Enhanced thermoelectric properties of self-assembling ZnO nanowire networks encapsulated in nonconductive polymers.

The near-room temperature thermoelectric properties of self-assembling ZnO nanowire networks before and after encapsulation in nonconductive polymers are studied. ZnO nanowire networks were synthesized via a two-step fabrication technique involving the deposition of metallic Zn networks by thermal evaporation, followed by thermal oxidation. Synthesized ZnO nanowire networks were encapsulated in polyvinyl alcohol (PVA) or commercially available epoxy adhesive. Comparison of electrical resistance and Seebeck coefficient of the ZnO nanowire networks before and after encapsulation showed a significant increase in the network's electrical conductivity accompanied by the increase of its Seebeck coefficient after the encapsulation. The thermoelectric power factor (PF) of the encapsulated ZnO nanowire networks exceeded the PF of bare ZnO networks by ~ 5 and ~ 185 times for PVA- and epoxy-encapsulated samples, respectively, reaching 0.85 µW m-1 K-2 and ZT ~ 3·10-6 at room temperature, which significantly exceeded the PF and ZT values for state-of-the-art non-conductive polymers based thermoelectric flexible films. Mechanisms underlying the improvement of the thermoelectrical properties of ZnO nanowire networks due to their encapsulation are discussed. In addition, encapsulated ZnO nanowire networks showed excellent stability during 100 repetitive bending cycles down to a 5 mm radius, which makes them perspective for the application in flexible thermoelectrics.

Tungsten-SiO2-Based Planar Field Emission Microtriodes with Different Electrode Topologies.

This study examines the electrical properties and layer quality of field emission microtriodes that have planar electrode geometry and are based on tungsten (W) and silicon dioxide (SiO2). Two types of microtriodes were analyzed: one with a multi-tip cathode fabricated using photolithography (PL) and the other with a single-tip cathode fabricated using a focused ion beam (FIB). Atomic force microscopy (AFM) analysis revealed surface roughness of the W layer in the order of several nanometers (Ra = 3.8 ± 0.5 nm). The work function values of the Si substrate, SiO2 layer, and W layer were estimated using low-energy ultraviolet photoelectron emission (PE) spectroscopy and were 4.71 eV, 4.85 eV, and 4.67 eV, respectively. The homogeneity of the W layer and the absence of oxygen and silicon impurities were confirmed via X-ray photoelectron spectroscopy (XPS). The PL microtriode and the FIB microtriode exhibited turn-on voltages of 110 V and 50 V, respectively, both demonstrating a field emission current of 0.4 nA. The FIB microtriode showed significantly improved field emission efficiency compared to the PL microtriode, attributed to a higher local electric field near the cathode.

Critical Evaluation of the Methods for the Characterization of the Degree of Sulfonation for Electron Beam Irradiated and Non-Irradiated Sulfonated Poly(ether ether ketone) Membranes.

Sulfonated poly(ether ether ketone) (SPEEK) materials are promising candidates for replacing Nafion™ in applications such as proton exchange membrane (PEM) and direct methanol fuel cells. SPEEK membranes have several advantages such as low cost, thermal and radiation stability and controllable physicochemical and mechanical properties, which depend on the degree of sulfonation (DS). Commercial PEEK was homogenously sulfonated up to a DS of 60-90% and the membranes were prepared using a solvent casting method. Part of the samples were irradiated with a 10 MeV electron beam up to a 500 kGy dose to assess the ionizing radiation-induced effects. Both non-irradiated and irradiated membranes were characterized by Fourier Transformation infrared (FT-IR) spectroscopy, thermogravimetric analysis (TGA), proton nuclear magnetic resonance (1H-NMR) spectroscopy, electrochemical impedance analysis and, for the first time for non-irradiated membranes, by spectrophotometric analysis with Cr(III). The above-mentioned methods for application for DS assessment were compared. The aim of this study is to compare different methods used for the determination of the DS of SPEEK membranes before and after high-dose irradiation. It was observed that irradiated membranes presented a higher value of DS. The appearance of different new signals in 1H-NMR and FT-IR spectra of irradiated membranes indicated that the effects of radiation induced changes in the structure of SPEEK materials. The good correlation of Cr(III) absorption and SPEEK DS up to 80% indicates that the spectrophotometric method is a comparable tool for the characterization of SPEEK membranes.

Estimation of Thermal Stability of Si-SiO2-W Nanolayered Structures with Infrared Spectrometry.

Nanolayered coatings are proposed for use in microelectronic devices where the size/performance ratio is becoming increasingly important, with the aim to achieve existing quality requirements while reducing the size of the devices and improving their ability to perform stably over multiple cycles. Si-SiO2-W structures have been proposed as a potential material for the fabrication of microelectronic devices. However, before such materials can be implemented in devices, their properties need to be carefully studied. In this study, Si-SiO2-W nanolayered structures were fabricated and subjected to numerous thermal treatment cycles at 150 °C. A total of 33 heating cycles were applied, resulting in a cumulative exposure of 264 h. The changes in chemical bonds and microstructure were monitored using Fourier Transform Infrared spectrometry (FTIR) and scanning electron microscopy (SEM). The FTIR signal at 960 cm-1, indicating the presence of W deposited on SiO2, was selected to characterize the thermal stability during the heating cycles. The estimated signal intensity variation closely resembled the normal inhomogeneity of the nanolayers. The increase in slope intensity was estimated to be 1.7 × 10-5.