Ultra-wideband Ge-rich silicon germanium mid-infrared polarization rotator with mode hybridization flattening.

In this work we investigate the implementation of ultra-wideband polarization rotator in the mid-infrared spectral region. A new design method of the rotation section is proposed, yielding a polarization rotator with an extinction ratio of at least 15 dB in a wavelength range of 2 µm. For a spectral range wider than 3.8 µm, an extinction ratio of at least 10 dB is achieved for this design. The device is 1660 µm long and the associated insertion loss is below 1.2 dB on the full operational wavelength range. The influence of geometrical parameters with respect to the design method to obtain such a broadband behavior is discussed. Finally, to increase the tolerance to fabrication errors, a tapered rotator design is proposed. Such a device can support up to ± 100 nm fabrication errors and still guarantees remarkable broadband behavior. To the best of our knowledge, this is the first time an integrated polarization rotator is designed to operate for the wavelength range of 4 to 9 µm with a bandwidth exceeding 2 µm.

Suspended silicon mid-infrared waveguide devices with subwavelength grating metamaterial cladding.

We present several fundamental photonic building blocks based on suspended silicon waveguides supported by a lateral cladding comprising subwavelength grating metamaterial. We discuss the design, fabrication, and characterization of waveguide bends, multimode interference devices and Mach-Zehnder interferometers for the 3715 - 3800 nm wavelength range, demonstrated for the first time in this platform. The waveguide propagation loss of 0.82 dB/cm is reported, some of the lowest loss yet achieved in silicon waveguides for this wavelength range. These results establish a direct path to ultimately extending the operational wavelength range of silicon wire waveguides to the entire transparency window of silicon.

Suspended SOI waveguide with sub-wavelength grating cladding for mid-infrared.

We present a new type of mid-infrared silicon-on-insulator (SOI) waveguide. The waveguide comprises a sub-wavelength lattice of holes acting as lateral cladding while at the same time allowing for the bottom oxide (BOX) removal by etching. The waveguide loss is determined at the wavelength of 3.8 µm for structures before and after being underetched using both vapor phase and liquid hydrofluoric acid (HF). A propagation loss of 3.4 dB/cm was measured for a design with a 300 nm grating period and 150 nm holes after partial removal (560 nm) of BOX by vapor phase HF etching. We also demonstrate an alternative design with 550 nm period and 450 nm holes, which allows a faster and complete removal of the BOX by liquid phase HF etching, yielding the waveguide propagation loss of 3.6 dB/cm.

Polarization-beam-splitter-less integrated dual-polarization coherent receiver.

Conventional dual-polarization coherent receivers require polarization beam splitters for either the signal or the local oscillator path. This severely hinders monolithic integration, since integrated polarization splitting devices often exhibit stringent fabrication tolerances. Here we propose a dual-polarization monolithically integrated coherent receiver architecture that completely avoids the use of polarization splitting elements. Polarization management is instead achieved by adequately engineering the birefringence of the interconnecting waveguides. The resultant receiver is highly tolerant to fabrication deviations and thus offers a completely new route for monolithic integration of dual-polarization receivers without any type of active tuning.

Fiber-chip grating coupler based on interleaved trenches with directionality exceeding 95.

We propose a fiber-chip grating coupler that interleaves the standard full and shallow etch trenches in a 220 nm thick silicon layer to provide a directionality upward exceeding 95%. By adjusting the separation between the two sets of trenches, constructive interference is achieved in the upward direction independent of the bottom oxide thickness and without any bottom reflectors, overlays, or customized etch depths. We implement a transverse subwavelength structure in the first two grating periods to minimize back-reflections. The grating coupler has a calculated coupling efficiency of CE~-1.05 dB with a 1 dB bandwidth of 30 nm and minimum feature size of 100 nm, compatible with deep-UV lithography.

Integrated polarization beam splitter with relaxed fabrication tolerances.

