Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements.

Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary metal-oxide-semiconductor technology roadmap. Presently, the search for electrically active defects, in terms of both their density of energy states and their spatial distribution, has turned out to be of paramount importance in synthetic transition metal dichalcogenides layers, as they are suspected of severely inhibiting these devices from achieving their highest performance. Although advanced microscopy tools have allowed the direct detection of physical defects such as grain boundaries and point defects, their implementation at the device scale to assess the active defect distribution and their impact on field-induced channel charge modulation and current transport is strictly restrained. Therefore, it becomes critical to directly probe the gate modulation effect on the carrier population at the nanoscale of an FET channel, with the objective to establish a direct correlation with the device characteristics. Here, we have investigated the active channel in a monolayer MoS2 FET through in situ scanning probe microscopy, namely, Kelvin probe force microscopy and scanning capacitance microscopy, to directly identify active defect sites and to improve our understanding of the contribution of grain boundaries, bilayer islands, and defective grain domains to channel conductance.

Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor Circuits.

Large-area 2D-material-based devices may find applications as sensor or photonics devices or can be incorporated in the back end of line (BEOL) to provide additional functionality. The introduction of highly scaled 2D-based circuits for high-performance logic applications in production is projected to be implemented after the Si-sheet-based CFET devices. Here, a view on the requirements needed for full wafer integration of aggressively scaled 2D-based logic circuits, the status of developments, and the definition of the gaps to be bridged is provided. Today, typical test vehicles for 2D devices are single-sheet devices fully integrated in a lab environment, but transfer to a more scaled device in a fab environment has been demonstrated. This work reviews the status of the module development, including considerations for setting up fab-compatible process routes for single-sheet devices. While further development on key modules is still required, substantial progress is made for MX2 channel growth, high-k dielectric deposition, and contact engineering. Finally, the process requirements for building ultra-scaled stacked nanosheets are also reflected on.

Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics.

In view of its epitaxial seeding capability, c-plane single crystalline sapphire represents one of the most enticing, industry-compatible templates to realize manufacturable deposition of single crystalline two-dimensional transition metal dichalcogenides (MX2) for functional, ultrascaled, nanoelectronic devices beyond silicon. Despite sapphire being atomically flat, the surface topography, structure, and chemical termination vary between sapphire terraces during the fabrication process. To date, it remains poorly understood how these sapphire surface anomalies affect the local epitaxial registry and the intrinsic electrical properties of the deposited MX2 monolayer. Therefore, molybdenum disulfide (MoS2) is deposited by metal-organic chemical vapor deposition (MOCVD) in an industry-standard epitaxial reactor on two types of c-plane sapphire with distinctly different terrace and step dimensions. Complementary scanning probe microscopy techniques reveal an inhomogeneous conductivity profile in the first epitaxial MoS2 monolayer on both sapphire templates. MoS2 regions with poor conductivity correspond to sapphire terraces with uncontrolled topography and surface structure. By intentionally applying a substantial off-axis cut angle (1° in this work), the sapphire terrace width and step height-and thus also surface structure-become more uniform across the substrate and MoS2 conducts the current more homogeneously. Moreover, these effects propagate into the extrinsic MoS2 device performance: the field-effect transistor variability reduces both within and across wafers at higher median electron mobility. Carefully controlling the sapphire surface topography and structure proves an essential prerequisite to systematically study and control the MX2 growth behavior and capture the influence on its structural and electrical properties.

Impact of device scaling on the electrical properties of MoS2 field-effect transistors.

Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS2 material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 µS/µm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS2 transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. Finally, using a power performance area (PPA) analysis, we present a roadmap of material improvements to make 2D devices competitive with silicon gate-all-around devices.

Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key.

