Optical properties and carrier dynamics in Co-doped ZnO nanorods.

The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic% in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-to-current conversion efficiency (IPCE). Analysis indicates the crucial role of surface defects in determining the electronic behavior. Significantly, Co-doping extends the light absorption of the nanorods into the visible region, increases the surface defects, and shortens the non-radiative lifetimes, while leaving the radiative lifetime constant. Furthermore, for 1 atomic% Co-doping the IPCE of the ZnO nanorods is enhanced. These results demonstrate that doping can controllably tune the functional electronic properties of ZnO nanorods for applications.

Cobalt-Doped ZnO Nanorods Coated with Nanoscale Metal-Organic Framework Shells for Water-Splitting Photoanodes.

Developing highly efficient and stable photoelectrochemical (PEC) water-splitting electrodes via inexpensive, liquid phase processing is one of the key challenges for the conversion of solar energy into hydrogen for sustainable energy production. ZnO represents one the most suitable semiconductor metal oxide alternatives because of its high electron mobility, abundance, and low cost, although its performance is limited by its lack of absorption in the visible spectrum and reduced charge separation and charge transfer efficiency. Here, we present a solution-processed water-splitting photoanode based on Co-doped ZnO nanorods (NRs) coated with a transparent functionalizing metal-organic framework (MOF). The light absorption of the ZnO NRs is engineered toward the visible region by Co-doping, while the MOF significantly improves the stability and charge separation and transfer properties of the NRs. This synergetic combination of doping and nanoscale surface functionalization boosts the current density and functional lifetime of the photoanodes while achieving an unprecedented incident photon to current efficiency (IPCE) of 75% at 350 nm, which is over 2 times that of pristine ZnO. A theoretical model and band structure for the core-shell nanostructure is provided, highlighting how this nanomaterial combination provides an attractive pathway for the design of robust and highly efficient semiconductor-based photoanodes that can be translated to other semiconducting oxide systems.

Controlling the growth of single crystal ZnO nanowires by tuning the atomic layer deposition parameters of the ZnO seed layer.

Semiconducting nanowires (NWs) offer exciting prospects for a wide range of technological applications. The translation of NW science into technology requires reliable high quality large volume production. This study provides an in-depth investigation of the parameters using an atomic layer deposition system to grow zinc oxide (ZnO) seed layers followed by the chemical bath deposition (CBD) of ZnO NWs to demonstrate the low-cost production of uniform single crystal wurtzite phase ZnO NWs that is scalable to large area substrates. The seed layer texture and the morphology of the NWs grown were systematically investigated using atomic force microscopy as a function of the seed layer deposition parameters. It is shown that the NWs growth orientation can be controlled by tuning the seed layer deposition parameters while maintaining the same CBD conditions. Likewise, the diameters and the surface densities of the NWs varied from 23 to 56 nm and 40 to 327 NWs µm-2, respectively. Significantly, the relationship between the seed layer structure and the NW density indicates a clear correlation between the density of seed layer surface features and the resulting surface NW density of NWs grown.

Tunable Magnetization Dynamics in Interfacially Modified Ni81Fe19/Pt Bilayer Thin Film Microstructures.

Interface modification for control of ultrafast magnetic properties using low-dose focused ion beam irradiation is demonstrated for bilayers of two technologically important materials: Ni81Fe19 and Pt. Magnetization dynamics were studied using an all-optical time-resolved magneto-optical Kerr microscopy method. Magnetization relaxation, precession, damping and the spatial coherence of magnetization dynamics were studied. Magnetization precession was fitted with a single-mode damped sinusoid to extract the Gilbert damping parameter. A systematic study of the damping parameter and frequency as a function of irradiation dose varying from 0 to 3.3 pC/µm(2) shows a complex dependence upon ion beam dose. This is interpreted in terms of both intrinsic effects and extrinsic two-magnon scattering effects resulting from the expansion of the interfacial region and the creation of a compositionally graded alloy. The results suggest a new direction for the control of precessional magnetization dynamics, and open the opportunity to optimize high-speed magnetic devices.

Temperature dependence of electrical transport in a pressure-sensitive nanocomposite.

Printed nanocomposites are of significant application potential in numerous technologies, such as touch-sensitive sensors and surfaces. Here, temperature dependent electrical transport measurements were undertaken on a recently developed screen-printed, multicomponent, nanocomposite ink to develop a detailed understanding of the electrical transport mechanisms. A theoretical model combining contributions from linear percolative conduction and nonlinear conduction attributed to field-assisted quantum tunneling successfully describes the temperature dependent conduction observed.

A multi-component nanocomposite screen-printed ink with non-linear touch sensitive electrical conductivity.

Printable electronics is an innovative area of technology with great commercial potential. Here, a screen-printed functional ink, comprising a combination of semiconducting acicular particles, electrically insulating nanoparticles and a base polymer ink, is described that exhibits pronounced pressure sensitive electrical properties for applications in sensing and touch sensitive surfaces. The combination of these components in the as-printed ink yield a complex structure and a large and reproducible touch pressure sensitive resistance range. In contrast to the case for some composite systems, the resistance changes occur down to applied pressures of 13 Pa. Current-voltage measurements at fixed pressures show monotonic non-linear behaviour, which becomes more Ohmic at higher pressures and in all cases shows some hysteresis. The physical basis for conduction, particularly in the low pressure regime, can be described in terms of field assisted quantum mechanical tunnelling.

Forgery: 'fingerprinting' documents and packaging.

We have found that almost all paper documents, plastic cards and product packaging contain a unique physical identity code formed from microscopic imperfections in the surface. This covert 'fingerprint' is intrinsic and virtually impossible to modify controllably. It can be rapidly read using a low-cost portable laser scanner. Most forms of document and branded-product fraud could be rendered obsolete by use of this code.

Magnetic domain-wall dynamics in a submicrometre ferromagnetic structure.

As fabrication technology pushes the dimensions of ferromagnetic structures into the nanoscale, understanding the magnetization processes of these structures is of fundamental interest, and key to future applications in hard disk drives, magnetic random access memory and other 'spintronic' devices. Measurements on elongated magnetic nanostructures highlighted the importance of nucleation and propagation of a magnetic boundary, or domain wall, between opposing magnetic domains in the magnetization reversal process. Domain-wall propagation in confined structures is of basic interest and critical to the performance of a recently demonstrated magnetic logic scheme for spintronics. A previous study of a 500-nm-wide NiFe structure obtained very low domain-wall mobility in a three-layer device. Here we report room-temperature measurements of the propagation velocity of a domain wall in a single-layer planar Ni80Fe20 ferromagnetic nanowire 200 nm wide. The wall velocities are extremely high and, importantly, the intrinsic wall mobility is close to that in continuous films, indicating that lateral confinement does not significantly affect the gyromagnetic spin damping parameter to the extreme extent previously suggested. Consequently the prospects for high-speed domain-wall motion in future nanoscale spintronic devices are excellent.