin films with different magnesium concentrations ([Mg2+] = 0.05, 0.1, 0.15 and 0.2 mol·L-1) in a spray solution have been successfully grown using a spray pyrolysis technique. X-ray diffraction (XRD), Maud software, FTIR spectroscopy, a confocal microscope, Wien2k software, spectrophotometry and a Photoluminescence spectrometer were used to investigate the structural, morphological and optical properties. XRD analysis revealed a better crystalline quality of the MgO thin layer synthesized with [Mg2+] = 0.15 mol·L-1, which crystallized into a face-centered cubic structure along the preferred orientation (200) lattice plan. The enhancement of the crystalline quality for the MgO thin film ([Mg2+] = 0.15 mol·L-1) was obtained, which was accompanied by an increment of 94.3 nm of the crystallite size. No secondary phase was detected and the purity phase of the MgO thin film was confirmed using Maud software. From the transmission spectra results, high transparent and antireflective properties of the MgO thin film were observed, with an average transmission value of about 91.48% in the visible range, which can be used as an optical window or buffer layer in solar cell applications. The films also have a high reflectance value in the IR range, which indicates that the highly reflective surface will prevent an increase in surface temperature under solar irradiation, which could be beneficial in solar cell applications. A direct band gap type was estimated using the Tauc relation which is close to the experimental value of 4.0 eV for optimal growth. The MgO material was tested for the degradation of methylene blue (MB), which reached a high photodegradation rate of about 83% after 180 min under sunlight illumination. These experimental trends open a new door for promising the removal of water contaminants for photocatalysis application.

Gallium oxide nanowires for UV detection with enhanced growth and material properties.

In the last decade, interest in the use of beta gallium oxide (ß-Ga2O3) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for these applications. Compared to thin films, nanowires exhibit a higher surface-to-volume ratio, increasing their sensitivity for detection of chemical substances and light. In this work, we explore a simple and inexpensive method of growing high-density gallium oxide nanowires at high temperatures. Gallium oxide nanowire growth can be achieved by heating and oxidizing pure gallium at high temperatures (~ 1000 °C) in the presence of trace amounts of oxygen. This process can be optimized to large-scale production to grow high-quality, dense and long Ga2O3 nanowires. We show the results of morphological, structural, electrical and optical characterization of the ß-Ga2O3 nanowires including the optical bandgap and photoconductance. The influence of density on these Ga2O3 nanowires and their properties will be examined in order to determine the optimum configuration for the detection of UV light.

An Investigation on the Synthesis of Molybdenum Oxide and Its Silica Nanoparticle Composites for Dye Degradation.

The molybdenum oxide (MoO3) and MoO3@SiO2 nanoparticles were successfully prepared using the chemical bath deposition (CBD) method. The photocatalytic activities of molybdenum oxide (MoO3), SiO2, and MoO3@SiO2 nanoparticles composite have shown a synergistic photocatalytic effect of SiO2 combined with MoO3. The first-order degradation rate constants for MoO3, SiO2, and MoO3@SiO2 nanocomposite were 10.3 × 10-3 min-1, 15.1 × 10-3 min-1, and 16.3 × 10-3 min-1, respectively. The MoO3@SiO2 composite showed degradation efficiencies in the methylene blue solution close to 100% after 60 min of UV irradiation. The X-ray diffraction (XRD) showed that the MoO3 powder has a hexagonal crystal structure and the silica is the tridymite type of SiO2. The crystallite size was about 94 nm, 32 nm, and 125 nm for MoO3, silica, and MoO3@SiO2, respectively, as calculated by the Scherrer equation. The scanning electron microscopy (SEM) images revealed that the MoO3 powder consisted of a uniform hexagonal structure; the silica showed a rod-like micro-flake morphology and the MoO3@SiO2 composite had the appearance of coral-like structures.

Influence of Silver as a Catalyst on the Growth of ß-Ga2O3 Nanowires on GaAs.