2D materials offer a pathway for further scaling of CMOS technology. However, for this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same (standard) material. In the specific case of MoS2 field effect transistors (FETs), ambipolar transport is seldom reported, primarily due to the phenomenon of Fermi level pinning (FLP). In this study we identify the possible sources of FLP in MoS2 FETs and resolve them individually. A novel contact transfer technique is used to transfer contacts on top of MoS2 flake devices that results in a significant increase in the hole branch of the transfer characteristics as compared to conventionally fabricated contacts. We hypothesize that the pinning not only comes from the contact-MoS2 interface, but also from the MoS2-substrate interface. We confirm this by shifting to an hBN substrate which leads to a 10 fold increase in the hole current compared to the SiO2 substrate. Furthermore, we analyse MoS2 FETs of different channel thickness on three different substrates, SiO2, hBN and Al2O3, by correlating the p-branch I ON/I OFF to the position of oxide defect band in these substrates. FLP from the oxide is reduced in the case of Al2O3 which enables us to observe ambipolar transport in a bilayer MoS2 FET. These results highlight that MoS2 is indeed an ambipolar material, and the absence of ambipolar transport in MoS2 FETs is strongly correlated to its dielectric environment and processing conditions.

5 × 25 Gbit/s WDM transmitters based on passivated graphene-silicon electro-absorption modulators.

Today, one of the key challenges of graphene devices is establishing fabrication processes that can ensure performance stability and repeatability and that can eventually enable production in high volumes. In this paper, we use up-scalable fabrication processes to demonstrate three five-channel wavelength-division multiplexing (WDM) transmitters, each based on five graphene-silicon electro-absorption modulators. A passivation-first approach is used to encapsulate graphene, which results in hysteresis-free and uniform performance across the five channels of each WDM transmitter, for a total of 15 modulators. Open-eye diagrams are obtained at 25 Gb/s using $ 2.5\;{{\rm V}_{{\rm pp}}} $2.5Vpp, thus demonstrating potential for multi-channel data transmission at ${5}\times {25}\;{\rm Gb/s}$5×25Gb/s on each of the three WDM transmitters.

Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides.

In this paper, we explore the impact of changing the growth conditions on the substrate surface during the metal-organic vapor phase epitaxy of 2D-transition metal dichalcogenides. We particularly study the growth of molybdenum disulfide (MoS2) on sapphire substrates at different temperatures. We show that a high temperature leads to a perfect epitaxial alignment of the MoS2 layer with respect to the sapphire substrate underneath, whereas a low temperature growth induces a 30° epitaxial alignment. This behavior is found to be related to the different sapphire top surface re-arrangement under H2S environment at different growth temperatures. Structural analyses conducted on the different samples confirm an improved layer quality at high temperatures. MoS2 channel-based metal-oxide-semiconductor field-effect transistors are fabricated showing improved device performance with channel layers grown at high temperature.

Quadratic and Cubic Optical Nonlinearities of Y-Shaped and Distorted-H-Shaped Arylalkynylruthenium Complexes.

Straightforward syntheses of bis[bis{1,2-bis(diphenylphosphino)ethane}ruthenium]-functionalized 1,3,5-triethynylbenzene-cored complexes via a methodology employing "steric control" permit facile formation of Y-shaped Sonogashira coupling products and distorted-H-shaped homo-coupled quadrupolar products. Cyclic voltammetric data from these products reveal two reversible metal alkynyl-localized oxidation processes for all complexes. The wavelengths of the linear optical absorption maxima are dominated by the nature of the peripheral alkynyl ligand rather than the substituent at the unique arm of the "Y" or at the quadrupolar complex "core". The quadratic optical nonlinearities of the Y-shaped complexes were assessed by the hyper-Rayleigh scattering technique at 800 nm and employing 100 fs light pulses; introduction of donor NEt2 and/or acceptor NO2 to the wedge periphery resulted in non-zero nonlinearities, with the largest ßHRS,800 values being observed for the complexes containing the 4-nitrophenylalkynyl ligands. Depolarization ratios are consistent with substantial off-diagonal first hyperpolarizability tensor components and 2D nonlinear character. Computational studies employing time-dependent density functional theory have been employed to assign the key low-energy transitions in the linear optical spectra and to compute the quadratic nonlinear optical tensorial components. Cubic optical nonlinearities of the quadrupolar complexes were assessed by the Z-scan technique over the range 500-1600 nm and employing 130 fs light pulses; two-photon absorption cross-sections for these distorted-H-shaped complexes are moderate to large in value (up to 5500 GM at 880 nm), while one example displays significant three-photon absorption (1300×10-80  cm6 s2 at 1200 nm).

Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity.

