RESUMO
We have synthesized a new superconducting perovskite bismuth oxide by a facile hydrothermal route at 220 °C. The choice of starting materials, their mixing ratios, and the hydrothermal reaction temperature was crucial for obtaining products with superior superconducting properties. The structure of the powder sample was investigated using laboratory X-ray diffraction, high-resolution synchrotron X-ray diffraction (SXRD) data, and electron diffraction (ED) patterns [transmission electron microscopy (TEM) analysis]. The refinement of SXRD data confirmed a simple perovskite-type structure with a cubic cell of a = 4.27864(2) Å [space group Pm3Ì m (No. 221)]. Elemental analysis detected magnesium in the final products, and a refinement based on SXRD and inductively coupled plasma data yielded an ideal undistorted simple cubic perovskite-type structure, with the chemical composition (Ba0.62K0.38)(Bi0.92Mg0.08)O3. ED patterns also confirmed the simple cubic perovskite structure; the cube-shaped microstructures and compositional homogeneity on the nanoscale were verified by scanning electron microscopy and TEM analyses, respectively. The fabricated compound exhibited a large shielding volume fraction of about 98% with a maximum Tcmag of â¼30 K, which was supported by the measured bismuth valence as well. Its electrical resistivity dropped at â¼21 K, and zero resistivity was observed below 7 K. The compound underwent thermal decomposition above 400 °C. Finally, the calculated band structure showed a metallic behavior for this hydrothermally synthesized bismuth oxide.
RESUMO
[This corrects the article DOI: 10.1021/acsomega.6b00409.].
RESUMO
Rare earth Nd3+ ion-doped Ca12Al14O33 single crystals were grown at a rate of 1 mm/h by the floating zone technique in an oxygen atmosphere. The Nd concentration in the central area of the as-grown crystals was higher than that in the peripheral area due to the highly concave growth interface shape. The average Nd concentration in the as-prepared parallelepiped slices of â¼6 × 3 × 2 mm3 for electride fabrication was â¼0.093 ± 0.011 atom % Nd in contrast to the nominal 0.1 atom % Nd concentration. The Nd-doped C12A7:Nd single crystalline electride prepared by thermal treatment with a Ti metal at 1100 °C for 48 h induced an insulator-metal transition with the highest conductivity of approximately 1165 S/cm. These annealing conditions provide an approach to completely remove clathrated oxide ions from the crystallographic cages, leading to the formation of C12A7:Nd(e -) and C12A7:e - electrides with high-density electrons (â¼2.4 ± 0.2 × 1021 and â¼1.8 ± 0.1 × 1021 cm-3) localized in the cages. The carrier mobility at room temperature in C12A7:Nd(e -) was very similar to that in C12A7:e -, even though it was very high at temperatures below â¼150 K.