A simple and inexpensive thermal oxidation process was performed to synthesize gallium oxide (Ga2O3) nanowires using Ag thin film as a catalyst at 800 °C and 1000 °C to understand the effect of the silver catalyst on the nanowire growth. The effect of doping and orientation of the substrates on the growth of Ga2O3 nanowires on single-crystal gallium arsenide (GaAs) wafers in atmosphere were investigated. A comprehensive study of the oxide film and nanowire growth was performed using various characterization techniques including XRD, SEM, EDS, focused ion beam (FIB), XPS and STEM. Based on the characterization results, we believe that Ag thin film produces Ag nanoparticles at high temperatures and enhances the reaction between oxygen and gallium, contributing to denser and longer Ga2O3 nanowires compared to those grown without silver catalyst. This process can be optimized for large-scale production of high-quality, dense, and long nanowires.

Removal of Heavy Metals from Wastewaters: A Challenge from Current Treatment Methods to Nanotechnology Applications.

Removing heavy metals from wastewaters is a challenging process that requires constant attention and monitoring, as heavy metals are major wastewater pollutants that are not biodegradable and thus accumulate in the ecosystem. In addition, the persistent nature, toxicity and accumulation of heavy metal ions in the human body have become the driving force for searching new and more efficient water treatment technologies to reduce the concentration of heavy metal in waters. Because the conventional techniques will not be able to keep up with the growing demand for lower heavy metals levels in drinking water and wastewaters, it is becoming increasingly challenging to implement technologically advanced alternative water treatments. Nanotechnology offers a number of advantages compared to other methods. Nanomaterials are more efficient in terms of cost and volume, and many process mechanisms are better and faster at nanoscale. Although nanomaterials have already proved themselves in water technology, there are specific challenges related to their stability, toxicity and recovery, which led to innovations to counteract them. Taking into account the multidisciplinary research of water treatment for the removal of heavy metals, the present review provides an updated report on the main technologies and materials used for the removal of heavy metals with an emphasis on nanoscale materials and processes involved in the heavy metals removal and detection.

Nanobiosensors for the Detection of Novel Coronavirus 2019-nCoV and Other Pandemic/Epidemic Respiratory Viruses: A Review.

The coronavirus disease 2019 (COVID-19) pandemic is considered a public health emergency of international concern. The 2019 novel coronavirus (2019-nCoV) or severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) that caused this pandemic has spread rapidly to over 200 countries, and has drastically affected public health and the economies of states at unprecedented levels. In this context, efforts around the world are focusing on solving this problem in several directions of research, by: (i) exploring the origin and evolution of the phylogeny of the SARS-CoV-2 viral genome; (ii) developing nanobiosensors that could be highly effective in detecting the new coronavirus; (iii) finding effective treatments for COVID-19; and (iv) working on vaccine development. In this paper, an overview of the progress made in the development of nanobiosensors for the detection of human coronaviruses (SARS-CoV, SARS-CoV-2, and Middle East respiratory syndrome coronavirus (MERS-CoV) is presented, along with specific techniques for modifying the surface of nanobiosensors. The newest detection methods of the influenza virus responsible for acute respiratory syndrome were compared with conventional methods, highlighting the newest trends in diagnostics, applications, and challenges of SARS-CoV-2 (COVID-19 causative virus) nanobiosensors.

Comparative Study of Growth Morphologies of Ga2O3 Nanowires on Different Substrates.

Gallium oxide (Ga2O3) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of Ga2O3 nanostructures on different substrates and temperatures. We used silver catalysts to enhance the growth of Ga2O3 nanowires on substrates such as p-Si substrate doped with boron, 250 nm SiO2 on n-Si, 250 nm Si3N4 on p-Si, quartz, and n-Si substrates by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of liquid silver paste that served as a catalyst layer. We present the results of the morphological, structural, and elemental characterization of the Ga2O3 nanostructures. This work offers in-depth explanation of the dense, thin, and long Ga2O3 nanowire growth directly on the surfaces of various types of substrates using silver catalysts.