The rapid cadence of MOSFET scaling is stimulating the development of new technologies and accelerating the introduction of new semiconducting materials as silicon alternative. In this context, 2D materials with a unique layered structure have attracted tremendous interest in recent years, mainly motivated by their ultra-thin body nature and unique optoelectronic and mechanical properties. The development of scalable synthesis techniques is obviously a fundamental step towards the development of a manufacturable technology. Metal-organic chemical vapor deposition has recently been used for the synthesis of large area TMDs, however, an important milestone still needs to be achieved: the ability to precisely control the number of layers and surface uniformity at the nano-to micro-length scale to obtain an atomically flat, self-passivated surface. In this work, we explore various fundamental aspects involved in the chemical vapor deposition process and we provide important insights on the layer-dependence of epitaxial MoS2 film's structural properties. Based on these observations, we propose an original method to achieve a layer-controlled epitaxy of wafer-scale TMDs.

Highly efficient and stable MoS2 FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating.

Despite rapid progress in 2D molybdenum disulfide (MoS2) research in recent years, MoS2 field-effect transistors (FETs) still suffer from a high metal-to-MoS2 contact resistance and low intrinsic mobility, which are major hindrances to their future application. We report an efficient technique to dope thin-film MoS2 FETs using a poly(vinyl-alcohol) (PVA) polymeric coating. This results in a reduction of the contact resistance by up to 30% as well as a reduction in the channel resistance to 20 kΩ sq-1. Using a dehydration process, we were able to effectively control the surface interactions between MoS2 and the more electropositive hydroxyl groups (-OH) of PVA, which provided a controllable and yet reversible increase in the charge carrier density to a value of 8.0 × 1012 cm-2. The non-covalent, thus non-destructive, PVA doping of MoS2 increases the carrier concentration without degrading the mobility, which shows a monotonic increase while enhancing the doping effect. The PVA doping technique is then exploited to create heavily doped access regions to the intrinsic MoS2 channel, which yields 200% increase of the ON-state source-drain current. This establishes PVA doping as an effective approach to enhance the transport properties of MoS2 FETs for a variety of applications.

Tunable doping of graphene by using physisorbed self-assembled networks.

One current key challenge in graphene research is to tune its charge carrier concentration, i.e., p- and n-type doping of graphene. An attractive approach in this respect is offered by controlled doping via well-ordered self-assembled networks physisorbed on the graphene surface. We report on tunable n-type doping of graphene using self-assembled networks of alkyl-amines that have varying chain lengths. The doping magnitude is modulated by controlling the density of the strong n-type doping amine groups on the surface. As revealed by scanning tunneling and atomic force microscopy, this density is governed by the length of the alkyl chain which acts as a spacer within the self-assembled network. The modulation of the doping magnitude depending on the chain length was demonstrated using Raman spectroscopy and electrical measurements on graphene field effect devices. This supramolecular functionalization approach offers new possibilities for controlling the properties of graphene and other two-dimensional materials at the nanoscale.

Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides.

Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.

Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications.

In this article, we present the simulation, fabrication, and characterization of a novel bilayer graphene field-effect transistor exhibiting electron mobility up to ~1600 cm(2) V(-1) s(-1), a room temperature I on/I off ≈ 60, and the lowest total charge (~10(11) cm(-2)) reported to date. This is achieved by combined electrostatic and chemical doping of bilayer graphene, which enables one to switch off the device at zero top-gate voltage. Using density functional theory and atomistic simulations, we obtain physical insight into the impact of chemical and electrostatic doping on bandgap opening of bilayer graphene and the effect of metal contacts on the operation of the device. Our results represent a step forward in the use of bilayer graphene for high-performance logic devices in the beyond-complementary metal-oxide-semiconductor (CMOS) technology paradigm.

Synthesis of charged bis-heteroaryl donor-acceptor (D-A+) NLO-phores coupling (π-deficient-π-excessive) heteroaromatic rings.

Charged chromophores based on heteroaromatic cations were prepared by reaction of alkylazinium salts with N-heteroarylstannanes under Stille conditions. This approach provides easy access to potential single donor D-A(+) chromophores in which the acceptor moiety A(+) is the pyridinium cation and the donors are different π-excessive N-heterocycles. The ß hyperpolarizabilities were measured in hyper-Rayleigh scattering experiments and the experimental data are supported by a theoretical analysis that combines a variety of computational procedures, including density functional theory and correlated Hartree-Fock-based methods. In some chromophores, the absence of a bridge between donor and acceptor fragments increases the NLO properties.

