Nano antenna-assisted quantum dots emission into high-index planar waveguide.

Integrated quantum photonic circuits require the efficient coupling of photon sources to photonic waveguides. Hybrid plasmonic/photonic platforms are a promising approach, taking advantage of both plasmon modal confinement for efficient coupling to a nearby emitter and photonic circuitry for optical data transfer and processing. In this work, we established directional quantum dot (QD) emission coupling to a planar TiO2waveguide assisted by a Yagi-Uda antenna. Antenna on waveguide is first designed by scaling radio frequency dimensions to nano-optics, taking into account the hybrid plasmonic/photonic platform. Design is then optimized by full numerical simulations. We fabricate the antenna on a TiO2planar waveguide and deposit a few QDs close to the Yagi-Uda antenna. The optical characterization shows clear directional coupling originating from antenna effect. We estimate the coupling efficiency and directivity of the light emitted into the waveguide.

Correlation between electrical direct current resistivity and plasmonic properties of CMOS compatible titanium nitride thin films.

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 µm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16µm as the resistivity of the layers increases from 28 to 130µΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ellipsometry experiments. By probing a parametric space of realistic values for parameters of the Drude model, we obtain a nearly univocal dependence of the surface plasmon damping distance on the dc resistivity demonstrating the relevance of dc resistivity for the evaluation of the plasmonic performances of TiN at telecom frequencies. Finally, we show that better plasmonic performances are obtained for TiN films featuring a low content of oxygen. For low oxygen content and corresponding low resistivity, we attribute the increase of the surface plasmon damping distances to a lower confinement of the plasmon field into the metal and not to a decrease of the absorption of TiN.

Characterization of CMOS metal based dielectric loaded surface plasmon waveguides at telecom wavelengths.

Dielectric loaded surface plasmon waveguides (DLSPPWs) comprised of polymer ridges deposited on top of CMOS compatible metal thin films are investigated at telecom wavelengths. We perform a direct comparison of the properties of copper (Cu), aluminum (Al), titanium nitride (TiN) and gold (Au) based waveguides by implementing the same plasmonic waveguiding configuration for each metal. The DLSPPWs are characterized by leakage radiation microscopy and a fiber-to-fiber configuration mimicking the cut-back method. We introduce the ohmic loss rate (OLR) to analyze quantitatively the properties of the CMOS metal based DLSPPWs relative to the corresponding Au based waveguides. We show that the Cu, Al and TiN based waveguides feature extra ohmic loss compared to Au of 0.027 dB/µm, 0.18 dB/µm and 0.52 dB/µm at 1550nm respectively. The dielectric function of each metal extracted from ellipsometric spectroscopic measurements is used to model the properties of the DLSP-PWs. We find a fairly good agreement between experimental and modeled DLSPPWs properties except for Al featuring a large surface roughness. Finally, we conclude that TiN based waveguides sustaining intermediate effective index (in the range 1.05-1.25) plasmon modes propagate over very short distances restricting the the use of those modes in practical situations.

Electrical excitation of waveguided surface plasmons by a light-emitting tunneling optical gap antenna.

We introduce a new type of electroplasmonic interfacing component to electrically generate surface plasmons. Specifically, an electron-fed optical tunneling gap antenna is integrated on a plasmonic waveguiding platform. When electrical charges are injected in the tunneling barrier of the gap antenna, a broad-band radiation is emitted from the feed area by a process identified as a thermal emission of hot electrons. Part of the emitted photons couples to surface plasmon modes sustained by the waveguide geometry. The transducing optical antenna is thus acting as a localized electrical source of surface plasmon polaritons. The integration of electrically-activated optical antennas into a plasmonic architecture mitigates the need for complex coupling scheme and proposes a solution for realizing nanoscale units at the interface between nano-electronics and photonics.

Electrical excitation of surface plasmons by an individual carbon nanotube transistor.

We demonstrate here the realization of an integrated, electrically driven, source of surface plasmon polaritons. Light-emitting individual single-walled carbon nanotube field effect transistors were fabricated in a plasmonic-ready platform. The devices were operated at ambient conditions to act as an electroluminescence source localized near the contacting gold electrodes. We show that photon emission from the semiconducting channel can couple to propagating surface plasmons developing in the electrical terminals. Our results show that a common functional element can be operated for two different platforms emphasizing thus the high degree of compatibility between state-of-the-art nano-optoelectronics devices and a plasmonic architecture.