Polarization handling is a key requirement for the next generation of photonic integrated circuits (PICs). Integrated polarization beam splitters (PBS) are central elements for polarization management, but their use in PICs is hindered by poor fabrication tolerances. In this work we present a fully passive, highly fabrication tolerant polarization beam splitter, based on an asymmetrical Mach-Zehnder interferometer (MZI) with a Si/SiO(2) Periodic Layer Structure (PLS) on top of one of its arms. By engineering the birefringence of the PLS we are able to design the MZI arms so that sensitivities to the most critical fabrication errors are greatly reduced. Our PBS design tolerates waveguide width variations of 400nm maintaining a polarization extinction ratio better than 13dB in the complete C-Band.

Highly tolerant tunable waveguide polarization rotator scheme.

Integrated polarization rotators are known to exhibit stringent fabrication tolerances, which severely handicap their practical application. Here we present a general polarization rotator scheme that enables both the compensation of fabrication errors and wavelength tunability. The scheme is described analytically, and a condition for perfect polarization conversion is established. Simulations of a silicon-on-insulator polarization rotator show polarization extinction ratios in excess of 40 dB even in the presence of large fabrication errors that in a conventional rotator configuration degrade the extinction ratio to below 5 dB. Additionally, wavelength tuning over ±30 nm is shown.

Polarization-independent grating coupler for micrometric silicon rib waveguides.

Grating couplers are a promising approach to implement efficient fiber-chip coupling. However, their strong polarization dependence makes dual-polarization operation challenging. In this Letter we propose, for the first time, a polarization-independent grating coupler for thick rib silicon-on-insulator (SOI) waveguides. Coupling efficiency is optimized by designing the grating pitch and duty cycle, without varying the bottom oxide thickness, which significantly simplifies practical implementation. Directivity of the grating coupler is enhanced by a high reflectivity layer under the bottom oxide after the selective removal of the Si substrate. Dual-polarization coupling efficiency of -2.8 dB is shown.

Polarization rotator for InP rib waveguide.

A polarization rotator, suitable for integration in a polarization diversity optical receiver fabricated in InP technology, is proposed. The device, based on a two steps waveguide rotator, includes tapered input and output ports that provide very low insertion loss (<0.04 dB). An extinction ratio of 40 dB at 1550 nm wavelength is calculated, comparable or even superior to other state of the art polarization converters. The main advantage of the proposed design is the capability of implementation using a standard fabrication process with only two dry etch steps, significantly reducing complexity and cost.

Single-etch grating coupler for micrometric silicon rib waveguides.

Grating couplers are widely used as an efficient and versatile fiber-chip coupling structure in nanometric silicon wire waveguides. The implementation of efficient grating couplers in micrometric silicon-on-insulator (SOI) rib waveguides is, however, challenging, since the coupler waveguide region is multimode. Here we experimentally demonstrate grating couplers in 1.5 µm-thick SOI rib waveguides with a coupling efficiency of -2.2 dB and a 3 dB bandwidth of 40 nm. An inverse taper is used to adiabatically transform the interconnection waveguide mode to the optimum grating coupler excitation field with negligible higher order Bloch mode excitation. Couplers are fabricated in the same etch step as the waveguides using i-line stepper lithography. The benefits of wafer-scale testing and device characterization without facet preparation are thus attained at no additional cost.

Efficient fiber-to-chip grating coupler for micrometric SOI rib waveguides.

Grating couplers are an efficient means for fiber to chip coupling, as they require no facet preparation and enable wafer scale testing. While grating couplers are commonly used in silicon wire waveguides, their application to micrometric silicon-on-insulator rib waveguides is complicated due to the presence of high-order Bloch modes. We study the Bloch modes behavior and their excitation determined by access waveguide design. The latter is implemented to enable single Bloch mode excitation. The use of a design process based on modal analysis is proposed. A grating coupler is proposed in silicon-on-insulator with 1.5 microm thick silicon layer that achieves a coupling efficiency of 65.6% at 1.55 microm. The structure, including interconnection waveguides, access waveguide and grating can be fabricated using a single lithography step.