Computational de novo design and characterization of a protein that selectively binds a highly hyperpolarizable abiological chromophore.

This work reports the first example of a single-chain protein computationally designed to contain four α-helical segments and fold to form a four-helix bundle encapsulating a supramolecular abiological chromophore that possesses exceptional nonlinear optical properties. The 109-residue protein, designated SCRPZ-1, binds and disperses an insoluble hyperpolarizable chromophore, ruthenium(II) [5-(4'-ethynyl-(2,2';6',2″-terpyridinyl))-10,20-bis(phenyl)porphinato]zinc(II)-(2,2';6',2″-terpyridine)(2+) (RuPZn) in aqueous buffer solution at a 1:1 stoichiometry. A 1:1 binding stoichiometry of the holoprotein is supported by electronic absorption and circular dichroism spectra, as well as equilibrium analytical ultracentrifugation and size exclusion chromatography. SCRPZ-1 readily dimerizes at micromolar concentrations, and an empirical redesign of the protein exterior produced a stable monomeric protein, SCRPZ-2, that also displayed a 1:1 protein:cofactor stoichiometry. For both proteins in aqueous buffer, the encapsulated cofactor displays photophysical properties resembling those exhibited by the dilute RuPZn cofactor in organic solvent: femtosecond, nanosecond, and microsecond time scale pump-probe transient absorption spectroscopic data evince intensely absorbing holoprotein excited states having large spectral bandwidth that penetrate deep in the near-infrared energy regime; the holoprotein electronically excited triplet state exhibits a microsecond time scale lifetime characteristic of the RuPZn chromophore. Hyper-Rayleigh light scattering measurements carried out at an incident irradiation wavelength of 1340 nm for these holoproteins demonstrate an exceptional dynamic hyperpolarizabilty (ß1340 = 3100 × 10(-30) esu). X-ray reflectivity measurements establish that this de novo-designed hyperpolarizable protein can be covalently attached with high surface density to a silicon surface without loss of the cofactor, indicating that these assemblies provide a new approach to bioinspired materials that have unique electro-optic functionality.

Toward tunable doping in graphene FETs by molecular self-assembled monolayers.

In this paper, we report the formation of self-assembled monolayers (SAMs) of oleylamine (OA) on highly oriented pyrolytic graphite (HOPG) and graphene surfaces and demonstrate the potential of using such organic SAMs to tailor the electronic properties of graphene. Molecular resolution Atomic Force Microscopy (AFM) and Scanning Tunneling Microscopy (STM) images reveal the detailed molecular ordering. The electrical measurements show that OA strongly interacts with graphene leading to n-doping effects in graphene devices. The doping levels are tunable by varying the OA deposition conditions. Importantly, neither hole nor electron mobilities are decreased by the OA modification. As a benefit from this noncovalent modification strategy, the pristine characteristics of the device are recoverable upon OA removal. From this study, one can envision the possibility to correlate the graphene-based device performance with the molecular structure and supramolecular ordering of the organic dopant.

Testing computational models of hyperpolarizability in a merocyanine dye using spectroscopic and DFT methods.

The structural and electronic properties of a highly solvatochromic merocyanine dye, 2-(3-cyano-5,5-dimethyl-4-(3-(1-octadecylpyridin-4(1H)-ylidene)prop-1-enyl)furan-2(5H)-ylidene)malononitrile (pyr3pi), have been investigated using UV-vis, NMR, hyper-Rayleigh scattering, and Raman spectroscopies and further interpreted using computational chemistry. Spectroscopic data indicate that pyr3pi exists in its zwitterionic form even in low polarity solvents with electronic absorption spectra showing a hypsochromic shift with an increase in solvent polarity and NMR experiments indicating an increasingly zwitterionic structure in chloroform as the temperature is lowered. Raman spectra in increasingly polar solvents show small variations of the structure that are consistent with a change toward a structure with more zwitterionic character. However, comparison of the calculated and experimental vibrational energies and intensities and comparison of NMR coupling constants with calculated bond order indicate that calculations underestimate the amount of charge separation seen in low polarity solvents. Although for this system density functional theory (DFT) calculations and the two-state model qualitatively reproduce negative solvatochromism, they fail to reproduce the trends in hyperpolarizability seen experimentally. This is attributed to solvent field DFT calculations underestimating the degree of charge separation in reaction fields representing low polarity solvents.