Physical Investigations of (Co, Mn) Co-Doped ZnO Nanocrystalline Films.

Undoped as well as (Co, Mn) co-doped Zinc oxides have been effectively developed on glass substrates, taking advantage of the spray pyrolysis procedure. The X-ray diffraction XRD as well as X-ray photoelectron spectroscopy (XPS) measurements have recognized a pure hexagonal wurtzite form of ZnO, and no other collateral phases such as MnO2 or CoO2 have been observed as a result of doping. The calculated values of the texture coefficient (TC) were between 0.15 and 5.14, indicating a dominant orientation along the (002) plane. The crystallite size (D) varies with the (Co, Mn) contents. The dislocation density (δ) as well as the residual microstrains increased after Co and Mn doping. Furthermore, the surface morphology of the films has been affected significantly by the Co and Mn incorporation, as shown by the scanning electron microscopy (SEM) investigation. The study of the optical properties exhibits a red shift of the band gap energy (Eg) with the (Co, Mn) co-doping. The magnetic measurements have shown that the undoped and (Co, Mn) co-doped ZnO thin films displayed room-temperature ferromagnetism (RTFM).

The Growth of Ga2O3 Nanowires on Silicon for Ultraviolet Photodetector.

We investigated the effect of silver catalysts to enhance the growth of Ga2O3 nanowires. The growth of Ga2O3 nanowires on a P+-Si (100) substrate was demonstrated by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of a thin silver film that serves as a catalyst layer. We present the results of morphological, compositional, and electrical characterization of the Ga2O3 nanowires, including the measurements on photoconductance and transient time. Our results show that highly oriented, dense and long Ga2O3 nanowires can be grown directly on the surface of silicon. The Ga2O3 nanowires, with their inherent n-type characteristics formed a pn heterojunction when grown on silicon. The heterojunction showed rectifying characteristics and excellent UV photoresponse.

Novel PDMS-Based Sensor System for MPWM Measurements of Picoliter Volumes in Microfluidic Devices.

In order for automatic microinjection to serve biomedical and genetic research, we have designed and manufactured a PDMS-based sensor with a circular section channel using the microwire molding technique. For the very precise control of microfluidic transport, we developed a microfluidic pulse width modulation system (MPWM) for automatic microinjections at a picoliter level. By adding a computer-aided detection and tracking of fluid-specific elements in the microfluidic circuit, the PDMS microchannel sensor became the basic element in the automatic control of the microinjection sensor. With the PDMS microinjection sensor, we precise measured microfluidic volumes under visual detection, assisted by very precise computer equipment (with precision below 1 µm) based on image processing. The calibration of the MPWM system was performed to increase the reproducibility of the results and to detect and measure microfluidic volumes. The novel PDMS-based sensor system for MPWM measurements of microfluidic volumes contributes to the advancement of intelligent control methods and techniques, which could lead to new developments in the design, control, and in applications of real-time intelligent sensor system control.

Dynamics Contributions to the Growth Mechanism of Ga2O3 Thin Film and NWs Enabled by Ag Catalyst.

In the last few years, interest in the use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored the effect of Ag thin film as a catalyst to grow gallium oxide. The growth of gallium oxide thin film and nanowires can be achieved by heating and oxidizing pure gallium at high temperatures (~1000 °C) in the presence of trace amounts of oxygen. We present the results of structural, morphological, and elemental characterization of the ß-Ga2O3 thin film and nanowires. In addition, we explore and compare the sensing properties of the ß-Ga2O3 thin film and nanowires for UV detection. The proposed process can be optimized to a high scale production Ga2O3 nanocrystalline thin film and nanowires. By using Ag thin film as a catalyst, we can control the growth parameters to obtain either nanocrystalline thin film or nanowires.