Donor-(π-bridge)-azinium as D-π-A+ one-dimensional and D-π-A(+)-π-D multidimensional V-shaped chromophores.

Heteroaromatic cations reacted with N-heteroarylacetylenes under Sonogashira conditions to allow easy access to potential single donor D-π-A(+) and V-shaped D-π-A(+)-π-D chromophores, where the acceptor moiety A is the π-deficient pyridinium cation and the donor moiety is represented by different π-excessive N-heterocycles. The ß hyperpolarizabilities were measured using hyper-Rayleigh scattering experiments and the experimental data are supported by a theoretical analysis that combines a variety of computational procedures, including Density Functional Theory (DFT) and correlated Hartree-Fock-based methods (RCIS(D)).

Incorporation of amphiphilic ruthenium(II) ammine complexes into Langmuir-Blodgett thin films with switchable quadratic nonlinear optical behavior.

Nine nonlinear optical (NLO) chromophores with pyridinium electron acceptors have been synthesized by complexing new proligands with {Ru(II)(NH(3))(5)}(2+) electron-donor centers. The presence of long alkyl/fluoroalkyl chain substituents imparts amphiphilic properties, and these cationic complexes have been characterized as their PF(6)(-) salts by using various techniques including electronic absorption spectroscopy and cyclic voltammetry. Each complex shows three reversible/quasireversible redox processes; a Ru(III/II) oxidation and two ligand-based reductions. The energies of the intense visible d → π* metal-to-ligand charge-transfer (MLCT) absorptions correlate to some extent with the ligand reduction potentials. (1)H NMR spectroscopy also provides insights into the relative electron-withdrawing strengths of the new ligands. Single crystal X-ray structures have been determined for two of the proligand salts and one complex salt, [Ru(II)(NH(3))(5)(4-C(16)H(33)PhQ(+))]Cl(3)·3.25H(2)O (PhQ(+) = N-phenyl-4,4'-bipyridinium), showing centrosymmetric packing structures in each case. The PF(6)(-) analogue of the latter complex has been used to deposit reproducibly high-quality, multilayered Langmuir-Blodgett (LB) thin films. These films show a strong second harmonic generation (SHG) response from a 1064 nm laser; their MLCT absorbance increases linearly with the number of layers (N) and I(2ω)/I(ω)(2) (I(2ω) = intensity at 532 nm; I(ω) = intensity at 1064 nm) scales quadratically with N, consistent with homogeneous deposition. LB films on indium tin oxide (ITO)-coated glass show electrochemically induced switching of the SHG response, with a decrease in activity of about 50% on Ru(II) → Ru(III) oxidation. This effect is reversible, but reproducible over only a few cycles before the signal from the Ru(II) species diminishes. This work extrapolates our original solution studies (Coe, B. J. et al. Angew. Chem., Int. Ed.1999, 38, 366) to the first demonstration of redox-switching of NLO activity in a molecular material.

Interchromophoric interactions in chiral X-type π-conjugated oligomers: a linear and nonlinear optical study.

A concept of chiral, X-type organized π-conjugated oligomers, linked by means of a binaphthalene pincer, is presented. NMR spectroscopy and cyclic and differential pulse voltammetry indicate that these oligomers are in close proximity and influence each other in a through-space manner in their neutral as well as in their oxidized states. The interaction between the oligomers was also confirmed by UV-vis, CD, and emission spectroscopy. The synthetic versatility of this design also enables the development of heterocoupled binaphthalene derivatives BN1-2 and BN1-3, consisting of an electron-neutral oligothiophene or electron-rich oligomer and an electron-poor oligothiazole. Hyper-Rayleigh scattering data show a significant enhancement of the second-order nonlinear hyperpolarizability ß for BN1-3 and BN1-2, in contrast with the homocoupled binaphthalene derivatives (BN1-1, BN2-2, and BN3-3). This enhancement provides direct proof for the through-space charge-transfer interaction between the p-type and the n-type oligomers within BN1-3 and BN1-2.